FET-LET Hybrid 6 T SRAM的建议
Proposal of a FET-LET Hybrid 6T SRAM
摘要：
对于用于高性能高速缓冲存储器的高速、低功率、低泄漏和低噪声静态随机存取存储器（SRAM）存在极高的需求。SRAM的能效在高性能和超低功耗便携式电池供电电子系统中至关重要。本文分析了传统的6 FET 6 T SRAM单元/阵列的总体速度和总能耗的影响因素，特别是存取晶体管的作用，指出了改进的需要和方向。提出了一种混合型6 T SRAM，其中两个存取FET被光效应晶体管（LET）取代，电字线被光波导（OWG）取代。分析表明，这种混合SRAM在提高开关速度和总能耗方面具有较传统6 T SRAM更大的潜力。一个原型的混合SRAM阵列的64 KB的数值分析表明，在读延迟和读能耗，分别减少了7和34的因素;和4和6的写延迟和写能耗，分别当访问FET被替换为LET。文中还简要讨论了这种混合结构对外围电路和辅助电路的潜在影响以及LET在外围电路和辅助电路中的应用。
英文摘要：
There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high performance and ultralow-power portable, battery operated electronic systems. In this article the factors affecting the over-all speed and total energy consumption of a conventional 6T SRAM cell/array with 6 FETs, particularly roles of access tran-sistors are analyzed to highlight the needs and directions for improvement. A hybrid 6T SRAM with two access FETs being replaced by light-effect transistors (LETs) and the electrical word lines replaced by optical waveguides (OWGs) is proposed. This hybrid SRAM is analyzed to reveal its potential in im-provement of the switching speed and thus total energy con-sumption over the conventional 6T SRAM. Numerical analyses of a prototype hybrid SRAM array of 64 KB show a factor of 7 and 34 reduction in read delay and read energy consumption, respectively; and 4 and 6 in write delay and write energy con-sumption, respectively, when the access FETs are replaced by LETs. The potential impacts on the peripheral and assist cir-cuits due to this hybrid structure and application of the LETs there are also briefly discussed.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
