Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.
The longitudinal and Hall resistances have recently been measured for quantum Hall bilayers at total filling $ν=1$ in the superfluid state with interlayer pairing, both for currents flowing parallel to one another and for "counterflowing" currents in the two layers. Here I examine the contribution to these resistances from the motion of unpaired vortices in these systems, developing some possible explanations of various qualitative features of these data.
The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic field reversal in the microwave-induced Hall resistance $ΔR_{xy}$ whereas the dissipative resistance $ΔR_{xx}$ obeys even symmetry. Studies of $ΔR_{xy}$ as a function of the microwave electric field and polarization exhibit a strong and non-trivial power and polarization dependence. The obtained results are discussed in connection to existing theoretical models of microwave-induced photoconduct…
We observe zero-differential resistance states at low temperatures and moderate direct currents in a bilayer electron system formed by a wide quantum well. Several regions of vanishing resistance evolve from the inverted peaks of magneto-intersubband oscillations as the current increases. The experiment, supported by a theoretical analysis, suggests that the origin of this phenomenon is based on instability of homogeneous current flow under conditions of negative differential resistivity which leads to formation of current domains in our sample, similar to the case of single-layer systems.
Using the Büttiker-Landauer formulation of transport theory in the linear response regime, the valley currents and non-local resistances of bilayer graphene nanostructures with broken inversion symmetry are calculated. It is shown that broken inversion symmetry in bilayer graphene nanostructures leads to striking enhancement of the non-local 4-terminal resistance and to valley currents several times stronger than the conventional electric current when the Fermi energy is in the spectral gap close to the energy of Dirac point. The scaling relation between local and non-local resistances is inve…
We show that all questions raised in the Comment can be easily answered within the theory formulated in the commented papers. It is also shown that the bulk theory promoted by the commenter fails to explain the most important fundamental features of the discussed phenomenon.
We consider observation of Aharonov-Bohm oscillations in clean systems based on the flow of topologically protected currents in silicene and bilayer graphene. The chiral channels in these materials are defined by the flips of the vertical electric field. The line of the flip confines chiral currents flowing along it in the direction determined by the valley. We present an electric field profile that forms a crossed ring to which four terminals can be attached, and find that the conductance matrix elements oscillate in the perpendicular magnetic field in spite of the absence of backscattering. …
We report on theoretical studies of recently discovered microwave-induced resistance oscillations and zero resistance states in Hall bars with two occupied subbands. In the same results, resistance presents a peculiar shape which appears to have a built-in interference effect not observed before. We apply the microwave-driven electron orbit model, which implies a radiation-driven oscillation of the two-dimensional electron system. Thus, we calculate different intra and inter-subband electron scattering rates and times that are revealing as different microwave-driven oscillations frequencies fo…
Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise from various sources such as ripples [3] or charged impurities [4]. Recent improvements in quality have been achieved by suspending graphene flakes [5,6], yielding samples with very high mobilities and little charge inhomogeneity. Here we report the fabrication of suspended bilayer graphene devices with very little disorder. We observe fully developed quantize…
A microwave technique is employed to simultaneously examine the spin pumping and the spin Seebeck effect processes in a YIG|Pt bilayer system. The experimental results show that for these two processes, the spin current flows in opposite directions. The temporal dynamics of the longitudinal spin Seebeck effect exhibits that the effect depends on the diffusion of bulk thermal-magnons in the thermal gradient in the ferromagnetic-insulator|normal-metal system.
