HFinFET：一种可扩展、高性能、低泄漏混合N沟道FET
HFinFET: A Scalable, High Performance, Low Leakage Hybrid N-Channel FET
摘要：
在这封信中，我们提出了一种新的晶体管，称为HFinFET，这是一个混合的HEMT和FinFET的设计和模拟研究，以获得优良的性能和良好的关态控制。其次是设计的描述，3D器件模拟已被执行，以预测器件的特性。该器件已对最先进的HEMT以及平面和非平面硅NMOSFET的可比栅极长度的数据，使用标准的基准测试技术进行了基准测试。
英文摘要：
In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good off state control. Followed by the description of the design, 3D device simulation has been performed to predict the characteristics of the device. The device has been benchmarked against published state of the art HEMT as well as planar and non-planar Si NMOSFET data of comparable gate length using standard benchmarking techniques.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
