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arXiv 0905.1346cond-mat.mtrl-sci
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缺陷形成的石墨烯导电工程

Conductivity engineering of graphene by defect formation

S. H. M. Jafri, Karel Carva, Erika Widenkvist, Tobias Blom, Biplab Sanyal, Jonas Fransson, Olle Eriksson, Ulf Jansson, Helena Grennberg, Olof Karis, R. Quinlan,… 展开作者

S. H. M. Jafri, Karel Carva, Erika Widenkvist, Tobias Blom, Biplab Sanyal, Jonas Fransson, Olle Eriksson, Ulf Jansson, Helena Grennberg, Olof Karis, R. Quinlan, B. C. Holloway, Klaus leifer

摘要:

输运测量揭示了石墨烯的几种奇异的电子性质。从电子学应用的角度来看,通过吸附或掺杂吸附原子来影响电子结构并因此控制电导率的可能性是至关重要的。在这里,我们表明,与预期相反,石墨烯的导电性随着空位缺陷浓度的增加而增加,超过一个数量级。通过量子力学输运计算和碳纳米片的实验研究,我们获得了插入缺陷后电导率的显著增强。我们的发现归因于缺陷诱导的中间带隙态,它在空位缺陷周围产生了一个表现出金属行为的区域。通过实施稳定缺陷来改变石墨烯的导电性对于在基于石墨烯的电子器件中产生电子结至关重要。

英文摘要:

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of electronics applications. Here, we show that in contrast to expectation, the conductivity of graphene increases with increasing concentration of vacancy defects, by more than one order of magnitude. We obtain a pronounced enhancement of the conductivity after insertion of defects by both quantum mechanical transport calculations as well as experimental studies of carbon nano-sheets. Our finding is attributed to the defect induced mid-gap states, which create a region exhibiting metallic behavior around the vacancy defects. The modification of the conductivity of graphene by the implementation of stable defects is crucial for the creation of electronic junctions in graphene-based electronics devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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