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arXiv 0909.1628cond-mat.supr-con
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高质量Bi-2223晶体的电输运性质

Electrical transport properties of high quality Bi-2223 crystal

Yu. Eltsev, S. Lee, K. Nakao, S. Tajima

摘要:

研究了高质量Bi_2Sr_2Ca_2Cu_3 O_(10 +x)晶体在超导临界温度以下的电输运性质。在平行于c轴的磁场B中,刚好在电压响应之上,起始电阻与温度数据很好地拟合到涡旋玻璃模型。从涡旋玻璃分析中获得的Bi-2223晶体的熔融转变边界与先前报道的(Bi,Pb)-2223单晶的数据相比向较低温度移动。Bi-2223晶体的临界电流密度,Jc,接近其他地方提出的Bi-2223磁带的Jc值,这表明作为Bi-2223导体的Jc的主要限制因素的Bi-2223的弱本征钉扎性能的主要作用。

英文摘要:

We have studied electrical transport properties of a high quality Bi2Sr2Ca2Cu3O10+x crystal below a superconducting critical temperature, Tc. In magnetic fields B parallel to the c-axis just above a voltage response onset resistance vs temperature data are well fitted to the vortex-glass model. Obtained from the vortex-glass analysis a melting transition boundary for Bi-2223 crystal shifted towards lower temperatures compared to previously reported data for a (Bi,Pb)-2223 single crystal. The critical current density, Jc, of Bi-2223 crystals is close to presented elsewhere Jc values for Bi-2223 tapes suggesting a principal role of weak intrinsic pinning properties of Bi-2223 as a main limiting factor of Jc of Bi-2223 conductors.

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