金属与拓扑绝缘体界面的Mott散射
Mott scattering at the interface between a metal and a topological insulator
摘要：
我们计算了金属与三维拓扑带绝缘体界面处的自旋激活散射矩阵和局域谱。结果表明，存在一个临界入射角，在该入射角处自旋翻转反射完全（100%），自旋旋转角跳跃$π$。我们讨论了这一现象的起因，系统地研究了自旋翻转和自旋守恒散射振幅与界面透明性和金属费米面参数的关系。界面光谱包含一个定义良好的狄拉克锥在隧道极限，并顺利地演变成一个连续的金属诱导的间隙状态良好的接触。我们还研究了Bi $_2$ Se $_3$的复杂能带结构。
英文摘要：
We compute the spin-active scattering matrix and the local spectrum at the interface between a metal and a three-dimensional topological band insulator. We show that there exists a critical incident angle at which complete (100%) spin flip reflection occurs and the spin rotation angle jumps by $π$. We discuss the origin of this phenomena, and systematically study the dependence of spin-flip and spin-conserving scattering amplitudes on the interface transparency and metal Fermi surface parameters. The interface spectrum contains a well-defined Dirac cone in the tunneling limit, and smoothly evolves into a continuum of metal induced gap states for good contacts. We also investigate the complex band structure of Bi$_2$Se$_3$.
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