This paper introduces an oscillator scheme based on the oscillations of magnetic domain walls due to spin-polarized currents, where the current is injected perpendicular to the sample plane in a localized part of a nanowire. Depending on the geometrical and physical characteristic of the system, we identify two different dynamical regimes (auto-oscillations) when an out-of-plane external field is applied. The first regime is characterized by nucleation of domain walls (DWs) below the current injection site and the propagation of those up to the end of the nanowire, we also found an oscillation frequency larger than 5GHz with a linear dependence on the applied current density. This simple system can be used as a tuneable steady-state domain wall oscillator. In the second dynamical regime, we observe the nucleation of two DWs which propagate back and forth in the nanowire with a sub-GHz oscillation frequency. The micromagnetic spectral mapping technique shows the spatial distribution of the output power is localized symmetrically in the nanowire. We suggest that this configuration can be used as micromagnetic transformer to decouple electrically two different circuits.
We demonstrate numerically the ability to displace a magnetic domain wall by a remote spin current injection. We consider a long and narrow magnetic nanostripe with a single domain wall (DW). The spin-polarized current is injected perpendicularly to the plane of the film (CPP) through a small nanocontact which is located at certain distance from the domain wall initial position. We show theoretically that the DW motion can be initiated not only by conventional spin-transfer torque but also by indirect spin-torque, created by a remote spin-current injection and then transferred to the DW by the…
We propose an effect whereby an electric current along the interface between a ferromagnetic and normal metal leads to injection of pure spin current into the normal metal, if the magnetization-direction in the ferromagnet varies along the direction of current. For the specific example of a ferromagnetic domain wall, we compute the inverse spin-Hall effect voltage this spin current gives rise to when injected into a Pt layer. Furthermore, we show that this pure spin current leads to modification of the parameters that govern spin transfer and current-driven domain-wall motion, which can be use…
We investigate how to facilitate the injection of domain walls in chiral ferromagnetic nanowires by electrical means. We calculate the critical current density above which domain walls are injected into the nanowire depending on the material parameters and the source of interaction including spin-transfer torques as well as spin-orbit torques. We demonstrate that the Dzyaloshinskii-Moriya interaction can significantly reduce the required critical current to inject the types of domain walls favored by the Dzyaloshinskii-Moriya interaction. We find that in chiral magnets it is only possible to s…
A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.
The purpose of the research is the construction of the analytical model for description of spin-polarized current-driven ferromagnetic domain wall motion with a skyrmion building block. The dependence of velocity of ferromagnetic domain wall motion with a skyrmion building block is found as a function of driving torques and an external magnetic field strength.
Circularly polarized optical excitation is used to demonstrate the efficient injection of spin-polarized excitons to individual self-assembled CdSe quantum dots in ZnSe barrier. The exciton spin-transfer is studied by means of polarization-resolved single dot spectroscopy performed in magnetic field applied in Faraday configuration. Detailed analysis of the neutral exciton photoluminescence spectra reveals the presence of exciton spin relaxation during its lifetime in a quantum dot. This process is seen for both nonmagnetic dots and those containing single Mn$^{2+}$ ions. Taking this into acco…
We demonstrate electrical spin injection into multilayer graphene (MLG) in a lateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Huesler electrode. Exfoliated MLG was transferred onto pre-patterned epitaxial CFS wires grown on an Si(111) substrate by a polymer-based transfer method. This method enabled us to fabricate multiple single-crystal CFS electrodes in contact with MLG. Electrical spin injection from CFS to MLG was detected through non-local magnetoresistance (MR) measurement. A non-local spin signal of 430 ohm was observed; this is the largest value among all reported …
We calculate circularly polarized luminescence emitted parallel (vertical emission) and perpendicular (edge emission) to the growth direction from a quantum well in a spin light-emitting diode (spin-LED) when either the holes or electrons are spin polarized. It is essential to account for the orbital coherence of the spin-polarized holes when they are captured in the quantum well to understand recent experiments demonstrating polarized edge emission from hole spin injection. The calculations explain many features of the circular polarizations of edge and vertically emitted luminescence for spi…
Magnetic injection photocurrents in valley polarized states of twisted bilayer graphene
Donostia International Physics Center（圣塞巴斯蒂安国际物理中心）；Department of Physics, Columbia University（哥伦比亚大学物理系）；IKERBASQUE, Basque Foundation for Science（伊卡巴斯基克，巴斯克科学基金会）
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accum…
All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one dimensional (1D) conductor, one of the simplest geometries for integrated quantum devices, away from the conventional Ohmic regime. Direct measurement of the spin polarization of the emitted current was performed when the momentum degeneracy was lifted, wherein both the 1D polarizer for spin injection and the analyzer for spin detection were demonstrated. The result…
Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations. The optic…
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands decreases the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.
