High-quality superconducting LaFeAsO$_{1-x}$F$_{x}$ thin films were grown on single crystalline LaAlO$_{3}$ substrates with critical temperatures (onset) up to 28 K. Resistive measurements in high magnetic fields up to 40 T reveal a paramagnetically limited upper critical field, $μ_{0}H_{c2}$(0) around 77 T and a remarkable steep slope of -7.5 T/K near $T_{c}$. From transport measurements we observed a weak link behavior in low magnetic fields and the evidence for a broad reversible regime.
Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial relation (001)[100] parallel to (001)[100] and a FWHM value of 1deg. Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc90 of 25K with a high residual resistive ratio of 6.8. The applied preparation technique, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post annealin…
We report conventional and time-resolved infrared spectroscopy on LaFeAsO$_{1-x}$F$_x$ superconducting thin films. The far-infrared transmission can be quantitatively explained by a two-component model including a conventional s-wave superconducting term and a Drude term, suggesting at least one carrier system has a full superconducting gap. Photo-induced studies of excess quasiparticle dynamics reveal a nanosecond effective recombination time and temperature dependence that agree with a recombination bottleneck in the presence of a full gap. The two experiments provide consistent evidence of …
Epitaxial thin films of LaFeAsO were fabricated on MgO (001) and mixed-perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed laser deposition using a Nd:YAG second harmonic source and a 10 at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K, and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at ~0.2 eV, which is explained by ab-initio calculations.
LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and post annealing of the films yield nearly phase pure films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and onset of superconductivity at 11 K. Hc2(T) was determined by resistive measurements and yield Hc2 values of 3 T at 3.6 K for B||c and 6 T at 6.4 K for B||ab.
First experiments on the growth of oxypnictide F-doped LaFeAsO thin films indicated an incomplete normal-to-superconducting transition and offered a work programme challenging to overcome possible difficulties in their fabrication. In this regard the possibility of an all in-situ epitaxial growth appeared to be a matter of time and growth parameters. The following review clarifies that F-doped oxypnictide thin films are extremely difficult to grow by in-situ PLD due to the formation of very stable impurity phases such as oxyfluorides (LaOF) and oxides (La2O3) and the loss of stoichiometry poss…
The recently discovered high temperature superconductor F-doped LaFeAsO and related compounds represent a new class of superconductors with the highest transition temperature (Tc) apart from the cuprates. The studies ongoing worldwide are revealing that these Fe-based superconductors are forming a unique class of materials that are interesting from the viewpoint of applications. To exploit the high potential of the Fe-based superconductors for device applications, it is indispensable to establish a process that enables the growth of high quality thin films. Efforts of thin film preparation sta…
The normal state resistivity of high temperature superconductors can be probed in the region below Tc by suppressing the superconducting state in high magnetic fields. Here we present the normal state properties of YBa2Cu3Ox thin films in the underdoped regime and the normal state resistance of La2-xSrxCuO4 thin films under epitaxial strain, measured below Tc by applying pulsed fields up to 60 T. A universal rho(T) behaviour is reported. We interpret these data in terms of the recently proposed 1D quantum transport model with the 1D paths corresponding to the charge stripes.
We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have p…
This review article describes the developments over the last 30 months in the thin film growth and junction fabrication of superconducting MgB2, including a brief summary the chemistry and physics of MgB2.
Superconducting MgB2 thin films were prepared on Al2O3(0001) and MgO(100) substrates. Boron thin films were deposited by the electron-beam evaporation followed by post-annealing process with magnesium. Proper post annealing conditions were investigated to grow good superconducting MgB2 thin films. The X-ray diffraction patterns showed randomly orientated growth of MgB2 phase in our thin films. The surface morphology was examined by scanning electron microscope (SEM) and atomic force microscope (AFM). Critical current density (Jc) measured by transport method was about 10^7 A/cm^2 at 15 K, and …
The presumably unconventional superconductor Beta-FeSe was deposited by radio frequency sputtering and molecular beam epitaxy (MBE) from two elementary sources. Superconducting thin films were grown in (001)-orientation on MgO(100) and YAlO3(010) substrates. The morphology of the samples was studied and directly related to the superconducting properties of the Beta-FeSe thin films. The MBE grown thin films show microcracks down to the substrate and a roughness of about 100~nm. In contrast, sputter deposited superconducting thin films show a smooth surface with almost no precipitates. In both c…
New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. A method of calculating the distribution of injected currents is proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width $W$ is assumed small relative to $Λ=2λ^2/d$, $λ$ is the bulk London penetration depth of the film material, $d$ is the film thickness.
Precursor MgB2 thin films were prepared on sapphire substrates by magnetron sputtering. Influence of ex-situ annealing process on superconducting MgB2 thin films roughness is discussed. Optimized annealing process of MgB precursor thin films in vacuum results in smooth superconducting MgB2 thin films with roughness below 10 nm, critical temperature Tcon = 31 K and transition width DTc less than 1 K. Nano-bridges based on the superconducting MgB2 thin films using optical and Focused Ion Beam lithography were prepared. Critical current density jc (4.2 K) measured on 50 nm wide strip was 7.3x106 …
Superconducting MgB2 thin films were fabricated on Al2O3(0001) substrates under an ex-situ processing conditions. Boron thin films were deposited by pulsed laser deposition followed by a post-annealing process. Resistance measurements of the deposited MgB2 films show Tc of about 39K, while scanning electron microscopy and x-ray diffraction analysis indicate that the films consist of well-crystallized grains with a highly c-axis-oriented structure.
