Semiconductor quantum dots coherently driven by pulsed laser are fundamental physical systems which allow studying the dynamical properties of confined quantum states. These systems are attractive candidates for a solid-state qubit, which open the possibility for several investigations in quantum information processing. In this work we study the effects of a specific decoherence process, the spontaneous emission of excitonic states, in a quantum dot molecule. We model our system considering a three-level Hamiltonian and solve the corresponding master equation in the Lindblad form. Our results show that the spontaneous emission associated with the direct exciton helps to build up a robust indirect exciton state. This robustness against decoherence allows potential applications in quantum memories and quantum gate architectures. We further investigate several regimes of physical parameters, showing that this process is easily controlled by tuning of external fields.
In this theoretical manuscript I propose a scheme for entangling a single electron semiconductor spin qubit with a single electron semiconductor charge qubit in a triangular triple quantum dot configuration. Two out of three quantum dots are used to define a single electron semiconductor charge qubit. Furthermore, the spin qubit is embedded in the Zeeman sub-levels of the third quantum dot. Combining single qubit gates with entangling CNOT gates allows one to construct a SWAP gate, and therefore to use the semiconductor spin qubit as a long-lived memory for the semiconductor charge qubit.
Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the DE population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.
Because of their long coherence times and potential for scalability, semiconductor quantum-dot spin qubits hold great promise for quantum information processing. However, maintaining high connectivity between quantum-dot spin qubits, which favor linear arrays with nearest neighbor coupling, presents a challenge for large-scale quantum computing. In this work, we present evidence for long-distance spin-chain-mediated superexchange coupling between electron spin qubits in semiconductor quantum dots. We weakly couple two electron spins to the ends of a two-site spin chain. Depending on the spin s…
We consider a nanostructure consisting of a semiconductor quantum dot coupled to a metal nanoparticle, and show with numerical simulations that the exciton state of the quantum dot can be robustly generated from the ground state even for small interparticle distances, using conventional chirped pulses with Gaussian and hyperbolic secant envelopes. The asymmetry observed in the final exciton population with respect to the chirp sign of the applied pulses is explained using the nonlinear density matrix equations describing the system, and is attributed to the real part of the parameter emerging …
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum dot. We use qubit readout to perform spectroscopy, revealing a dense set of energy levels with characteristic spacing far smaller than the single-particle energy. By comparing with full configuration in…
Time resolved intensity cross-correlation measurements of radiative cascades are used for studying non-radiative relaxation processes of excited carriers confined in semiconductor quantum dots. We spectrally identify indirect radiative cascades which include intermediate phonon assisted relaxations. The energy of the first photon reveals the multicarrier configuration prior to the non-radiative relaxation, while the energy of the second photon reveals the configuration after the relaxation. The intensity cross correlation measurements thus provide quantitative measures of the non-radiative pro…
We propose a two-qubit optically controlled phase gate in quantum dot molecules via adiabatic passage and hole tunneling. Our proposal combines the merits of the current generation of vertically stacked self-assembled InAs quantum dots and adiabatic passage. The simulation shows an implementation of the gate with a fidelity exceeding 0.98.
The future of quantum communication systems and quantum networks heavily rely on the ability to fabricate and coherently control the conversion of photons between different modes based on a solid-state plateform. In this work, we propose and theoretically investigate a scheme to optomechanically control coherent mode conversion of optical photons by utilizing two optically coupled hybrid semiconductor microcavities containing a quantum dot (QD). One of the microcavity is pumped by an external laser and the second cavity is driven by light emitted by the QD that is embedded in the interface sep…
As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibration of virtual gates, a process that previously involved a large amount of user intervention. Moreover, we show that straightforward feedback protocols can be used to simultaneously tune multiple tun…
Measurement-based quantum computing (MBQC) promises natural compatibility with quantum error correcting codes at the cost of a polynomial increase in physical qubits. MBQC proposals have largely focused on photonic systems, where 2-qubit gates are difficult. Semiconductor spin qubits in quantum dots, on the other hand, offer fast 2-qubit gates via the exchange interaction. In exchange-based quantum computing, as with other solid-state qubits, leakage to higher states is a serious problem that must be mitigated. Here, two hybrid measurement-exchange schemes are proposed which quantify the benef…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array and 3 single quantum dot charge sensors. We show reproducible single quantum dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the 9 dot array. The single quantum dot charge sensors have a charge sensitivity of 8.2 x 10^{-4} e/root(Hz) and allow the investigation of real-time charge dynamics. As a demonstrat…
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate $T$ that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot …
Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots (QDs). We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.
