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arXiv 0905.0032cond-mat.mes-hallcond-mat.other
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低填充宽量子阱中电子的关联态:电荷分布对称性的作用

Correlated States of Electrons in Wide Quantum Wells at Low Fillings: The Role of Charge Distribution Symmetry

J. Shabani, T. Gokmen, M. Shayegan

摘要:

对57 nm宽GaAs量子阱中电子的磁输运测量表明,低朗道能级填充($ν$)的相关电子态对电子电荷分布的对称性有显著的依赖性.在密度为$1.93 \times 10^{11}$ cm $^{-2}$时,当分布对称时,在填充$ν= 1/4$的偶数分母处观察到发展的分数量子霍尔态,但是当分布不对称时,分数量子霍尔态迅速消失。在较低的密度下,当我们使电荷分布不对称时,我们观察到围绕$ν= 1/5$分数量子霍尔态的绝缘相的快速增强。

英文摘要:

Magneto-transport measurements on electrons confined to a 57 nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings ($ν$) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of $1.93 \times 10^{11}$ cm$^{-2}$, a developing fractional quantum Hall state is observed at the even-denominator filling $ν= 1/4$ when the distribution is symmetric, but it quickly vanishes when the distribution is made asymmetric. At lower densities, as we make the charge distribution asymmetric, we observe a rapid strengthening of the insulating phases that surround the $ν= 1/5$ fractional quantum Hall state.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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