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arXiv 0904.0948cond-mat.mes-hallcond-mat.mtrl-sci
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石墨烯零朗道能级的能隙开口

Gap opening in the zeroth Landau level of graphene

A. J. M. Giesbers, L. A. Ponomarenko, K. S. Novoselov, A. K. Geim, M. I. Katsnelson, J. C. Maan, U. Zeitler

摘要:

我们已经测量到低温电阻率$ρ_{xx}$的强烈增加和霍尔电导率$σ_{xy}$在电荷中性点处的零值平台,在石墨烯中经受高达30 T的高磁场。我们解释了我们的结果由一个简单的模型,涉及到一个字段依赖分裂的最低朗道水平的顺序的几个开尔文,从激活运输测量提取。该模型再现了$ρ_{xx}$的增加和异常$ν=0$平台在$σ_{xy}$在共存的电子和空穴在同一自旋分裂零能量朗道水平。

英文摘要:

We have measured a strong increase of the low-temperature resistivity $ρ_{xx}$ and a zero-value plateau in the Hall conductivity $σ_{xy}$ at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in $ρ_{xx}$ and the anomalous $ν=0$ plateau in $σ_{xy}$ in terms of coexisting electrons and holes in the same spin-split zero-energy Landau level.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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