We present a comprehensive study of the energetics and magnetic properties of ZnO clusters doped with 3d transition metals (TM) using ab initio density functional calculations in the framework of generalized gradient approximation + Hubbard U (GGA+U) method. Our results within GGA+U for all 3d dopants except Ti indicate that antiferromagnetic interaction dominates in a neutral, defect-free cluster. Formation energies are calculated to identify the stable defects in the ZnO cluster. We have analyzed in details the role of these defects to stabilize ferromagnetism when the cluster is doped with Mn, Fe, and Co. Our calculations reveal that in the presence of charged defects the transition metal atoms residing at the surface of the cluster may have an unusual oxidation state, that plays an important role to render the cluster ferromagnetic. Defect induced magnetism in ZnO clusters without any TM dopants is also analyzed. These results on ZnO clusters may have significant contributions in the nanoengineering of defects to achieve desired ferromagnetic properties for spintronic applications.
Using the first-principles density-functional theory plan-wave pseudopotential method, we investigate the structure and magnetism in 25% Mn substitutive and interstitial doped monoclinic, tetragonal and cubic ZrO2 systematically. Our studies show that the introduction of Mn impurities into ZrO2 not only stabilizes the high temperature phase, but also endows ZrO2 with magnetism. Based on the simple crystal field theory (CFT), we discuss the origination of magnetism in Mn doped ZrO2. Moreover, we discuss the effect of electron donor on magnetic semiconductors, and the possibility as electronic s…
We address the possibility of non-magnetic doping induced magnetism, in Li doped SnO2 nano-particles. The compounds have been prepared by solid state route at equilibrium and were found to be crystallized in single rutile phase. The magnetization measurements have shown that Li-doping induces magnetism in SnO2 for a particular range of Li concentration. However, for other Li concentrations, including pure SnO2, the samples exhibit diamagnetism. To investigate the possible origin of the induced magnetism, we have studied the variation of the magnetization as a function of the average nano-parti…
Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting beta-FeSi2 and CrSi2 at relatively low doping levels particularly for n-type. In this case, there is a rapid cross-over to a half-metallic state as a function …
The magnetism in 12.5% and 25% Mn delta-doped cubic GaN has been investigated using the density-functional theory calculations. The results show that the single-layer delta-doping and half-delta-doping structures show robust ground state half-metallic ferromagnetism (HMF), and the double-layer delta-doping structure shows robust ground state antiferromagnetism (AFM) with large spin-flip energy of 479.0 meV per Mn-Mn pair. The delta-doping structures show enhanced two-dimensional magnetism. We discuss the origin of the HMF using a simple crystal field model. Finally, we discuss the antiferromag…
The effects of $n$-type carrier doping by Li intercalation on magnetism in undoped and Co-doped anatase TiO$_2$ are investigated. We have found that doped $n$-type carriers in TiO$_2$ are localized mainly at Ti sites near the intercalated Li. With increasing the intercalation, local spins are realized at Ti. In the case of Co-doped TiO$_2$, most of the added $n$-type carriers fill the Co 3$d$ bands and the rest are localized at Ti. Therefore, Co magnetic moment vanishes by Li intercalation to have a nonmagnetic ground state.
We report here our study on SiC doped with transition metals using first principle density functional theory calculations. We have considered cubic SiC with 3d transition metals as substitutional impurities for Si and C site separately. Cubic SiC doped with Cr, Mn, show ferromagnetism whereas with Sc, Ti, V and Co show site dependency of magnetic properties. Rests of the impurities are found to be non-magnetic.
