We report optical pumping of neutral quantum dots leading to nuclear spin alignment with direction insensitive to polarization and wavelength of light. Measurements of photoluminescence of both "dark" and "bright" excitons in single dots reveal that nuclear spin pumping occurs via a virtual spin-flip transition between these states accompanied by photon emission. The sign of the nuclear spin polarization is determined by asymmetry in the exciton energy spectrum, rather than by the sign of the exciton spin polarization.
We describe the effects of the crossing of the exciton levels in moire quantum dots in external magnetic field. We demonstrate that the unpolarized light can create significant dynamic valley polarization of interlayer excitons in the conditions where the Zeeman energy is much smaller than the thermal energy. The angular momentum is gained by the excitons from the nuclear spin fluctuations. In the $n$-type moire quantum dots for the typical experimental parameters, the unpolarized light can lead to the complete valley polarization of the resident electrons.
We have investigated the dynamics of the electron-nuclei coupled system in quantum dots. The bunching of results of the electron spin measurements and the revival in the conditional probabilities are salient features of the nuclear spin memory. The underlying mechanism is the squeezing of the nuclear spin state and the correlations between the successive electron spin measurements. Further we make a proposal for the preparation and detection of superposition states of nuclear spins merely relying on electron spin measurements. For unpolarized, completely random nuclear spin state one can still…
A global quantitative picture of the phonon-induced two-electron spin relaxation in GaAs double quantum dots is presented using highly accurate numerical calculations. Wide regimes of interdot coupling, magnetic field magnitude and orientation, and detuning are explored in the presence of a nuclear bath. Most important, the unusually strong magnetic anisotropy of the singlet-triplet relaxation can be controlled by detuning switching the principal anisotropy axes: a protected state becomes unprotected upon detuning, and vice versa. It is also established that nuclear spins can dominate spin rel…
A novel spin orientation mechanism - dynamic electron spin polarization has been recently suggested in Phys. Rev. Lett. $\mathbf{125}$, 156801 (2020). It takes place for unpolarized optical excitation in weak magnetic fields of the order of a few millitesla. In this paper we demonstrate experimentally and theoretically that the dynamic electron spin polarization degree changes sign as a function of time, strength of the applied magnetic field and its direction. The studies are performed on indirect band-gap (In,Al)As/AlAs quantum dots and their results are explained in the framework of a theor…
We study the effect of an electric-field on an electron-hole pair in an asymmetric system of vertically coupled self-assembled quantum dots taking into account their non-perfect alignment. We show that the non-perfect alignment does not qualitatively influence the exciton Stark effect for the electric field applied in the growth direction, but can be detected by application of a perpendicular electric field. We demonstrate that the direction of the shift between the axes of non-aligned dots can be detected by rotation of a weak electric field within the plane of confinement. Already for a near…
We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAs absorber with built-in GaSb type-II quantum dots (QDs) [a gradual AlxGa1-xAs absorber with built-in AlyGa1-ySb QDs (0<x=y<0.40) as a variant] separated from the depletion region. We study the modification of the band alignment at type-II interface by two-photon absorption of concentrated sunlight. Our calculation shows that photogenerated carriers produce localized exciton-like electron-hole pairs spatially separated at QDs. Local field of such pairs may essentially modify potential barrier surrounding QDs, increase re…
We investigate theoretically the hyperfine-induced dephasing of two-electron-spin states in a double quantum dot with a finite singlet-triplet splitting J. In particular, we derive an effective pure dephasing Hamiltonian, which is valid when the hyperfine-induced mixing is suppressed due to the relatively large J and the external magnetic field. Using both a quantum theory based on resummation of ring diagrams and semiclassical methods, we identify the dominant dephasing processes in regimes defined by values of the external magnetic field, the singlet-triplet splitting, and inhomogeneity in t…
A consistent semiquantitative theoretical analysis of electronic Raman scattering from many-electron quantum dots under resonance excitation conditions has been performed. The theory is based on random-phase-approximation-like wave functions, with the Coulomb interactions treated exactly, and hole valence-band mixing accounted for within the Kohn-Luttinger Hamiltonian framework. The widths of intermediate and final states in the scattering process, although treated phenomenologically, play a significant role in the calculations, particularly for well above band gap excitation. The calculated p…