The quantum Hall state at total filling factor $ν_T=1$ in bilayer systems realizes an exciton condensate and exhibits a zero-bias tunneling anomaly, similar to the Josephson effect in the presence of fluctuations. In contrast to conventional Josephson junctions, no Fraunhofer diffraction pattern has been observed, due to disorder induced topological defects, so-called merons. We consider interlayer tunneling in the presence of microwave radiation, and find Shapiro steps in the tunneling current-voltage characteristic despite the presence of merons. Moreover, the Josephson oscillations can also…
We discuss a possible origin of the recently discovered microwave-induced zero-resistance states in very-high-electron-mobility two-dimensional electron systems. We suggest a scenario, in which two mechanisms, bulk and edge, contribute to the measured photosignal. Zero-resistance states are assumed to be due to a drift plasma instability, developing {\em near the edge} of the system under the microwave radiation. The proposed scheme qualitatively agrees with the microwave power, temperature, frequency, magnetic field, and mobility dependencies of the measured photosignal.
Edge channels play a crucial role for electron transport in two dimensional electron gas under magnetic field. It is usually thought that ballistic transport along edges occurs only in the quantum regime with low filling factors. We show that a microwave field can stabilize edge trajectories even in the semiclassical regime leading to a vanishing longitudinal resistance. This mechanism gives a clear physical interpretation for observed zero-resistance states.
We observe the phonon-drag voltage oscillations correlating with the resistance oscillations under microwave irradiation in a two-dimensional electron gas in perpendicular magnetic field. This phenomenon is explained by the influence of dissipative resistivity modified by microwaves on the phonon-drag voltage perpendicular to the phonon flux. When the lowest-order resistance minima evolve into zero-resistance states, the phonon-drag voltage demonstrates sharp features suggesting that current domains associated with these states can exist in the absence of external dc driving.
We report on the observation of microwave-induced resistance oscillations associated with the fractional ratio n/m of the microwave irradiation frequency to the cyclotron frequency for m up to 8 in a two-dimensional electron system with high electron density. The features are quenched at high microwave frequencies independent of the fractional order m. We analyze temperature, power, and frequency dependencies of the magnetoresistance oscillations and discuss them in connection with existing theories.
We confirm the existance of magneto-resistance oscillations in a microwave-irradiated two-dimensional electron gas, first reported in a series of papers by Zhudov et al. and Mani et al. In our experiments, on a sample with a more moderate mobility, the microwave induced oscillations are observed not only in the longitudinal - but also in the transverse-resistance (Hall resistance). The phase of the oscillations is such that the decrease (increase) in the longitudinal resistance is accompanied by an increase (decrease) in the absolute value of the Hall resistance. We believe that these new resu…
A general transport equation for the center of mass motion is constructed to study transports of electronic system under uniform magnetic field and microwave radiation. The equation is applied to study 2D electron system in the limit of weak disorder where negative resistance instability is observed when the radiation field is strong enough. A solution of the transport equation with spontaneous AC current is proposed to explain the experimentally observed Radiation-Induced Zero Resistance State.
We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov- de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.
By numerical simulations and analytical studies, we show that the phenomenon of microwave-induced resistance oscillations can be understood as a classical memory effect caused by re-collisions of electrons with scattering centers after a cyclotron period. We develop a Drude-like approach to magneto-transport in presence of a microwave field, taking account of memory effects, and find an excellent agreement between numerical and analytical results, as well as a qualitative agreement with experiment.
In this work we present a model for the photoconductivity of a two dimensional electron system (2DES) subjected to a magnetic field. The model includes the microwave and Landau contributions in a non-perturbative exact way, Impurity scattering effects are treated perturbatively. Based on this formalism, we provide a Kubo-like formula that takes into account the oscillatory Floquet structure of the problem. We discuss results related with the recently discovered zero-resistance states.
Hall and diagonal resistances of bilayer fractional quantum Hall systems are discussed theoretically. The bilayers have electrodes attached separately to each layer. They are assumed to be coupled weakly by interlayer tunneling, while the interlayer Coulomb interaction is negligibly small. It is shown that source-drain voltage dependence of the resistances reflects the Luttinger liquid parameter of the edge state.