We study from first principles the magnetism in graphene induced by single carbon atom defects. For two types of defects considered in our study, the hydrogen chemisorption defect and the vacancy defect, the itinerant magnetism due to the defect-induced extended states has been observed. Calculated magnetic moments are equal to 1 $μ_B$ per hydrogen chemisorption defect and 1.12$-$1.53 $μ_B$ per vacancy defect depending on the defect concentration. The coupling between the magnetic moments is either ferromagnetic or antiferromagnetic, depending on whether the defects correspond to the same or t…
Electron spin resonance spectra of copper phthalocyanine doped with alkaline metals (AxCuPc) have been investigated. The temperature dependence of ESR spectra indicates the ferromagnetic behavior. The Curie-Weiss temperature varies from 30K to 115K depending on the stoichiometry x of samples. Some particles of polycrystalline samples were attracted to a weak magnet at temperature slightly higher than 77K. The observed magnetism is caused by unpaired pi-electrons of phthalocyanine anions on the Eg doubly degenerated molecular orbital. The observed ferromagnetism can be understood within the fra…
One of the keys to the realization of Quantum Anomalous Hall effect (QAHE) is long range ferromagnetism, which is only experimentally realized in Cr or V doped (Bi,Sb)2Te3 system. Both elements are 3d transition metals and 4d transition metals are found to be ineffective to produce long range ferromagnetism in Bi2Se3. Still, whether long range ferromagnetism can be realized by magnetic doping of 4d elements is an open question. Based on density functional theory calculations, we predict that long range ferromagnetism can be realized in Mo doped Bi2Te3 and Sb2Te3, which are semiconducting. The …
We investigate the possible magnetism on the Si(111)-$\sqrt 3 \times \sqrt 3$ surface, which is stabilized for highly boron-doped samples, by using first-principles calculations. When the silicon adatom on top of a boron atom is removed to form a defect structure, three silicon dangling bonds are exposed generating half-filled doubly degenerate energy levels in the band gap which stabilizes a local magnetic moment of 2 $μ_{\rm B}$. When there are many such defect structures adjacent one another, they are found to align antiferromagnetically. However, we demonstrate that the ferromagnetism can …
It is shown that substitution of C or N for O recently proposed as a way to create ferromagnetism in otherwise nonmagnetic oxide insulators is curtailed by formation of impurity pairs, and the resultant C2 spin=1 dimers as well as the isoelectronic N2^{2+} interact antiferromagneticallly in p-type MgO. For C-doped ZnO, however, we demonstrate using the HSE hybrid functional that a resonance of the spin-polarized C2 ppπ* states with the host conduction band results in a long-range ferromagnetic interaction. Magnetism of open-shell impurity molecules is proposed as a possible route to d0-ferroma…
The strain-induced magnetism is observed in single-layer MoS2 with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2muB per vacancy defect. The straininduced band gap closure is concurrent with the occurrence of the magnetism. Possible physical mechanism of the emergence of strain-induced magnetism is illustrated. We also demonstrate the possibility to test the predicted magnetism in experiment. Our study may provide an opportunity for the design of new type of memory-switching or logic devices by using earth-rich nonmagnetic materials M…
The realization of long range and insulating ferromagnetic states in topological insulator (TI) has been a pressing issue since its discovery. Only recently, such state was achieved in Cr-doped Bi2-xSbxTe3, leading to the discovery of quantum anomalous Hall effect (QAHE). However, the effect is only observed at extremely low temperatures mainly due to the limited magnetism. To fully understand the mechanism of the ferromagnetic ordering whereby improving the ferromagnetism, we investigated 4f transition metal-doped Bi2Se3, using density-functional-theory approaches. We found that Eu and Sm pre…
We have investigated the magnetic properties of Mn and Cu substituted SrZnO2 single crystals (SrZn0.99Mn0.01O2 and SrZn0.99Cu0.01O2). We observed signatures of weak ferromagnetism as a sharp increase of magnetic susceptibility below 5 K even in the low percentage (x= 0.01) of Mn substituted single crystals. Magnetic susceptibility data measured parallel or perpendicular to the ab plane yield anisotropic behavior with Curie Weiss temperature of about -320 K and -410 K, respectively, suggesting the presence of strong antiferromagnetic couplings among Mn atoms at high temperatures, similar to the…
