莫特绝缘体中绝缘体-金属相变的量子传感
Quantum Sensing of Insulator-to-Metal Transitions in a Mott Insulator
摘要：
氮空位（NV）中心是金刚石中具有光学活性的原子缺陷，由于其优异的量子相干性和在真实环境中的多功能性，在量子传感、网络和计算应用中引起了极大的兴趣。利用这些优势，我们报告了近端莫特绝缘体中基于NV的电驱动绝缘体-金属过渡（IMT）局部感知。我们研究了原始的和离子辐照的VO 2薄膜器件的电阻开关特性进行光学检测NV电子自旋共振测量。这些测量探针的局部温度和磁场在电偏置的VO 2设备，这是在协议的全球运输测量结果。在原始器件中，电驱动IMT通过焦耳加热进行到转变温度，而在离子辐照器件中，转变发生在非热的，远低于转变温度。我们的研究结果提供了第一个直接的证据，非热电诱导IMT的莫特绝缘体，突出了NV量子传感器在探索纳米级的热和电行为莫特材料提供的重大机遇。
英文摘要：
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, we report on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. We studied the resistive switching properties of both pristine and ion-irradiated VO2 thin film devices by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically-driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs non-thermally, well below the transition temperature. Our results provide the first direct evidence for non-thermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