We have studied the bichromatic photoresistance states of a two dimensional electron gas in the regime of microwave induced resistance oscillations. Zudov and coworkers found clear experimental evidence of zero-resistance states by measuring the bichromatic resistance in a bidimensional gas of electrons. They found that the bichromatic resistance closely replicates the superposition of the two monochromatic components provided that both contributions are positive. However, the superposition principle is no longer valid if one of the two contributions give rice to a zero-resistance state. The e…
We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, wi…
We measure microwave photocurrent in devices made from InAs/GaInSb bilayers where both insulating bulk state and conducting edge state were observed in the inverted-band regime, consistent with the theoretical prediction for a quantum spin Hall (QSH) insulator. It has been theoretically proposed that microwave photocurrent could be a unique probe in studying the properties of QSH edge states. To distinguish possible photoresponse between bulk state and helical edge state, we prepare Hall bar and Corbino disk from the same wafer. Results show that the Corbino disk samples have a negligible phot…
In this work we address theoretically a key issue concerning microwave-induced longitudinal resistivity oscillations and zero resistance states, as is tempoerature. In order to explain the strong temperature dependence of the longitudinal resistivity and the thermally activated transport in 2DEG, we have developed a microscopic model based on the damping suffered by the microwave-driven electronic orbit dynamics by interactions with the lattice ions yielding acoustic phonons. Recent experimental results show a reduction in the amplitude of the longitudinal resistivity oscillations and a breakd…
Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.
In this study we used selectively-doped GaAs/AlAs heterostructure to fabricate a high-mobility two-subband electronic system with substantially different concentration of electrons in subbands. We observe microwave photoresistance at high numbers of magneto-intersubband oscillations (MISO). The system under study demonstrates microwave-induced resistance oscillations (MIRO) and MISO interference. MIRO in the studied two-subband system appear in lower magnetic fields comparing to MISO. This is an indication of some unknown mechanism that exists in the two-subband system and is responsible for M…
We explore the potential of bilayer graphene as a cryogenic microwave photodetector by studying the microwave absorption in fully suspended clean bilayer graphene pn junctions in the frequency range of $1-5$ GHz at a temperature of 8 K. We observe a distinct photocurrent signal if the device is gated into the pn regime, while there is almost no signal for unipolar doping in either the nn or pp regimes. Most surprisingly, the photocurrent strongly peaks when one side of the junction is gated to the Dirac point (charge-neutrality point CNP), while the other remains in a highly doped state. This …
Recent experimental results regarding a 2D electron gas subjected to microwave radiation reveal that magnetoresistivity, apart from presenting oscillations and zero resistance states, can evolve to negative values at minima. In other words, the current can evolve from flowing with no dissipation, to flow in the opposite direction of the dc bias applied. Here we present a theoretical model in which the existence of radiation-induced absolute negative conductivity is analyzed. Our model explains the transition from zero resistance states to absolute negative conductivity in terms of multiphoton …
At the low Landau filling factor $(ν)$ termination of the fractional quantum Hall effect (FQHE) series, two-dimensional electron systems (2DESs) exhibit an insulating phase that is understood as a form of pinned Wigner solid. Here we use microwave spectroscopy to probe the transition to the insulator for a wide quantum well (WQW) sample that can support single-layer or bilayer states depending on its overall carrier density, $n$. We find the insulator exhibits a resonance, which is characteristic of a bilayer solid. The resonance also reveals a pair of transitions within the solid, which are n…
We have studied the effect of an in-plane magnetic field on microwave-induced resistance oscillations in a high mobility two-dimensional electron system. We have found that the oscillation amplitude decays exponentially with an in-plane component of the magnetic field $B_\parallel$. While these findings cannot be accounted for by existing theories, our analysis suggests that the decay can be explained by a $B_\parallel$-induced correction to the quantum scattering rate, which is quadratic in $B_\parallel$.
