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arXiv 0909.2262cond-mat.mes-hallcond-mat.str-el
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非对称宽量子阱中偶分母1/2和1/4填充分数量子霍尔效应的观测

Observation of fractional quantum Hall effect at even-denominator 1/2 and 1/4 fillings in asymmetric wide quantum wells

J. Shabani, T. Gokmen, Y. T. Chiu, M. Shayegan

摘要:

本文报道了在具有显著$asymmetric$电荷分布的宽GaAs量子阱中的电子系统中,在朗道能级填充因子$ν= 1/2$和1/4处观察到分数量子霍尔态的发展。非常大的电子子带分离和高度不对称的电荷分布,我们观察到这些量子霍尔态,连同事实上,他们消失时,电荷分布是对称的,这表明这些是一个组件的状态,可能描述的摩尔-里德普夫朗波函数。

英文摘要:

We report the observation of developing fractional quantum Hall states at Landau level filling factors $ν= 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they disappear when the charge distribution is made symmetric, suggest that these are one-component states, possibly described by the Moore-Read Pfaffian wavefunction.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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