The discovery of conducting two-dimensional electron gas (2DEG) and magnetism at the interface between insulating nonmagnetic oxides, as exemplified by the polar LaAlO3 and nonpolar SrTiO3 has raised prospects for attaining interfacial functionalities absent in the component materials. Yet, the microscopic origin of such emergent phenomena remains unclear, posing obstacles to design of improved functionalities. Using first principles defect calculations, we reveal a unifying polarity-induced defect mechanism for both conductivity and magnetism at polar-nonpolar interfaces of nonmagnetic insula…
Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding a thin Mn-film as a δ-doped layer in group-IV matrix. The Mn-layer consists of a dense layer of monoatomic Mn-wires, which are oriented perpendicular to the Si(001)-(2x1) dimer rows, or Mn-clusters. The nanostructures are covered with an amorphous Si or Ge capping layer, which conserves the identity of the δ-doped layer. The analysis of the bonding environment with STM is combined with the element-specific detection of the magnetic signature with X-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured f…
Defect-induced magnetism in graphene has been predicted theoretically and observed experimentally. However, there are open questions about the origin of the magnetic behavior when substitutional impurities with $sp$ electrons are considered. The aim of this work is to contribute to the understanding of impurity-induced spin magnetism in doped graphene systems. Thus, the electronic structure and spin magnetic moments for substitutional doped graphene with impurities from groups IIIA (B, Al, and Ga) and VA (N, P, As, Sb, and Bi) of the periodic table were obtained within the framework of density…
Some doped semiconductors have recently been shown to display superconductivity or weak ferromagnetism. Here we investigate the electronic structure and conditions for magnetism in a supercells of cubic XW_{26}O_{81}, where X=Nb,V and Re. The undoped material is an insulator, and although the slightly doped material is a metal, it is far from the Stoner criterion of magnetism. The conditions of a localized density-of-states which varies rapidly with the energy, resemble those of doped hexaborides. The virtual crystal approximation is used to vary the doping level. A small moment appears if the…
Platinum diselenide (PtSe$_{2}$) is a recently-discovered extrinsic magnet, with its magnetism attributed to the presence of Pt-vacancies. The host material to these defects itself displays interesting structural and electronic properties, some of which stem from an unusually strong interaction between its layers. To date, it is not clear how the unique intrinsic properties of PtSe$_2$ will affect its induced magnetism. In this theoretical work, we show that the defect-induced magnetism in PtSe$_{2}$ thin films is highly sensitive to: (i) the layer-thickness (ii) defect density, and (iii) subs…
The magnetism of C-doped SnO$_{2}$ (001) surfaces is studied using first-principles calculations. It is found that carbon does not induce magnetism in bulk SnO$_{2}$ when located at the oxygen site, but shows a large magnetic moment at the SnO$_{2}$ (001) surface. The magnetic moment is mainly contributed by the carbon atoms due to empty minority spins of $p$ orbitals and is localized at the surface and subsurface atoms. No magnetism is observed when the carbon atom is located at the subsurface oxygen sites. The origin of magnetism is discussed in the context of surface bonding.
A detailed investigation of mesoscopic magnetic and crystallographic phase separation in Ca(1-x)La(x)MnO3, 0.00<=x<=0.20, is reported. Neutron powder diffraction and DC-magnetization techniques have been used to isolate the different roles played by electrons doped into the eg level as a function of their concentration x. The presence of multiple low-temperature magnetic and crystallographic phases within individual polycrystalline samples is argued to be an intrinsic feature of the system that follows from the shifting balance between competing FM and AFM interactions as a function of tempera…
We have studied in details the electronic structure and magnetism in M (Mn and Cr) doped semiconducting half-Heusler compounds FeVSb, CoTiSb and NiTiSn (XM$_{x}$Y$_{1-x}$Z) in a wide concentration range using local-spin density functional method in the framework of tight-binding linearized muffin tin orbital method(TB-LMTO) and supercell approach. Our calculations indicate that some of these compounds are not only ferromagnetic but also half-metallic and may be useful for spintronics applications. The electronic structure of the doped systems is analyzed with the aid of a simple model where we…
The T-dependence of magnetic moments in SrB_6 is studied through spin-polarized band calculations for a supercell of Sr_{27}B_{156} containing a B_6 vacancy. The magnetic moment decays rather quickly with T despite the fact that only electronic Fermi-Dirac effects are included. This result and the T-dependence of moments near a La impurity can hardly explain the reports of a very high Curie temperature in hexaborides, but suggest that the magnetism is caused by some other type of impurity.