We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: $i$) both sides of the junction have the same carrier type, and $ii$) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band g…
We study the microwave-induced photoconductivity of a two-dimensional electron system (2DES) in the presence of a magnetic field and a two-dimensional modulation. The microwave and Landau contributions are exactly taken into account, while the periodic potential is treated perturbatively. The longitudinal resistivity exhibits oscillations, periodic in $ω/ ω_c$. Negative resistance states (NRS) develop for sufficiently high electron mobility and microwave power. This phenomenon appears in a narrow window region of values of the lattice parameter ($a$), around $a \sim l_B$, where $l_B$ is the ma…
Giant-amplitude oscillations in dc magnetoresistance of a high-mobility two-dimensional electron system can be induced by millimeterwave irradiations, leading to zero-resistance states at the oscillation minima. Following a brief overview of the now well-known phenomenon, this paper reports on aspects of more recent experiments on the subject. These are: new zero-resistance states associated with multi-photon processes; suppression of Shubnikov-de Haas oscillations by high-frequency microwaves; and microwave photoconductivity of a high-mobility two-dimensional hole system.
The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a two channel conductance model including parallel thermal activation and variable range hopping channels, which gives the electric-field-dependent band gap whose magnitude is found to be in good agreement with infrared absorption experiments. Low temperature transport is similar to previous studies of dual-gated bilayer graphene with edges, suggesting that ed…
We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with carrier density. Our analysis shows that the anticipated increase in the effective microwave power and quantum lifetime with density is not sufficient to explain the observed growth of the amplitude. We further observe that the fundamental oscillation extrema move towards cyclotron resonance with increasing density, which also contradicts theoretical predictions. These findings reveal that the density dependence is …
We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunne…
The effect of a microwave field in the frequency range from 54 to 140 $\mathrm{GHz}$ on the magnetotransport in a GaAs quantum well with AlAs/GaAs superlattice barriers and with an electron mobility no higher than $10^6$ $\mathrm{cm^2/Vs}$ is investigated. In the given two-dimensional system under the effect of microwave radiation, giant resistance oscillations are observed with their positions in magnetic field being determined by the ratio of the radiation frequency to the cyclotron frequency. Earlier, such oscillations had only been observed in GaAs/AlGaAs heterostructures with much higher …
High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of …
In this work we present a theoretical model to study the effect of microwave radiation on Weiss oscillations. In our proposal Weiss oscillations, produced by an spatial periodic potential, are modulated by microwave radiation due to an interference effect between both, space and time-dependent, potentials. The final magnetoresistance depends mainly on the spatial period of the spatial potential and the frequency of radiation. Depending on the values of these parameters, we predict that Weiss oscillations can reach zero resistance states. On the other hand, these dissipationless transport state…
We present phenomenological analysis of the period and the phase of oscillatory microwave photoresistance (OMP) and zero-resistance states (ZRS) recently observed in 2D electron systems. The results demonstrate that as OMP evolves into ZRS with increasing magnetic field, the absolute value of the phase becomes progressively smaller, decreasing roughly as 1/B. Virtually eliminating a phase-shift and resulting in different periodicities for the maxima and minima, such specific dependence is supported by a simple model based on oscillatory density of states. Finally, it follows that fine structur…
We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility 3X10^7cm^2/Vs) GaAs/AlGaAs quantum wells (QWs) under millimeterwave irradiation and a weak magnetic field. Such a spike is superposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO) but having an amplitude > 300% of the MIRO, and a typical FWHM ~50 mK, comparable with the Landau level width. Systematic studies show a correlation between the spike and a pronounced negative magnetoresistance in these QWs, suggesting a mechanism based on the interplay of strong scatterers and s…
Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from ~20 GHz up to ~4 THz, and from the quasi-classical regime to the quantum Hall effect regime. At low frequencies regular MIROs were observed, with a periodicity determined by the ratio of the microwave to cyclotron frequencies. For frequencies below 150 GHz the magnetic field dependence of MIROs waveform is well described by a simplified version of an existing theoretical model, where the damping is controlled by the width of the Landau levels. In the THz frequency ra…
We report on observation of a fine structure of microwave-induced resistance oscillations in an ultraclean two-dimensional electron gas. This fine structure is manifested by multiple secondary sharp extrema, residing beside the primary ones, which emerge at high radiation power. Theoretical considerations reveal that this fine structure originates from multiphoton-assisted scattering off short-range impurities. Unique properties of the fine structure allow us to access all experimental parameters, including microwave power, and to separate different contributions to photoresistance. Furthermor…
We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall bar and the Hall resistances of SLG and tBLG in the device are measured. In the quantum Hall regime, the measurements show that the measured cross-junction resistances exhibit a series of new quantized…
The immunity of microwave-induced magneto-resistance oscillations and corresponding zero resistance regions to the direction of (circular) polarization of microwave is studied in this paper. We propose that a spontaneous circular motion of the whole electron fluid would stabilize the system and minimize the polarization sensitivity of the oscillatory DC resistance. Results of a self-consistent calculation capture the qualitative features of the experimental observation.