The exciton recombination and spin dynamics in (In,Al)As/AlAs quantum dots (QDs) with indirect band gap and type-I band alignment are studied. The negligible (less than $0.2~μ$eV) value of the anisotropic exchange interaction in these QDs prevents a mixing of the excitonic basis states with pure spin and allows for the formation of spin polarized bright excitons for quasi-resonant circularly polarized excitation. In a longitudinal magnetic field, the recombination and spin dynamics of the excitons are controlled by the hyperfine interaction between the electron and nuclear spins. A QD blockade…
An unpolarized charge current passing through a chaotic quantum dot with spin-orbit coupling can produce a spin polarized exit current without magnetic fields or ferromagnets. We use random matrix theory to estimate the typical spin polarization as a function of the number of channels in each lead in the limit of large spin-orbit coupling. We find rms spin polarizations up to 45% with one input channel and two output channels. Finite temperature and dephasing both suppress the effect, and we include dephasing effects using a new variation of the third lead model. If there is only one channel i…
We propose a new approximation scheme within equation of motion approach (EOM) to spin polarized transport through a quantum dot coupled to ferromagnetic leads. It has some advantages over a widely used in the literature standard EOM technique, in particular when we are interested in spin polarized quantities. Namely, it gives the values of the dot spin polarization which are closer to the ones obtained within numerical renormalization group (NRG), than the standard EOM approach. While restoring the Kondo effect, the spin polarization vanishes and the transport becomes unpolarized, in agreemen…
The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to 1D quantum wire (spin gun) for various semiconductor materials is studied. Unlike the model considered in [1] a model proposed here is based on the extension theory model (ETM) and assumes the quantum dots to have an arbitrary internal structure, i.e. the internal energy levels. The presence of internal structure in quantum dots results in energy-dependent interaction between electrons and quantum dots. This interaction changes the transmission mode of the spin current through the spin gun. …
The spin structure and spin dynamics of excitons in an ensemble of (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment, containing both direct and indirect band gap dots, are studied. Time-resolved and spectral selective techniques are used to distinguish between the direct and indirect QDs. The exciton fine structure is studied by means of optical alignment and optical orientation techniques in magnetic fields applied in the Faraday or Voigt geometries. A drastic difference in emission polarization is found for the excitons in the direct QDs involving a $Γ$-valley electron and the ex…
We study the Kondo effect in a quantum dot which is coupled to ferromagnetic leads and analyse its properties as a function of the spin polarization of the leads. Based on a scaling approach we predict that for parallel alignment of the magnetizations in the leads the strong-coupling limit of the Kondo effect is reached at a finite value of the magnetic field. Using an equation-of-motion technique we study nonlinear transport through the dot. For parallel alignment the zero-bias anomaly may be split even in the absence of an external magnetic field. For antiparallel spin alignment and symmetri…
We study quantum states of electrons in magnetically doped quantum dots as a function of exchange coupling between electron and impurity spins, the strength of Coulomb interaction, confining potential, and the number of electrons. The magnetic phase diagram of quantum dots, doped with a large number of magnetic Mn impurities, can be described by the energy gap in the spectrum of electrons and the mean field electron-Mn exchange coupling. A competition between these two parameters leads to a transition between spin-unpolarized and spin-polarized states, in the absence of applied magnetic field.…
The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to 1D quantum wire (spin gun) for various semiconductor materials is studied. The Breit-Fermi term for spin-spin interaction in the effective Hamiltonian of the device is shown to result in a dependence of transmission coefficient on the spin orientation. The difference of transmission probabilities for singlet and triplet channels can reach few percent for a single quantum dot. For several quantum dots in the array due to interference effects it can reach approximately 100% for some energy int…
We study electron tunneling through two small ferromagnetic dots. Quantum charge fluctuations and interdot coupling make each Coulomb peak of the conductance at zero interdot coupling split across. The interdot tunnel coupling is determined by the relative orientation of magnetizations of the two dots, leading to different splitting energies of the Coulomb peaks in parallel and antiparallel magnetization alignments. As a result, a very large tunneling magnetoresistance occurs near the Coulomb peaks, and its sign may be either positive or negative.