The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectroscopy was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the fil…
Harmonic analysis of the temperature dependence of the nonlinear ac susceptibility of Nb thin film gives excellent agreement with the susceptibility calculated on basis of model of the hysteretic critical state in 2D disk.
We have fabricated thin films of FeTe$_{1-x}$Se$_x$ using a scotch-tape method. The superconductivities of the thin films are different from each other although these films were fabricated from the same bulk sample. The result clearly presents the inhomogeneous superconductivity in FeTe$_{1-x}$Se$_x$. The difference comes from inhomogeneity due to the excess Fe concentration. The resistivity of a thin film with low excess Fe shows good superconductivity with the sharp superconducting-transition width and more isotropic superconductivity.
Scanning tunneling spectroscopy measurements of superconducting thin lanthanum films grown on a normal metal tungsten substrate reveal an extraordinarily large broadening of the coherence peaks. The observed broadening corresponds to very short electron-like quasiparticle lifetimes in the tunneling process. A thorough analysis considering the different relaxation processes reveals that the dominant mechanism is an efficient quasiparticle relaxation at the interface between the superconducting film and the underlying substrate. This process is of general relevance to scanning tunneling spectros…
FeSe0.5Te0.5 thin films with PbO-type structure are successfully grown on MgO(100) and LaSrAlO4(001) substrates from FeSe0.5Te0.5 or FeSe0.5Te0.75 polycrystalline targets by pulsed-laser deposition. The film deposited on the MgO substrate (film thickness ~ 55 nm) shows superconductivity at 10.6 K (onset) and 9.2 K (zero resistivity). On the other hand, the film deposited on the LaSrAlO4 substrate (film thickness ~ 250 nm) exhibits superconductivity at 5.4 K (onset) and 2.7 K (zero resistivity). This suggests the strong influence of substrate materials and/or the c-axis length to superconductin…
FeSe$_{1-x}$Te$_{x}$ thin films with PbO-type structure are successfully grown on MgO(100) and LaSrAlO$_{4}$(001) substrates from FeSe$_{1-x}$Te$_{x+d}$ polycrystalline targets by pulsed-laser deposition. The film deposited on the MgO substrate (film thickness $\sim$ 63 nm) shows superconductivity at 6.7 K (onset) and 5.5 K (zero resistivity). On the other hand, the film deposited on the LaSrAlO$_{4}$ substrate (film thickness $\sim$ 52 nm) exhibits only the onset of superconducting transition at 2.6 K, but does not show zero resistivity. This indicates the strong influence of epitaxial strain…
The results of experimental investigations of the critical currents and certain nonequilibrium phenomena in thin Sn films of different width w are analyzed. Usually, thin superconducting films are divided into two groups: narrow channels w<lambda and wide films w>lambda. A wide transitional region where the condition w>lambda holds with a large margin and at the same time cannot be explained from the standpoint of the theory of the appearance of a vortex state has been found. This shows that the generally accepted criterion w \sim lambda for dividing films into wide and narrow does not work. T…
We report robust vortex matching effects in antidot arrays fabricated on thin films of NbN. The near absence of hysteresis between field sweep directions indicates a negligible residual pinning in the host thin film. Owing to the very small coherence length of NbN thin films ($ξ< 5 nm$), the observations suggests the possibility of probing physics of vortices at true nanometer length scales in suitably fabricated structures.
Thin films of MgB2 superconductor were prepared by three different procedures on sapphire and silicon substrates. Boron thin films, ex-situ annealed in magnesium vapour, resulted in textured polycrystalline films with crystal dimensions below about 1000 nm, onset critical temperature Tcon near 39 K and width of phase transition about 1 K. Both, ex-situ and in-situ annealed co-deposited boron and magnesium thin films on sapphire and silicon substrates give smooth nanocrystalline films. DC properties of nanocrystalline MgB2 films co-deposited on silicon substrate reached Tcon = 33 K and zero res…
A possible scenario for electric-field induced critical current enhancement in screw dislocated YBCO thin films is proposed based on the converse piezoelectric effect originated from a heavily defected medium of the superconducting films in an applied electric field. The magnitude of the effect is found to depend concurrently on the film thickness and the number of dislocations inside a superconductor.
We present the use of a commercially available fixed-angle multi-wavelength ellipsometer for quickly measuring the thickness of NbN thin films for the fabrication and performance improvement of superconducting nanowire single photon detectors. The process can determine the optical constants of absorbing thin films, removing the need for inaccurate approximations. The tool can be used to observe oxidation growth and allows thickness measurements to be integrated into the characterization of various fabrication processes.
The discovery of superconductivity in infinite-layer nickelates has attracted much attention due to their association to the high-$T_c$ cuprates. Cuprate superconductivity was first demonstrated in bulk samples and subsequently in thin films. In the nickelates, however, the situation has been reversed: although surging as a bulk phenomenon, nickelate superconductivity has only been reported in thin films so far. At the same time, the specifics of infinite-layer nickelates yield distinct interface and surface effects that determine their bulk vs thin-film behavior. In this paper, we provide an …
We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metalinsulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2IrO4. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting ph…
