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arXiv 1005.4577cond-mat.mes-hall
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$K$边X射线磁圆二色性研究(III,Mn)As铁磁半导体中元素分辨轨道极化

Element-resolved orbital polarization in (III,Mn)As ferromagnetic semiconductors from $K$ edge x-ray magnetic circular dichroism

P. Wadley, A. A. Freeman, K. W. Edmonds, G. van der Laan, J. S. Chauhan, R. P. Campion, A. W. Rushforth, B. L. Gallagher, C. T. Foxon, F. Wilhelm, A. G. Smekhova, A. Rogalev

摘要:

利用X射线磁圆二色性(XMCD)测量了(Ga,Mn)As和(In,Ga,Mn)As薄膜费米能级附近的元素特性和空态极化。在As K吸收边的XMCD由位于边缘的低能量侧的单个峰组成,其随着铁磁Mn磁矩的浓度而增加。在Mn K边缘的XMCD是更详细的,是强烈的浓度依赖性,这被解释为低Mn掺杂的空穴本地化的签名。结果表明,在低掺杂的绝缘膜和高掺杂的金属膜中,极化空穴的性质明显不同,在穿过金属-绝缘体转变时,空穴轨道磁矩从Mn转移到As.

英文摘要:

Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the As K absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the Mn K edge is more detailed and is strongly concentration-dependent, which is interpreted as a signature of hole localization for low Mn doping. The results indicate a markedly different character of the polarized holes in low-doped insulating and high-doped metallic films, with a transfer of the hole orbital magnetic moment from Mn to As sites on crossing the metal-insulator transition.

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