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arXiv 0908.2831cond-mat.mes-hallcond-mat.mtrl-sci
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双层石墨烯中的静电约束量子环

Electrostatically confined Quantum Rings in bilayer Graphene

M. Zarenia, J. M. Pereira, F. M. Peeters, G. A. Farias

摘要:

我们提出了一个新的系统,其中电子和空穴态被静电限制在双层石墨烯的量子环中。这些结构可以通过使用纳米结构栅极或通过位置依赖性掺杂来调节石墨烯双层的间隙来创建。能级具有磁场($B_{0}$)依赖性,这与通常的半导体量子环截然不同。特别是,本征值是不是不变的下一个$B_0 \to -B_0$变换,并为一个固定的总角动量指数$m$,其字段的依赖性是不是抛物线,但显示两个极小分开的鞍点。光谱还显示几个反交叉,这是由于门限制和磁限制状态的重叠。

英文摘要:

We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by position-dependent doping. The energy levels have a magnetic field ($B_{0}$) dependence that is strikingly distinct from that of usual semiconductor quantum rings. In particular, the eigenvalues are not invariant under a $B_0 \to -B_0$ transformation and, for a fixed total angular momentum index $m$, their field dependence is not parabolic, but displays two minima separated by a saddle point. The spectra also display several anti-crossings, which arise due to the overlap of gate-confined and magnetically-confined states.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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