The realization of multiferroicity in 2D nanomaterials is crucially important for designing advanced nanoelectronic devices such as non-volatile multistate data storage. In this work, the coexistence of ferromagnetism and ferroelectricity is reported in monolayer SnTe system by transition metal (TM) doping. Based on first-principles calculations, the spontaneous spin polarization could be realized by TM doping in ferroelectric SnTe monolayer. In addition to in-plane ferroelectric polarization, the out-of-plane ferroelectric polarization emerges in Mn (Fe)-doped SnTe monolayer due to the intern…
The double perovskite La2NiMnO6 (LNMO) exhibits complex magnetism due to the competition of magnetic interactions that are strongly affected by structural and magnetic inhomogeneities. In this work, we study the effect of oxygen annealing on the structure and magnetism of epitaxial thin films grown by pulsed laser deposition. The key observations are that a longer annealing time leads to a reduction of saturation magnetization and an enhancement in the ferromagnetic transition temperature. We explain these results based upon epitaxial strain and oxygen defect engineering. The oxygen enrichment…
Mn doped semiconductors are extremely interesting systems due to their novel magnetic properties suitable for the spintronics applications. It has been shown recently by both theory and experiment that Mn doped GaN systems have a very high Curie temperature compared to that of Mn doped GaAs systems. To understand the electronic and magnetic properties, we have studied Mn doped GaN system in detail by a first principles plane wave method. We show here the effect of varying Mn concentration on the electronic and magnetic properties. For dilute Mn concentration, $d$ states of Mn form an impurity …
ThCr2Si2-type phosphide ACo2P2 (A=Rare earth elements) has the same structure as iron arsenides, but their magnetic behaviors are quite distinct. In this paper, we for the first time grew a series of La1-xCexCo2P2 single crystals (x=0.0 to1.0), and made structural and magnetic characterizations. This allows us to carry out a careful investigation on the evolution of magnetism with cerium content and build a magnetic phase diagram. We found that the introduction of cerium induces a rapid decrease of c-axis and a change from ferromagnetic (FM) to antiferromagnetic (AFM) states. By employing firs…
The problem of localization of the resonant impurity states is discussed for an illustrative example of Titanium doped Lead Telluride. Electronic structure of PbTe:Ti is studied using first principles methods, densities of states and Bloch spectral functions are analyzed. We show that Ti creates resonant states in the conduction band of PbTe, however, spectral functions of the system strongly suggest localization of these states and show poor hybridization with PbTe electronic structure. The contrast between results presented here and previously reported spectral functions for PbTe:Tl correlat…
This work presents results for the magnetic properties of the compound GeTe doped with 3d transition metals V, Cr and Mn from the viewpoint of potential application in spintronics. We report a systematic density-functional study of the electronic structure, magnetic and cohesive properties of these ternary compounds in both rock salt and zinc blende structures. In both cases, it is the Ge sublattice that is doped with the three transition metals. Some of these compounds are found to be half-metallic at their optimized cell volumes. For these particular cases, we calculate both exchange interac…
We have investigated the variation in the magnetization of highly ordered pyrolytic graphite (HOPG) after neutron irradiation, which introduces defects in the bulk sample and consequently gives rise to a large magnetic signal. We observe strong paramagnetism in HOPG, increasing with the neutron fluence. We correlate the induced paramagnetism with structural defects by comparison with density-functional theory calculations. In addition to the in-plane vacancies, the trans-planar defects also contribute to the magnetization. The lack of any magnetic order between the local moments is possibly du…
The prediction of ferromagnetism at room temperature in Co-ZnO thin films has generated a large interest in the community due to the possible applications. However, the results are controversial, going from ferromagnetism to non-ferromagnetism, leading to a large debate about its origin (secondary phase, Co clusters or not). By carefully studying the micro-structure of various Co-ZnO films, we show that the Co2+ partly substitutes the ZnO wurtzite matrix without forming Co clusters. Surprisingly, the ferromagnetism nature of the films disappears as the Co content increases. In addition, our re…
