A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is switched by spin transfer torque. Validity of its logic operation is demonstrated by micromagnetic simulation. A version of such devices with perpendicular magnetization is examined. Switching encompasses moving domain walls. The device reuses most of the materials and structures from spin torque RAM, and is entirely compatible with CMOS technology.
Coexistence of unconventional spin-orbit torque and in-plane Hall effect in a single ferromagnetic layer
Tsung-Dao Lee Institute, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University（上海交通大学李政道研究所、人工结构量子控制教育部重点实验室、物理与天文学院）；Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, School of Information Science and Technology, Shanghai Tech University（上海科技大学信息科学与技术学院、能效与定制人工智能集成电路上海市工程研究中心）；Department of Materials Science and Engineering, National University of Singapore（新加坡国立大学材料科学与工程系）；Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University（同济大学物理科学与技术学院、特种人工微结构材料与技术上海市重点实验室）；Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University（东南大学物理学院、量子材料与器件教育部重点实验室）；Aix-Marseille Université, CNRS, CINaM（艾克斯-马赛大学、法国国家科学研究中心、纳米科学中心）；Hefei National Laboratory（合肥国家实验室）
