Marcel Drueschler, Benedikt Huber, Stefano Passerini, Bernhard Roling
This paper has been withdrawn by the author since it had been submitted to Journal of Physical Chemistry C.
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Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt$_3$Si and Pt$_2$Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt$_3$Si into Pt$_2$Si occurs as a result of the thermal treatment for 30 minute…
Quantitative knowledge of electron-phonon coupling is important for many applications as well as for the fundamental understanding of nonequilibrium relaxation processes. Time-resolved diffraction provides direct access to this knowledge through its sensitivity to laser-induced lattice dynamics. Here, we present an approach for analyzing time-resolved polycrystalline diffraction data. A two-step routine is used to minimize the number of time-dependent fit parameters. The lattice dynamics are extracted by finding the best fit to the full transient diffraction pattern rather than by analyzing tr…
Understanding melting in metals is a hot topic of present research. This may be accomplished by pumping the system with infrared (IR) laser radiation, and probing it with hard X-rays produced by an X-ray Free-Electron Laser (XFEL). In this work we studied nanostructured polycrystalline thin films of platinum that were illuminated by IR radiation of increasing fluences. We characterized the structural response as well as the nucleation and propagation of the liquid phase as a function of time delay between the IR pump and X-ray probe. We observed partial melting of the samples for IR fluences h…
Electrochemistry experiments have established that the capacitance of electrode-electrolyte interfaces is much larger for good metals such as gold and platinum than for carbon-based materials. Despite the development of elaborate electrode interaction potentials, to date molecular dynamics simulations were not able to capture this effect. Here we show that changing the width of the Gaussian charge distribution used to represent the atomic charges in gold is an effective way to tune its metallicity. Larger Gaussian widths lead to a capacitance of aqueous solutions (pure water and 1 molar NaCl) …
The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex structures and ferroelectric incommensurabilties, which promote emergent physical properties ranging from electric-field-controllable chirality to negative capacitance effects. Here, we study the impact of topologically protected vortices on the domain formation in improper ferroelectric ErMnO3 polycrystals, demonstrating inverted domain scaling behavior compared to classical ferroelectrics. We observe that as the gra…
Electrically Interconnected Platinum Nanonetworks for Flexible Electronics
本文提出在聚酰亚胺衬底上利用 Pt-Ce 合金大气处理制备平均厚度低于 50 nm 的互连铂纳米网络，以替代脆性 ITO；该网络在 1000 次弯曲后仍保持约 2.76 kohm/sq 方块电阻，并呈现类电感响应。
In this paper, impedance spectroscopy study was performed to establish the electrical property and microstructure relations of the as-deposited and post-annealed polycrystalline CCTO films prepared on Pt/Ti/SiO2/Si (100) substrates by pulsed-laser deposition (PLD). Our results demonstrated that the as-deposited polycrystalline CCTO film was made of insulating grain boundaries with semiconducting grains, indicating that the high-dielectric-constant is attributed to the barrier layer capacitor (BLC) effects. The simple resistor-capacitor (RC) equivalent circuit and the modified constant phase el…
Digital image correlation of laser-ablated platinum nanoparticles on the surface of a polycrystalline metal (nickel-based superalloy Rene 88DT) was used to obtain the local strain behavior from an in situ scanning electron microscope tensile experiment at room temperature. By fusing this information with crystallographic orientations from EBSD, a subsequent analysis shows that the average maximum shear strain tends to increase with increasing Schmid factor. Additionally, the range of the extreme values for the maximum shear strain also increases closer to the grain boundary, signifying that gr…
The charge transport mechanism and the macroscopic dielectric constant in polycrystalline device materials commonly exhibit several components such as electrode-sample interface, grain boundary and bulk contributions. In order to gain precise understanding of the functionality of polycrystalline electroceramic device materials it is essential to deconvolute these contributions. The paradigm of functional thermistor ceramics based on thick film spinel manganates has been studied by temperature dependent alternating current impedance spectroscopy. Three typical relaxation phenomena were detected…
The low temperature (2-24 K) thermal expansion of pure (single crystal and polycrystalline) C60 and polycrystalline C60 intercalated with He, Ne, Ar, and Kr has been investigated using high-resolution capacitance dilatometer. The investigation of the time dependence of the sample length variations on heating shows that the thermal expansion is determined by the sum of positive and negative contributions, which have different relaxation times. The negative thermal expansion usually prevails at helium temperatures. The positive expansion is connected with the phonon thermalization of the system.…
Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission…
The polycrystalline samples of LaGa1-xMnxO3 (0<x<0.3) has been prepared by solid state reaction route. The phase purity of these samples has been confirmed by powder x-ray diffraction experiments carried out on BL-12 at Indus-2 synchrotron radiation source. The sample with x=0.2 shows significant change in the value of capacitance with the application of magnetic field. The observed results were understood by systematically analyzing magneto-capacitance (MC), magneto resistance (MR) and dielectric loss as a function of frequency. Our results and analysis suggests that the observed magneto diel…
Revisiting the Electrified Pt(111)/Water Interfaces through an Affordable Double-Reference ab-initio Approach
本文提出结合混合隐式/显式溶剂化模型的经济GC-DFT方法，用于重新研究带电Pt(111)-水界面，准确复现电容并揭示水分子取向与氢吸附的关键作用。
Nanoscale surface morphology controls charge storage at stepped Pt-water interfaces
本研究采用从头算分子动力学模拟台阶状Pt-水界面，发现台阶边缘积累正电荷且对电容无贡献，而平坦台面水化学吸附主导PZC附近电容，揭示了纳米形貌控制电荷存储机制并解释了PZC随台阶密度偏移现象。
The synthesis of transition metal dichalcogenides (TMDs) has been a primary focus for 2D nanomaterial research over the last 10 years, however, only a small fraction of this research has been concentrated on transition metal ditellurides. In particular, nanoscale platinum ditelluride (PtTe2) has rarely been investigated, despite its potential applications in catalysis, photonics and spintronics. Of the reports published, the majority examine mechanically-exfoliated flakes from chemical vapor transport (CVT) grown crystals. While this production method is ideal for fundamental studies, it is ve…
The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation mechanisms remain a central topic of debate. In this work, we report steep slope switching in MoS$_2$ transistors back-gated by single-layer polycrystalline PbZr$_{0.35}$Ti$_{0.65}$O$_3$. The devices exhibit current on/off ratios up to 8$\times$10$^6$ within an ultra-low gate voltage window of $V_g$ = $\pm$0.5 V and subthreshold swing (SS) as low as 9.7 mV …
Isotropic spin and inverse spin Hall effect in epitaxial (111)-oriented Pt/Co bilayers
本研究利用多种自旋霍尔和逆自旋霍尔技术，探究了外延(111)取向Co/Pt双层膜中的自旋-电荷转换，发现其面内各向同性，深化了对自旋转换机制的理解。
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