We investigate the spin transport and ferromagnetic resonance properties of giant magnetoresistive (GMR) Co/Cu-Ni multilayers with variable levels of Ni doping in the Cu spacer. We present an experimental evidence for a magnetic-to-diamagnetic transition in the atomic magnetic moment of Ni in the Cu matrix for concentrations below 15 at. % Ni. As its concentration is increased, Ni atoms turn into spin scattering centers, which is manifested experimentally as a step-like change in the GMR of the multilayers. This behavior is observed in multilayers with gradient-doped Cu spacers, where only the…
Density functional theory calculations indicate that the incorporation of V into Ti lattice positions of rutile TiO2 leads to magnetic V4+ species, but the extension and sign of the coupling between dopant moments confirm that ferromagnetic order cannot be reached via low-concentration doping in the non-defective oxide. Oxygen vacancies can introduce additional magnetic centres, and we show here that one of the effects of vanadium doping is to reduce the formation energies of these defects. In the presence of both V dopants and O vacancies all the spins tend to align with the same orientation.…
Nominally pure nanocrystalline KTaO3 was thoroughly investigated by micro-Raman and magnetic resonance spectroscopic techniques. In all samples the defect driven ferroelectricity and magnetism are registered. Both ordering states are suggested to appear due to the iron atoms and oxygen vacancies. The concentration of defects was estimated to be 0.04 and 0.06-0.1 mole %, respectively. Note that undoped single crystals of KTaO3 are nonmagnetic and have never exhibited ferromagnetic properties. The results enable us to refer a nanosized KTa(Fe)O3 to the class of multiferroics and assume that it c…
\textit{Ab-initio} calculations based on density functional theory with local spin density approximation are used to study defects-driven magnetism in bulk $α$-Li$ _{3}$N. Our calculations show that bulk Li$ _{3} $N is a non-magnetic semiconductor. Two types of Li vacancies (Li-I and Li-II) are considered, and Li-vacancies (either Li-I or Li-II type) can induce magnetism in Li$ _{3}$N with a total magnetic moment of 1.0 $μ_{\rm B}$ which arises mainly due to partially occupied N-$p$-orbitals around the Li vacancies. The defect formation energies dictate that Li-II vacancy, which is in the Li$ …
The effects of biaxial strain on the impurity-induced magnetism in P-doped graphene (P-graphene) and N-doped silicene (N-silicene) are studied by means of spin-polarized density functional calculations, using the supercell approach. The calculations were performed for three different supercell sizes $4\times 4$, $5\times 5$, and $6\times 6$, in order to simulate three different dopant concentrations 3.1, 2.0 and 1.4 %, respectively. For both systems, the calculated magnetic moment is 1.0 $μ_B$ per impurity atom for the three studied concentrations. From the analysis of the electronic structure…
Exchange Frustration and Topological Magnetism in Electrostatically Doped SrRuO3
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln（内布拉斯加大学林肯分校物理与天文学系及内布拉斯加材料与纳米科学中心）
Magnetic field dependent polarization selective photoluminescence(PL) study has been carried out at 1.5~K on Gd-doped GaN epitaxial layers grown on c-SiC substrates by molecular beam epitaxy technique. It has been found that the incorporation of Gd in GaN leads to the generation of three types of donor like defects that result in neutral donor bound excitonic features in low temperature PL. The study reveals that the rate of spin-flip scattering for all the three excitonic features becomes almost $B$-independent suggesting that these signals must be stemming from defects which are ferromagneti…
We find that Ag-interstitial ($Ag_I$) acts as an electron donor and plays an important role in Ag-excess doped polycrystalline PbTe thermoelectric materials. When Ag is heavily doped in PbTe, the neutral (Ag-Ag) dimer defect is formed at the Pb-site and the environment becomes Pb-rich/Te-poor condition. Then the positively ionized Ag interstitial ($Ag_I^+$) defect becomes the major defect under Pb-rich condition. Due to the small formation energy and small diffusion barrier of $Ag_I^+$, Ag can be easily dissolved into the PbTe matrix. The temperature behavior of the Ag defect formation energy …