We analyze the time evolution of spin-polarized electron wave packets injected into the edge states of a two-dimensional topological insulator. In the presence of electron interactions, the system is described as a helical Luttinger liquid and injected electrons fractionalize. However, because of the presence of metallic detectors, no evidences of fractionalization are encoded in dc measurements, and in this regime the system do not show deviations from its non-interacting behavior. Nevertheless, we show that the helical Luttinger liquid nature emerges in the transient dynamics, where signatur…
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $kΩ$ at 300 $K$. The yield of device resistances below 100 $kΩ$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads. The relative difference between the resistance in the antiparallel (AP) orientation and the parallel (P) orientation is about 2%.
We propose a photoexcitation scheme for pure spin current generation in graphene subject to a Rashba spinorbit coupling. Although excitation using circularly-polarized light does not result in optical orientation of spins in graphene unless an additional magnetic field is present, we show that excitation with linearly-polarized light at normal incidence yields spin current injection without magnetic field. Spins are polarized within the graphene plane and are displaced in opposite directions, with no net charge displacement. The direction of the spin current is determined by the linear polariz…
We study in detail the classical and quantum depinning of a domain wall (DW) induced by a fast-varying spin-polarized current. By confirming the adiabatic condition for calculating the spin-torque in fast-varying current case, we show that the time-dependent spin current has two critical values that determine the classical depinning of DW. This discovery successfully explains the recent experiments. Furthermore, a feasible way is proposed to lower the threshold of spin currents and control the direction of DW's motion. Finally, the quantum properties for the depinning of DW are also investigat…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk semiconductor ($n$-GaAs) via schottky contact. For detection, a diluted magnetic semiconductor ($p$-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the $p$-$n$ junction.
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric current. Ferromagnetic spin waves can only be right-circularly polarized. In contrast, antiferromagnetic spin waves have full polarization degree of freedom, including both left- and right-circular polarizations, as well as all possible linear or elliptical ones. Here we demonstrate that, due to the Dzyaloshinskii-Moriya interaction, the spin wave driven domain …
We demonstrate a novel method for the excitation of sizable magneto-optical effects in Au by means of the laser-induced injection of hot spin-polarized electrons in Au/Fe/MgO(001) heterostructures. It is based on the energy- and spin-dependent electron transmittance of Fe/Au interface which acts as a spin filter for non-thermalized electrons optically excited in Fe. We show that after crossing the interface, majority electrons propagate through the Au layer with the velocity on the order of 1 nm/fs (close to the Fermi velocity) and the decay length on the order of 100 nm. Featuring ultrafast f…
We present a theoretical formalism to address the dynamics of textured, noncolliear antiferromagnets subject to spin current injection. We derive sine-Gordon type equations of motion for the antiferromagnets, which are applicable to technologically important antiferromagnets such as Mn3Ir and Mn3Sn, and enables an analytical approach to domain wall dynamics in those materials. We obtain the expression for domain wall velocity, which is estimated to reach around 1 km/s in Mn3Ir by exploiting spin Hall effect with electric current density around 10^11A/m^2.
Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively studied in view of their potentials in valleytronics. Here, we study the magnonic version of domain wall excitations in 2D honeycomb ferromagnetic bilayers (FBL) with collinear order. In particular, we explore the implications of Dzyaloshinskii-Moriya interaction (DMI) and electrostatic doping (ED) on the existence and characteristics of 1D magnons confined to l…
Memory and logic devices that encode information in magnetic domains rely on the controlled injection of domain walls to reach their full potential. In this work, we exploit the chiral coupling induced by the Dzyaloshinskii-Moriya interaction between in-plane and out-of-plane magnetized regions of a Pt/Co/AlO\textsubscript{x} trilayer in combination with current-driven spin-orbit torques to control the injection of domain walls into magnetic conduits. We demonstrate that the current-induced domain nucleation is strongly inhibited for magnetic configurations stabilized by the chiral coupling an…
The quest for a spin-polarized organic light emitting diode (spin-OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device two ferromagnetic electrodes are used to enhance the electroluminescence intensity of the OLED through a magnetic control of the spin polarization of the injected carriers. The major difficulty is that the driving voltage of an OLED device exceeds of a few volts, while spin injection in organic materials is only efficient at low voltages. We report here the fabrication of a spin-OLED that uses a conjugated polymer as bipolar sp…
Finding a new control parameter for magnetic domain wall (DW) motion in magnetic nanostructures is important in general and in particular for the spintronics applications. Here, we show that a circularly polarized magnetic field (CPMF) at GHz frequency (microwave) can efficiently drive a DW to propagate along a magnetic nanowire. Two motion modes are identified: rigid-DW propagation at low frequency and oscillatory propagation at high frequency. Moreover, DW motion under a CPMF is equivalent to the DW motion under a uniform spin current in the current perpendicular to the plane magnetic config…
Atomically thin two-dimensional layer of honeycomb crystalline carbon known as graphene is a promising system for electronics. It has a point-like Fermi surface, which is very sensitive to external potentials. In particular, Zeeman magnetic field parallel to the graphene layer splits electron bands and creates fully spin-polarized and geometrically congruent circular Fermi surfaces of particle and hole type. In the presence of electric field, particles and holes with opposite spins drift in opposite direction. These phenomena are likely to be of interest for developing graphene-based spintroni…
We explore universal behaviors of magnetic domain wall driven by the spin-transfer of an electrical current, in a ferromagnetic (Ga,Mn)(As,P) thin film with perpendicular magnetic anisotropy. For a current direction transverse to domain wall, the dynamics of the thermally activated creep regime and the depinning transition are found to be compatible with a self-consistent universal description of magnetic field induced domain wall dynamics. This common universal behavior, characteristic of the so-called quenched Edwards-Wilkinson universality class, is confirmed by a complementary and independ…
Topological insulators have surface states with a remarkable helical spin structure, with promising prospects for applications in spintronics. Strategies for generating spin polarized currents, such as the use of magnetic contacts and photoinjection, have been the focus of extensive research. While several optical methods for injecting currents have been explored, they have all focused on one-photon absorption. Here we consider the use of both a fundamental optical field and its second harmonic, which allows the injection of spin polarized carriers and current by a nonlinear process involving …
Optical properties of single-wall carbon nanotubes (SWCNTs) for light polarized parallel to the nanotube axis have been extensively studied, whereas their response to light polarized perpendicular to the nanotube axis has not been well explored. Here, by using a macroscopic film of highly aligned single-chirality (6,5) SWCNTs, we performed a systematic polarization-dependent optical absorption spectroscopy study. In addition to the commonly observed angular-momentum-conserving interband absorption of parallel-polarized light, which generates $E_{11}$ and $E_{22}$ excitons, we observed a small …
We report selective injection of both spin-up and spin-down single electrons into a quantum dot (QD) from spin-polarized non-equilibrium quantum Hall edge channels (ECs) generated by selective transmission of spin-resolved ECs using a surface gate placed at a distance from the QD. We change the spin polarization of non-equilibrium ECs by changing the bias voltages applied to different source Ohmic contacts. The efficiency of spin-up electron injection reaches 0.5, which is approximately 0.2 higher than that induced by spin-dependent tunnel coupling between QD and ECs. On the other hand, the ef…
A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have been reported only in non-magnetic Dirac systems. In this work we propose a realization of topologically protected spin-polarized flat bands generated by domain walls in planar magnetic topological ins…
Spin waves in antiferromagnets are linearly or circularly polarized. Depending on the polarization, traversing spin waves alter the staggered field in a qualitatively different way. We calculate the drift velocity of a moving domain wall as a result of spin wave mediated forces, and show that the domain wall moves in opposite directions for linearly and circularly polarized waves. The analytical results agree with a micromagnetics simulation of an antiferromagnetic domain wall driven by a localized and alternating magnetic field.
