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arXiv 1008.4148cond-mat.mtrl-sci
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光电子能谱研究SnTe的能带结构

Band structure of SnTe studied by Photoemission Spectroscopy

P. B. Littlewood, B. Mihaila, R. K. Schulze, D. J. Safarik, J. E. Gubernatis, A. Bostwick, E. Rotenberg, C. P. Opeil, T. Durakiewicz, J. L. Smith, J. C. Lashley

摘要:

我们提出了一个角度分辨光电子能谱研究的SnTe的电子结构,并比较实验结果从头计算能带结构计算以及一个简化的紧束缚模型的p-带。我们的研究揭示了在L点附近的束缚复杂费米表面结构,显示了随着结合能的增加,从断开的口袋到开放的管道,然后到长方体的带的拓扑变化,解决了关于电子结构的挥之不去的问题。发现晶体表面的化学势比能隙低0.5eV,对应于载流子密度p = 1.14 × 10 ^{21} cm^{-3}或每个晶胞7.2 × 10 ^{-2}个空穴。在低于的温度下的菱面体结构转变的价带的光谱能量的一个小的位移被发现,与模型预测。

英文摘要:

We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe, and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p-bands. Our study reveals the conjectured complex Fermi surface structure near the L-points showing topological changes in the bands from disconnected pockets, to open tubes, and then to cuboids as the binding energy increases, resolving lingering issues about the electronic structure. The chemical potential at the crystal surface is found to be 0.5eV below the gap, corresponding to a carrier density of p =1.14x10^{21} cm^{-3} or 7.2x10^{-2} holes per unit cell. At a temperature below the cubic-rhombohedral structural transition a small shift in spectral energy of the valance band is found, in agreement with model predictions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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