Calcium fluoride has been widely used for light up-/down-conversion luminescence by accommodating lanthanide ions as sensitizers or activators. Especially, Yb-doped \ce{CaF2} exhibits unique defect physics, causing various effects on the luminescence. This makes it vital for high efficiency of devices to control the defect-clustering, but theoretically principal guidelines for this are rarely provided. Here we perform the first-principles study on defect physics in Yb-doped \ce{CaF2} to reveal the thermodynamic transition levels and formation energies of possible defects. We suggest that the f…
Two-dimensional (2D) materials with robust magnetism have drawn immense attention for their promising applications in spintronics. Recently, intrinsic ferromagnetic vanadium triiodide (VI3) has been synthesized experimentally. To enhance its spintronic property, we modified VI3 by interstitial doping with 3d transition metals (TM) and used first-principles calculations to investigate the geometric structure, formation energy, electronic property, and magnetism of pristine VI3 and 3d TM-doped VI3 monolayer. Among eight transition metal (Sc-, Ti-, V-, Cr-, Mn-, Fe-, Co-, and Ni-) doped VI3 mater…
Nanocrystalline films of La-doped CaB$_6$ have been fabricated by using a rf-magnetron sputtering. Lattice expansion of up to 6% with respect to the bulk value was observed along the direction perpendicular to the film plane, which arises from the trapping of Ar gas into the film. Large ferromagnetic moment of 3 ~ 4 Bohr magneton per La has been observed in some La-doped films only when the lattice expansion rate is larger than 2.5%.
We give evidence for intrinsic, defect-induced bulk paramagnetism in SiC by means of $^{13}$C and $^{29}$Si nuclear magnetic resonance (NMR) spectroscopy. The temperature dependence of the internal dipole-field distribution, probed by the spin part of the NMR Knight shift and the spectral linewidth, follows a Curie law and scales very well with the macroscopic DC susceptibility. In order to quantitatively analyze the NMR spectra, a microscopic model based on dipole-dipole interactions was developed. The very good agreement between these simulations and the NMR data establishes a direct relatio…
Here we propose to induce magnetism in semiconductor utilizing the unique properties of the interstitial defect to act as the magnetic impurity within the alpha-PbO crystal structure. The Pbi interstitial generates the p-localized state with two on-site electrons to obey the Hund's rule for their ordering. It is demonstrated that instead of Pb interstitial other non-magnetic impurities of s^2p^{x} outer shell configuration can be applied to induce d0 magnetism with possibility to tune the local magnetic moments mu_B by varying a number of electrons 1< x< 3. The magnetic coupling between such d…
We report the results of 151Eu Moessbauer effect and magnetization measurements in the Eu-doped Ca3Co2O6 and Ca3CoRhO6, which are of great current interest in the fields of spin-chain magnetism and geometrical frustration. We find that there is a pronounced increase in the line-width of the Moessbauer spectra below a certain characteristic temperature which is well-above the one at which three-diensional ordering features set in. This unusual broadening of the spectra indicates the existence of a characteristic temperature in these 'exotic' magnetic systems, attributable to the onset of incipi…
Defect-induced ferromagnetism has triggered a lot of investigations and controversies. The major issue is that the induced ferromagnetic signal is so weak that it can sufficiently be accounted for by trace contamination. To resolve this issue, we studied the variation of the magnetic properties of SiC after neutron irradiation with fluence covering four orders of magnitude. A large paramagnetic component has been induced and scales up with defect concentration, which can be well accounted for by uncoupled divacancies. However, the ferromagnetic contribution is still weak and only appears in th…
The quantum critical point (QCP) in the archetypical heavy-fermion compound CeCu$_6$ doped by Au is described, accounting for the localized $4f$-electron of Ce, using realistic electronic structure calculations combined with dynamical mean-field theory (DMFT). Magnetism trends in Ce(Cu$_{1-ε}$Au$_ε$)$_6$ are compared with those in Co-doped CeCu$_{5}$, which resides on the non-ferromagnetic side of the composition space of one of the earliest rare-earth permanent magnet compounds, Ce(Co,Cu)$_5$. The construction of a realistic Doniach phase diagram shows that the system crosses over a magnetic …