One of the important issues in nanomagnetism is to lower the current needed for a technologically useful domain wall (DW) propagation speed. Based on the modified Landau-Lifshitz-Gilbert (LLG) equation with both Slonczewski spin-transfer torque and the field-like torque, we derive the optimal spin current pattern for fast DW propagation along nanowires. Under such conditions, the DW velocity in biaxial wires can be enhanced as much as ten times compared to the velocities achieved in experiments so far. Moreover, the fast variation of spin polarization can help DW depinning. Possible experiment…
A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-polarized carriers through the RTD is accompanied by generation of an in-plane electric current. The microscopic origin of the effects is the spin-orbit coupling-induced splitting of the resonant level.
The combined action of a transverse spin-polarized current and the current-induced Ørsted field on long ferromagnetic nanostripes is studied numerically and analytically. The magnetization behavior is analyzed for stripes with various widths and for all range of the applied current density. It is established that Ørsted field does not destroy periodical magnetization structures induced by the spin-torque, e.g. vortex-antivortex crystal and cross-tie domain walls. However, the action of the Ørsted field disables the saturation state for the strong currents: a stationary state with a single long…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devices, it is necessary to control and manipulate the charge density in these valleys, resulting in valley polarization. While this has been demonstrated using optical excitation, generation of valley polarization in electronic devices without optical excitation remains difficult. Here, we demonstrate spin injection from a ferromagnetic electrode…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls can get very close to each other and affect each others dynamics. In this work we consider two separated domain walls in different layers which interact via an interlayer exchange coupling. One of these walls is moved by a spin-polarized current. Depending on several parameters as the current density, the interlayer coupling or the pinning potential, the com…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via ohmic conduction. For detection a second ferromagnet can be used as drain. We studied submicron lateral spin valve junctions, based on high mobility InAs/AlSb two-dimensional electron gas (2DEG), with Ni, Co and Permalloy as ferromagnetic electrodes. In the standard geometry it is very difficult to separate true spin injection from other effects, including local…
Topological insulators (TIs) are an unusual phase of quantum matter with nontrivial spin-momentum locked topological surface states (TSS). The electrical detection of spin-momentum locking of the TSS in 3D TIs has been lacking till very recently. Many of the results are measured on samples with significant bulk conduction, such as metallic Bi2Se3, where it can be challenging to separate the surface and bulk contribution to the measured spin signal. Here, we report spin potentiometric measurements in thin flakes exfoliated from bulk insulating 3D TI Bi2Te2Se (BTS221) crystals, using two outside…
We investigate two-photon transitions to the electron-hole scattering continuum in monolayer transition-metal dichalcogenides, and identify two contributions to this nonlinear optical process with opposite circularly polarized valley selection rules. In the non-interacting limit, the competition between the two contributions leads to a crossover of the selection rule with the increase of the two-photon energy. With the strong Coulomb interaction between the electron and hole, the two contributions excite electron-hole scattering states in orthogonal angular momentum channels, while the strengt…
Ultrathin ferromagnetic strips with high perpendicular anisotropy have been proposed for the development of memory devices where the information is coded in tiny domains separated by domain walls. The design of practical devices requires creating, manipulating and detecting domain walls in ferromagnetic strips. Recent observations have shown highly efficient current-driven domain wall dynamics in multilayers lacking structural symmetry, where the walls adopt a chiral structure and can be driven at high velocities. However, putting such a device into practice requires the continuous and synchro…
We formulate a model of a semiconductor Quantum Dot laser with injection of spin-polarized electrons. As compared to higher-dimensionality structures, the Quantum-Dot-based active region is known to improve laser properties, including the spin-related ones. The wetting layer, from which carriers are captured into the active region, acts as an intermediate level that strongly influences the lasing operation. The finite capture rate leads to an increase of lasing thresholds, and to saturation of emitted light at higher injection. In spite of these issues, the advantageous threshold reduction, re…
Magnetic skyrmions have been the focus of intense research with promising applications in memory, logic and interconnect technology. Several schemes have been recently proposed and demonstrated to nucleate skyrmions. However, they either result in an uncontrolled skyrmion bubble production or are mostly targeted towards integration with racetrack memory device. In this work, we propose a novel scheme for a controlled single skyrmion nucleation in a confined nanowire geometry with sub-100 nm width using a generalized approach of "localized spin current injection" technique in material systems e…
Realising the promise of next-generation magnetic nanotechnologies is contingent on the development of novel methods for controlling magnetic states at the nanoscale. There is currently demand for simple and flexible techniques to access exotic magnetisation states without convoluted fabrication and application processes. 360 degree domain walls (metastable twists in magnetisation separating two domains with parallel magnetisation) are one such state, which is currently of great interest in data storage and magnonics. Here, we demonstrate a straightforward and powerful process whereby a moving…
The second-order nonlinear optical (NLO) processes, such as the photogalvanic effect and second-order harmonic generation (SHG), play crucial roles in probing and controlling light-matter interactions for energy and device applications. To date, most studies of second-order NLO processes focus on materials with broken spatial inversion symmetry, such as proper ferroelectrics and noncentrosymmetric Weyl semimetals. Nevertheless, inversion symmetry of Shubnikov groups can be broken via spin-ordering in centrosymmetric crystals. Unfortunately, these materials are less common, and their NLO respon…
We theoretically investigate the one-color injection currents and shift currents in zigzag graphene nanoribbons with applying a static electric field across the ribbon, which breaks the inversion symmetry to generate nonzero second order optical responses by dipole interaction. These two types of currents can be separately excited by specific light polarization, circularly polarized lights for injection currents and linearly polarized lights for shift currents. Based on a tight binding model formed by carbon 2p$_z$ orbitals, we numerically calculate the spectra of injection coefficients and sh…
There has been much interest in the injection and detection of spin polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate (STO) single crystals and La-doped STO epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ~100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the STO has a strong temperature depend…
We investigate the electron transport through a two-dimensional semiconductor with a nonuniform Rashba spin-orbit interaction. Due to the combination of the coherence effect and the Rashba interaction, a spontaneous spin-polarized current emerges in the absence of any magnetic material and magnetic field. For a two-terminal device, only the local current contains polarization; however, with a four-terminal setup, a polarized total current is produced. This phenomenon may offer a novel way for generating a spin-polarized current, replacing the traditional spin-injection method.
Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this obstructs their technological performance. In tetragonal ferroelectrics like PbZrxTi1-xO3, for example, the desired functional 180° domain walls within out-of-plane-polarized c-domains are interspersed by in-plane-polarized a-domains and the associated network of domain walls remains challenging to analyze. Here we use a combination of STEM and optical secon…
Monolayer transition metal dichalcogenides have recently become a playground for spin- and valleytronics research. Their low energy spectrum can be described by Dirac cones on the corners of Brillouin zone, but the physical properties are richer than those of graphene since the spin degeneracy is lifted and the optical selection rules are valley dependent. This has been exploited for the optical injection of spin and valley polarized currents by the application of static electric fields. In this paper we consider an all-optical method for the injection of charge, spin and valley polarized curr…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.
Within the scheme of quantum rate equations, we investigate the spin-resolved transport through a double quantum dot system with four ferromagnetic terminals. It is found that the injection efficiency of spin-polarized electrons can be significantly improved compared with single dot case. When the magnetization in one of four ferromagnetic terminals is antiparallel with the other three, the polarization rate of the current through one dot can be greatly enhanced, accompanied by the drastic decrease of the current polarization rate through the other one. The mechanism is the exchange interactio…
We investigate ferrimagnetic domain wall dynamics induced by circularly polarized spin waves theoretically and numerically. We find that the direction of domain wall motion depends on both the circular polarization of spin waves and the sign of net spin density of ferrimagnet. Below the angular momentum compensation point, left- (right-) circularly polarized spin waves push a domain wall towards (away from) the spin-wave source. Above the angular momentum compensation point, on the other hand, the direction of domain wall motion is reversed. This bidirectional motion originates from the fact t…
We study theoretically spin transport through a single-molecule magnet (SMM) in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normalmetallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device ba…
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and detection in germanium nanowires, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering. Using data measured from over 80 samples, we map out the contact resistance window for which lateral spin transport is observed, manifestly showing the conductivity matching required for spin injection. Our analysis, based on the spin dif…
We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge distribution in the semiconductor. When the ferromagnet-semiconductor interface resistance is comparable to the semiconductor resistance, the magnetoresistance ratio of this junction can be greatly enhanced under appropriate doping when the space charge effect in the nonequilibrium transport processes is taken into consideration.