Cascade spin dynamics of excitons localized in indirect-band-gap (In,Al)As/AlAs quantum dots with type-I band alignment
Ioffe Institute, Russian Academy of Sciences（俄罗斯科学院约费研究所）；Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences（俄罗斯科学院西伯利亚分院拉扎诺夫半导体物理研究所）
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by gate geometry. For the triple and quadruple dots we study gate-tunable inter-dot tunnel couplings. Particularly for the triple dot we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot device has gate performance relevant for …
We have developed an ensemble density functional theory which includes spin degrees of freedom for nonuniform quantum Hall systems. We have applied this theory using a local-spin-density approximation to study the edge reconstruction of parabolically confined quantum dots. For a Zeeman splitting below a certain critical value, the edge of completely polarized maximum density droplet reconstructs into a spin-unpolarized structure. For larger Zeeman splittings, the edge remains polarized and develops an exchange hole.
We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), whilst the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the temperature of the heat reservoir. This current can be either enhanced or suppressed, depending on the relative energetic alignment of the QD levels. Thus, the system can be used to control a charge cu…
We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows to fabricate robust in-plane gates and Cr/Au top gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements.
Spatially indirect Type-II band alignment in magnetically-doped quantum dot (QD) structures provides unexplored opportunities to control the magnetic interaction between carrier wavefunction in the QD and magnetic impurities. Unlike the extensively studied, spatially direct, QDs with Type-I band alignment where both electrons and holes are confined in the QD, in ZnTe QDs embedded in a (Zn,Mn)Se matrix only the holes are confined in the QDs. Photoexcitation with photon energy 3.06 eV (2.54 eV) generates electron-hole pairs predominantly in the (Zn,Mn)Se matrix (ZnTe QDs). The photoluminescence …
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundame…
We report on the realization of scalable single-photon sources (SPSs) based on single site-controlled quantum dots (SCQDs) and deterministically fabricated microlenses. The fabrication process comprises the buried-stressor growth technique complemented with low-temperature in-situ electron-beam lithography for the integration of SCQDs into microlens structures with high yield and high alignment accuracy. The microlens-approach leads to a broadband enhancement of the photon-extraction efficiency of up to (21 $\pm$ 2) $\%$ and a high suppression of multi-photon events with g$^{(2)}$($τ$ = 0) $<$…
We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few- and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision align…
We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II (staggered) band alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15nm and 1.5 meV respectively. When compared to bulk InP, the excitonic binding is weaker due to the repulsive (type-II) potential at the hetero-interface. The measurements are extended to over almost six orders of magnitude of laser excitation powers and to magnetic fields of up to 50 tesla. It is shown that the excitation power can be used to tune the average hole occupancy of the qu…
We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom. We identify the two-hole ground-state to be a spin-triplet and valley-singlet state. This spin alignment can be seen as Hund's rule for a valley-degenerate system, which is fundamentally different to quantum dots in carbon nan…
We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g* significantly. g* is almost completely quenched when the magnetic field is aligned with the nanowire axis. These findings confirm recent calculations, where the obtained anisotropy is attributed to a Rashba-type spin-orbit interaction induced by heavy-hole light-hole mixing. …
The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical model calculations reveal a strong dependence of the exciton lifetime on the thickness of the interface diffusion layer. The lifetime of excitons with a particular optical transition energy varies because…
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD densities required for non-classical single-QD light sources. The photoluminescence (PL) experiments reveal that the GaSb QDs have an indirect-direct bandgap crossover at telecom wavelengths. This is due to the alignment of the Γ and L valleys in the conduction band as a result of quantum confinement controlled by dimensions of the nanostructure. We show th…
We study the Kondo effect in a quantum dot coupled to two noncollinear ferromagnetic leads. First, we study the spin splitting $δε=ε_{\downarrow}-ε_{\uparrow}$ of an energy level in the quantum dot by tunnel couplings to the ferromagnetic leads, using the Poor man's scaling method. The spin splitting takes place in an intermediate direction between magnetic moments in the two leads. $δε\propto p\sqrt{\cos^2(θ/2)+v^2\sin^2(θ/2)}$, where $p$ is the spin polarization in the leads, $θ$ is the angle between the magnetic moments, and $v$ is an asymmetric factor of tunnel barriers ($-1<v<1$). Hence t…
