We treat the problem of diffusion of solute atoms around screw dislocations. In particular, we express and solve the diffusion equation, in radial symmetry, in an elastic field of a screw dislocation subject to the flux conservation boundary condition at the interface of a new phase. We consider an incoherent second-phase precipitate growing under the action of the stress field of a screw dislocation. The second-phase growth rate as a function of the supersaturation and a strain energy parameter is evaluated in spatial dimensions d=2 and d=3. Our calculations show that an increase in the amplitude of dislocation force, e.g. the magnitude of the Burgers vector, enhances the second-phase growth in an alloy. Moreover, a relationship linking the supersaturation to the precipitate size in the presence of the elastic field of dislocation is calculated.
Dislocation climb mobilities, assuming vacancy bulk diffusion, are derived and implemented in dislocation dynamics simulations to study the coarsening of vacancy prismatic loops in fcc metals. When loops cannot glide, the comparison of the simulations with a coarsening model based on the line tension approximation shows a good agreement. Dislocation dynamics simulations with both glide and climb are then performed. Allowing for glide of the loops along their prismatic cylinders leads to faster coarsening kinetics, as direct coalescence of the loops is now possible.
We study three structurally different states of nanocrystalline 316 steel and show that the state, where boundaries containing excess concentration of alloying elements are combined with mobile dislocations in grain interiors, allows maintaining extraordinarily high strength and remarkably enhanced plasticity. Underlying mechanisms featuring interaction between the segregations and mobile dislocations are discussed.
Three-dimensional discrete dislocation dynamics simulations are used to study strain-controlled plastic deformation of face-centered cubic aluminium single crystals. After describing the rate and size dependence of the average stress-strain curves, we study the power-law distributed strain bursts and the average avalanche shapes, and find a universal power-law exponent $τ\approx 1.0$ for all imposed strain rates and system sizes, characterizing both the event sizes and their durations. We discuss the dependence of our results on loading rate and compare these with previous studies of strain-co…
Simulation of subgrain growth during recovery is carried out using two-dimensional discrete dislocation dynamics on a hexagonal crystal lattice having three symmetric slip planes. To account for elevated temperature (i) dislocation climb was allowed and (ii) a Langevin type thermal noise was added to the force acting on the dislocations. During the simulation, a random ensemble of dislocations develop into subgrains and power-law type growth kinetics are observed. The growth exponent is found to be independent of the climb mobility, but dependent on the temperature introduced by the thermal no…
The self-organized growth of Co nanoparticles with 10 nm periodicity was achieved at room temperature on a Ag(001) surface patterned by an underlying dislocation network, as shown by real time, in situ Grazing Incidence Small and Wide Angle X-ray Scattering. The misfit dislocation network, buried at the interface between a 5nm-thick Ag thin film and a MgO(001) substrate, induces a periodic strain field on top of the surface. Nucleation and growth of Co on tensile areas are found as the most favorable sites as highlighted by Molecular Dynamic simulations.
We determine the critical layer thickness for the appearance of misfit dislocations as a function of the misfit between the lattice constants of the substrate and the adsorbate from Kinetic Monte Carlo (KMC) simulations of heteroepitaxial growth. To this end, an algorithm is introduced which allows the off-lattice simulation of various phenomena observed in heteroepitaxial growth including critical layer thickness for the appearance of misfit dislocations, or self-assembled island formation. The only parameters of the model are deposition flux, temperature and a pairwise interaction potential …
Atomic level defects such as dislocations play key roles in determining the macroscopic properties of crystalline materials. Their effects are important and wide-reaching, and range from increased chemical reactivity to enhanced mechanical properties to vastly increased rates of crystal growth. Dislocations have therefore been widely studied using traditional techniques such as X-ray diffraction (XRD) and optical imaging. More recently, advances in microscopy have allowed their direct visualization. Atomic force microscopy (AFM) has enabled the 2D study of single dislocations while transmissio…
A generalized model to study dislocation loops growth in irradiated binary Zr-based alloys is presented. It takes into account temperature effects, efficiencies of loops to absorb point defects dependent on the loop size, an influence of locality of grain boundary sink strength, and concentration of the alloying element. This model is used to describe the dynamics of loop radii growth in zirconium-niobium alloys under neutron irradiation at reactor conditions. A growth of both loop radii and strains is studied at different grain sizes, location from grain boundaries, and concentration of niobi…
We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between which we establish in a controlled manner a twist and a tilt around a k110l direction. For large enough twists, the DN consists of a twodimensional network of screw dislocations accommodating mainly the twist and of a one-dimensional network of mixed dislocations accommodating mainly the tilt. We show that in addition the mixed dislocations accommodate part of the twist and we observe and explain slight unexpected di…
We study strain-controlled plastic deformation of crystalline solids via two-dimensional discrete dislocation dynamics simulations. To this end, we characterize the average stress-strain curves as well as the statistical properties of strain bursts and the related stress drops as a function of the imposed strain rate and the stiffness of the specimen-machine system. The dislocation system exhibits strain rate sensitivity such that a larger imposed strain rate results in a higher average stress at a given strain. In the limit of small strain rate and driving spring stiffness, the sizes and dura…
Two-dimensional (2D) layered materials hosting dislocations have attracted considerable research attention in recent years. In particular, screw dislocations can result in a spiral topology and an interlayer twist in the layered materials, significantly impacting the stacking order and symmetry of the layers. Moreover, the dislocations with large strain and heavily distorted atomic registry can result in a local modification of the structures around the dislocation. The dislocations thus provide a useful route to engineering optical, electrical, thermal, mechanical and catalytic properties of …
Production rates in long-term predictive radiation damage accumulation models are generally considered independent of the material's microstructure for reactor components. In this study, the effect of pre-existing microstructural elements on primary damage production in alpha-Zr -- and vice-versa -- is assessed by molecular dynamics (MD) simulations. a-type dislocation loops, c-component dislocation loops and a tilt grain boundary (GB) were considered. Primary damage production is reduced in the presence of all these microstructural elements, and clustering behavior is dependent on the microst…
Hydrogen atoms absorbed by metals in the hydrogen-containing environments can lead to the premature fracture of the metal components used in load-bearing conditions. Since metals used in practice are mostly polycrystalline, grain boundaries (GBs) can play an important role in hydrogen embrittlement of metals. Here we show that the reaction of GB with lattice dislocations is a key component in hydrogen embrittlement mechanism for polycrystalline metals. We use atomistic modeling methods to investigate the mechanical response of GBs in alpha-iron with various hydrogen concentrations. Analysis in…
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure wurtzite crystal structure. Then, we developed a two-step growth procedure to enhance the yield of vertical InAs-on-GaAs nanowires. We achieved 90% of straight InAs-on-GaAs nanowires by further optimizing the growth parameters. We investigated the composition change at the interface by energy dispersive X-ray spectroscopy and the nanowire crystal structure by tra…
Enhanced Elevated-Temperature Strength in Refractory Complex Concentrated Alloys via Temperature-Induced Transition from Screw-to-Edge Dislocation Control
University of California, Davis（加州大学戴维斯分校）；Oak Ridge National Laboratory（橡树岭国家实验室）；University of Tennessee, Knoxville（田纳西大学诺克斯维尔分校）
Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semiconductors (Si)GeSn. In addition to its importance for emerging photonic and optoelectronic applications, this class of materials is also a rich platform to highlight the interplay between kinetics and thermodynamic driving forces during growth of strained, nonequilibrium alloys. