硅中Fourier定律的破坏与反常热扩散

用于检测碳化硅样品上致命缺陷的相干傅里叶散射测量技术

Coherent Fourier Scatterometry for detection of killer defects on silicon carbide samples

针对SiC晶圆中微小、低对比度或深埋致命缺陷难以由常规光学显微检测的问题，本文提出以CFS作为互补检测手段，并通过SEM验证了结果的高度一致性。

边界条件决定硅中热导率的频率依赖性

Boundary conditions dictate frequency dependence of thermal conductivity in silicon

本研究通过 Al/Si 与 Al/SiO$_2$/Si 的对比实验揭示，界面结构和温度通过调控声子散射及热非平衡，决定硅热导率是否表现出频率依赖性。

Thermal transport from 1D- and 2D-confined nanostructures on silicon probed using coherent extreme UV light: General and predictive model yields new understanding

Heat management is crucial in the design of nanoscale devices as the operating temperature determines their efficiency and lifetime. Past experimental and theoretical works exploring nanoscale heat transport in semiconductors addressed known deviations from Fourier's law modeling by including effective parameters, such as a size-dependent thermal conductivity. However, recent experiments have qualitatively shown new behavior that cannot be modeled in this way. Here, we combine advanced experiment and theory to show that the cooling of 1D- and 2D-confined nanoscale hot spots on silicon can be d…

导热系数计算的平衡和非平衡分子动力学方法的等价性：从体硅到纳米线硅

Equivalence of the equilibrium and the nonequilibrium molecular dynamics methods for thermal conductivity calculations: From bulk to nanowire silicon

分子动力学模拟在研究复杂材料的热输运过程中起着重要的作用。晶格热导率可以在平衡MD（EMD）模拟中使用Green-Kubo公式或在非平衡MD（NEMD）模拟中使用傅立叶定律来计算。这两种方法还没有系统地比较不同尺寸的材料，它们之间的不一致性偶尔在文献中报道。在这里，我们给出了一个深入的比较，他们在三个同素异形体的硅：三维体硅，二维硅烯，和准一维硅纳米线的热输运方面。通过将Green-Kubo公式中的相关时间乘以适当的有效群速度，我们可以将EMD方法中的运行热导率表示为有效长度的函数，并将其与NEMD方法中的长度依赖热导率直接进行比较。我们发现，这两种方法在定量上相互一致的所有系统的研究，牢固地建立其等效计算热导率。

Imaging of bandtail states in silicon heterojunction solar cells

Silicon heterojunction (SHJ) solar cells represent a promising technological approach towards higher photovoltaics efficiencies and lower fabrication cost. While the device physics of SHJ solar cells have been studied extensively in the past, the ways in which nanoscopic electronic processes such as charge-carrier generation, recombination, trapping, and percolation affect SHJ device properties macroscopically have yet to be fully understood. We report the study of atomic scale current percolation at state-of-the-art a-Si:H/c-Si heterojunction solar cells under ambient operating conditions, re…

Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering

Upgraded metallurgical grade (UMG) silicon (Si) has raised interest as an alternative material for solar cells due to its low cost, low environmental impact and low CAPEX. Maximum cell efficiencies at the level of those obtained from high purity poly-Si have been reported. However, a higher defect density and the compensated doping character result in UMG-based cell efficiencies varying over wider ranges in frequency distribution charts. In this report we characterize mc-Si UMG samples with different defect densities, comparing them with mono-Si UMG and commercial high-performance mc-Si sample…