Combining LSDA+$U$ and an analysis of superexchange interactions beyond DFT, we describe the magnetic ground states in rutile and anatase Cr-doped TiO$_2$. In parallel, we correct our LSDA+$U$ ground state through GW corrections ($GW$@LSDA+$U$) that reproduce the position of impurity states and the band gaps in satisfying agreement with experiments. Because of the different topological coordinations of Cr-Cr bonds in the ground states of rutile and anatase, superexchange interactions induce either ferromagnetic or antiferromagnetic couplings of Cr ions. In Cr-doped anatase, this interaction le…
High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V_N). Calculated results are in agreement with experimental observations and facts of real Cr-do…
Isolated hydrogen and hydrogen pairs in bulk diamond matrix have been studied using density functional theory calculations. The electronic structure and stability of isolated and paired hydrogen defects are investigated at different possible lattice sites in pure diamond and boron doped diamond. Calculations revealed that isolated hydrogen defect is stable at bond center sites for pure diamond and bond center puckered site for boron doped diamond. In case of hydrogen pairs, H2 defect (one hydrogen at bond center and second at anti-bonding site) is stable for pure diamond, while for boron doped…
We performed ab initio calculation on the pristine and carbon-doped (5,5) and (9,0) BN nanotubes. It was found that Carbon substitution for either boron or nitrogen in BN nanotubes can induce spontaneous magnetization. Calculations based on density functional theory with the local-spin-density-approximation on the electronic band structure revealed a spin polarized, dispersionless band near the Fermi energy. The magnetization can be attributed to the carbon 2p electron. Compared to other theoretical models of light-element or metal-free magnetic materials, the Carbon-doped BN nanotubes are mor…
Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular di…
The self-interaction corrected density-functional calculations are performed for Re impurities and their pairs in silicon. Rhenium ions form in the host crystal not very tight pairs, with impurities separated by one Si atom or by a distance close to two silicon bonds. Comparison of formation energies for various pairs of substitutionals, interstitials, and mixed-site impurities favours the last type. Electron transfer from the interstitial into the substitutional impurity makes the both Re sites nonmagnetic, but the p-type and the n-type co-doping revives magnetism again, the latter more effic…
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semiconductors. Here we report a systematic study of (GaZn-VZn)- acceptor complex defect via zinc self-diffusion in Ga-doped ZnO isotopic heterostructures, which were conceived and prepared with delicately controlled growth conditions. The secondary ion mass spectrometry and temperature-dependent Hall-effect measurements reveal that a high density of controllable (GaZn-VZn)- is the predominant compensating defect in Ga-d…
Recently the point defect responsible for the intra-3$d$ luminescence of cobalt in doped ZnO samples has been indentified\,\cite{pssb2019}. In this work we further extend our investigation to other point defects in Co-doped ZnO. We use density-functional theory and GW calculations to determined the orbital-resolved band structure of cobalt doped zinc oxide (ZnO). We show that mainly O-p and Co-d orbitals take part in the process and confirm that an oxygen interstitial nearby a cobalt atom is a likely defect to occur in Co-implanted ZnO samples. We also rule out that other common point defects …
We performed first-principles calculations to investigate the possible magnetism induced by the different concentrations of non-magnetic impurities and vacancies in BN sheet. The atoms of Be, B, C, N, O, Al and Si are used to replace either B or N in the systems as impurities. We discussed the changes in density of states as well as the extent of the spatial distributions of the defect states, the possible formation of magnetic moments, the magnitude of the magnetization energies and finally the exchange energies due to the presence of these defects. It is shown that the magnetization energies…
