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arXiv 0908.3042cond-mat.str-elcond-mat.mes-hall
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低维无序金属费米能附近态密度的临界行为

Critical behavior of density of states near Fermi energy in low-dimensional disordered metals

E. Sasioglu, S. Caliskan, M. Kumru

摘要:

利用有限温度常规杂质图技术研究了电子-电子相互作用对低维无序金属在费米能级附近的单粒子态密度(\emph{DOS})$ρ^{(d)}(ε,T)$的影响.我们只考虑扩散极限,通过Dyson方程对最奇异的一阶自能修正进行几何求和,得到了低能量下\emph{DOS}的非发散解,而对于高能量,则恢复了著名的Altshuler-Aronov修正.在费米能级$ρ^{(d)}(ε,T=0)\to 0$处,这表明相互作用的二维和准一维无序系统在零温度下处于绝缘态。所得结果与最近的二维GaAs/AlGaAs异质结和准一维掺杂多壁碳纳米管的隧穿实验符合得很好。

英文摘要:

We study the effect of electron-electron interaction on the one-particle density of states (\emph{DOS}) $ρ^{(d)}(ε,T)$ of low-dimensional disordered metals near Fermi energy within the framework of the finite temperature conventional impurity diagram technique. We consider only diffusive limit and by a geometric re-summation of the most singular first order self-energy corrections via the Dyson equation we obtain a non-divergent solution for the \emph{DOS} at low energies, while for higher energies the well-known Altshuler-Aronov corrections are recovered. At the Fermi level $ρ^{(d)}(ε,T=0)\to 0$, this indicates that interacting disordered two- and quasi-one-dimensional systems are in insulating state at zero temperature. The obtained results are in good agreement with recent tunneling experiments on two-dimensional GaAs/AlGaAs heterostructures and quasi-one-dimensional doped multiwall carbon nanotubes.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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