We use a path integral quantum Monte Carlo method to simulate excitons and biexcitons in core shell nanocrystals with Type-I, II and quasi-Type II band alignments. Quantum Monte Carlo techniques allow for all quantum correlations to be included when determining the thermal ground state, thus producing accurate predictions of biexciton binding. These subtle quantum correlations are found to cause the biexciton to be binding with Type-I carrier localization and strongly anti-binding with Type-II carrier localization, in agreement with experiment for both core shell nanocrystals and dot in rod na…
We present here an atomistic theory of the electronic and optical properties of hexagonal InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum dots are unique in that their heights, shapes, and diameters are well known. Using a combined valence-force-field, tight-binding, and configuration-interaction approach we perform atomistic calculations of single-particle states and excitonic, biexcitonic and trion complexes as well as emission spectra as a function of the quantum dot height, diameter and As versus P concentration. The atomistic tight-binding parameter…
Having already achieved near-unity quantum yields, with promising properties for light-emitting diode, lasing, and charge separation applications, colloidal core/shell quantum dots have great technological potential. The shell thickness and band alignment of the shell and core materials are known to influence the efficiency of these devices. In many such applications, a key to improving the efficiency requires a deep understanding of multiexcitonic states. Herein, we elucidate the shell thickness and band alignment dependencies of the biexciton Auger recombination lifetime for quasi-type-II Cd…
We suggest a new spin orientation mechanism for localized electrons: $dynamic~electron~spin~polarization~provided~by~nuclear~spin~fluctuations$. The angular momentum for the electrons is gained from the nuclear spin system via the hyperfine interaction in a weak magnetic field. For this the sample is illuminated by an unpolarized light, which directly polarizes neither the electrons nor the nuclei. We predict, that for the electrons bound in localized excitons 100% spin polarization can be reached in longitudinal magnetic fields of a few millitesla. The proof of principle experiment is perform…
The magneto-photoluminescence of type-II (ZnMn)Te quantum dots is presented. As a result of the type-II band alignment Aharonov-Bohm (AB) oscillations in the photoluminescence intensity are evident, confirming previous predictions for the suitability of this geometry to control the optical Aharonov-Bohm effect in semiconductor systems. Moreover, the system demonstrates an interesting interplay between the AB effect and the spin polarization in diluted magnetic semiconductor quantum dots. The intensity of the AB oscillations increases with both magnetic field and the degree of optical polarizat…
We present a new method for calculating ground state properties of quantum dots in high magnetic fields. It takes into account the equilibrium positions of electrons in a Wigner cluster to minimize the interaction energy in the high field limit. Assuming perfect spin alignment the many-body trial function is a single Slater determinant of overlapping oscillator functions from the lowest Landau level centered at and near the classical equilibrium positions. We obtain an analytic expression for the ground state energy and present numerical results for up to N=40.
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe that the quantum dot emission shows anomalous temperature dependence,~i.e., increase of energy with temperature increase from 10~K to $\sim$70~K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band ${\bf k}\cdot{\bf p}$ theory with multiparticle correct…
We explore similarities between the quantum wells and quantum dots used as optical gain media in semiconductor lasers. We formulate a mapping procedure which allows a simpler, often analytical, description of quantum well lasers to study more complex lasers based on quantum dots. The key observation in relating the two classes of laser is that the influence of a finite capture time on the operation of quantum dot lasers can be approximated well by a suitable choice of the gain compression factor in quantum well lasers. Our findings are applied to the rate equations for both conventional (spin-…
Single strain-induced quantum dots are isolated for optical experiments by selective removal of the inducing InP islands from the sample surface. Unpolarized emission of single, bi- and triexciton transitions are identified by power-dependent photoluminescence spectroscopy. Employing time-resolved experiments performed at different excitation powers we find a pronounced shift of the rise and decay times of these different transitions as expected from cascaded emission. Good agreement is found for a rate equation model for a three step cascade.
