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arXiv 1102.0070cond-mat.str-elcond-mat.mes-hall
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$q/3$分数量子霍尔态何时稳定?

When are the $q/3$ fractional quantum Hall states stable?

Yang Liu, Javad Shabani, Mansour Shayegan

摘要:

在宽GaAs量子阱中,我们可以调整费米能级($E_F$)位于两个占据的电子子带的不同朗道能级的磁输运测量揭示了在$ν$ = 10/3,11/3,13/3,14/3,16/3和17/3的分数量子霍尔态的出现和消失的显着模式。数据提供了直接的证据,$q/3$状态是稳定和强大的,即使在这样高的填充,只要$E_F$位于基态(N=0)朗道水平的两个电子子带,无论该水平属于对称或反对称的子带。显然,反对称子带的面外方向上的节点不会使$q/3$分数态不稳定。另一方面,当$E_F$位于任一子带的激发($N>0$)朗道能级时,面内方向上的波函数节点削弱或完全使$q/3$分数量子霍尔态不稳定。我们的数据还表明,$q/3$态保持稳定非常接近的两个朗道能级属于两个子带的交叉点,特别是如果水平有平行的自旋。

英文摘要:

Magneto-transport measurements in a wide GaAs quantum well in which we can tune the Fermi energy ($E_F$) to lie in different Landau levels of the two occupied electric subbands reveal a remarkable pattern for the appearance and disappearance of fractional quantum Hall states at $ν$ = 10/3, 11/3, 13/3, 14/3, 16/3, and 17/3. The data provide direct evidence that the $q/3$ states are stable and strong even at such high fillings as long as $E_F$ lies in a ground-state (N=0) Landau level of either of the two electric subbands, regardless of whether that level belongs to the symmetric or the anti-symmetric subband. Evidently, the node in the out-of-plane direction of the anti-symmetric subband does not destabilize the $q/3$ fractional states. On the other hand, when $E_F$ lies in an excited ($N>0$) Landau level of either subband, the wavefunction node(s) in the in-plane direction weaken or completely destabilize the $q/3$ fractional quantum Hall states. Our data also show that the $q/3$ states remain stable very near the crossing of two Landau levels belonging to the two subbands, especially if the levels have parallel spins.

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