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arXiv 1003.4195cond-mat.dis-nn
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无序铁磁薄膜中的非对称金属-绝缘体转变

Asymmetric metal-insulator transition in disordered ferromagnetic films

R. Misra, A. F. Hebard, K. A. Muttalib, P. Wolfle

摘要:

我们目前的实验数据和理论解释的电导附近的金属-绝缘体的转变在薄的铁磁Gd膜的厚度约为2-10 nm。由自旋波激发的准粒子散射引起的大的相位弛豫速率使得在所考虑的薄层电阻范围内的退相长度L_phi < b,使得有效尺寸为d = 3。所观察到的近似分数温度幂律的电导率归因于附近的过渡的标度制度。的电导率数据作为温度和无序强度的函数崩溃的金属和绝缘制度的两个标度曲线。在金属侧,动力学指数z约为2.5,相关长度临界指数ν'约为1.4,在绝缘侧,局域化长度指数ν约为0.8。

英文摘要:

We present experimental data and a theoretical interpretation on the conductance near the metal-insulator transition in thin ferromagnetic Gd films of thickness b approximately 2-10 nm. A large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L_phi < b in the range of sheet resistances considered, so that the effective dimension is d = 3. The observed approximate fractional temperature power law of the conductivity is ascribed to the scaling regime near the transition. The conductivity data as a function of temperature and disorder strength collapse on to two scaling curves for the metallic and insulating regimes. The best fit is obtained for a dynamical exponent z approximately 2.5 and a correlation length critical exponent ν' approximately 1.4 on the metallic side and a localization length exponent νapproximately 0.8 on the insulating side.

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