We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.
We report the use of bilayer graphene as an atomically-smooth contact for nanoscale devices. A two-terminal Bucky ball (C60) based molecular memory is fabricated with bilayer graphene as a contact on the polycrystalline nickel electrode. Graphene provides an atomically-smooth covering over an otherwise rough metal surface. The use of graphene additionally prohibits the electromigration of nickel atoms into the C60 layer. The devices exhibit a low-resistance state in the first sweep cycle and irreversibly switch to a high resistance state at 0.8-1.2 V bias. The reverse sweep has a hysteresis be…
Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low temperatures. The observed temperature dependence of the conductance consists of two contributions: the thermally activated (TA) conduction and the variable range hopping (VRH) conduction. We find that for the measured electric field range (0 - 1.3 V/nm) the mobility gap extracted from the TA behavior agrees well with the theoretical prediction for the band gap …
We investigate low-temperature magneto-transport in recently developed, high-quality multi-terminal suspended bilayer graphene devices, enabling the independent measurement of the longitudinal and transverse resistance. We observe clear signatures of the fractional quantum Hall effect, with different states that are either fully developed, and exhibit a clear plateau in the transverse resistance with a concomitant dip in longitudinal resistance, or incipient, and exhibit only a longitudinal resistance minimum. All observed states scale as a function of filling factor nu, as expected. An unprec…
It has been proposed that the microwave-induced ``zero-resistance'' phenomenon, observed in a GaAs two-dimensional electron system at low temperatures in moderate magnetic fields, results from a state with multiple domains, in which a large local electric field $\bE(\br)$ is oriented in different directions. We explore here the questions of what may determine the domain arrangement in a given sample, what do the domains look like in representative cases, and what may be the consequences of domain-wall localization on the macroscopic dc conductance. We consider both effects of sample boundaries…
Microwave-induced resistance oscillations (MIRO) and "zero-resistance" states (ZRS) were discovered in ultraclean two-dimensional electron systems in 2001-2003 and have attracted great interest from researchers. A comprehensive theory of these phenomena was developed in 2011: It was shown that all experimentally observed dependencies can be naturally explained by the influence of the ponderomotive forces which arise in the near-contact regions of the two-dimensional electron gas under the action of microwaves. Now we show that the same near-contact physical processes should lead to another non…
Microwave Response of the Superconducting Diode Effect in Proximitized Bilayer Graphene Interferometers
Beijing Academy of Quantum Information Sciences（北京量子信息科学研究院）；Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC)（马德里材料科学研究所，西班牙国家科学研究委员会）；Quantum Advanced Research Center (QuARC), Consejo Superior de Investigaciones Científicas (CSIC)（量子先进研究中心，西班牙国家科学研究委员会）；Department of Physics, Norwegian University of Science and Technology（挪威科技大学物理系）；Beijing Key Laboratory of Quantum Devices, Peking University（北京大学量子器件北京市重点实验室）