The virtual (i.e., fundamental many body quantum theory-based, computational) synthesis method is used to establish electronic templates of about 30 non-stoichiometric nanosystems composed of nickel and oxygen atoms and ranging from about 6 Å to 6 nm in linear dimensions. Flexible and stretchable Ni-O bond in such structures accommodates various ratios of Ni to O atoms, and both antiferromagnetic and ferromagnetic spin alignments. Depending on synthesis conditions, smaller Ni-O quantum dots (QDs) composed of up to 14 atoms or so may have both types of spin alignments, while quantum-confined, q…
We study the spin-resolved subgap transport in a triple quantum-dot system coupled to one superconducting and two ferromagnetic leads. We examine the Andreev processes in the parallel and antiparallel alignments of ferromagnets magnetic moments in both the linear and nonlinear response regimes. The emphasis is put on the analysis of the current cross-correlations between the currents flowing through the left and right arms of the device and relevant electron waiting time distributions. We show that both quantities can give an important insight into the subgap transport processes and their anal…
In van der Waals heterostructures (HS) consisting of stacked MoSe$_2$ and WSe$_2$ monolayers, optically bright interlayer excitons (ILE) can be observed when the constituent layers are crystallographically aligned. The symmetry of the monolayers allows for two different types of alignment, in which the momentum-direct interlayer transitions are either valley-conserving (R-type alignment) or changing the valley index (H-type anti-alignment). Here, we study the valley polarization dynamics of ILE in magnetic fields up to 30~Tesla by time-resolved photoluminescence (PL). For all ILE types, we fin…
Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10^7 and backgr…
Tunneling-injection structures are incorporated in semiconductor lasers in order to overcome the fundamental dynamical limitation due to hot carrier injection by providing a carrier transport path from a cold carrier reservoir. The tunneling process itself depends on band alignment between quantum-dot levels and the injector quantum well, especially as in these devices LO-phonon scattering is dominant. Quantum dots with their first excited state near the quantum well bottom profit most from tunnel coupling. As inhomogeneous broadening is omnipresent in quantum dot structures, this implies that…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of single quantum dots with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single quantum dots with respect to alignment features with an average position u…
In this study we numerically calculate the spatial profile of mechanical strain on self-assembled germanium (Ge) quantum dots (QDs) grown on a silicon (Si) substrate. Although the topic has been exhaustively studied, interesting features have not been explained or even mentioned in the literature yet. We studied the effect of the cap layer considering two cases: capped QDs (where a Si cap is present above the Ge QDs) and uncapped QDs (where no Si is present above the Ge QDs). We observed that Ge in the capped QDs is more strained compared with the the uncapped QDs. This expected effect is attr…
As is well known the absorption of circularly polarized light in semiconductors results in optical orientation of electron spins and helicity-dependent electric photocurrent, and the absorption of linearly polarized light is accompanied by optical alignment of electron momenta. Here we show that the absorption of unpolarized light in a quantum well (QW) leads to generation of a pure spin current, although both the average electron spin and electric current are vanishing.
Hereby, we present results of finite-difference time-domain simulations of technologically undemanding photonic structures offering a significant improvement in the spectrally broad extraction efficiency of emission from a quantum emitter at the third telecommunication window. The modelling is performed for cylindrical and cuboidal mesa structures containing an exciton confined in a single InAs/InP quantum dot. We investigate the emission pattern from such mesas made of InP (which can be exchanged with AlGaInAs lattice-matched to InP) for two cases: monolithic InP material or InP/AlGaInAs dist…
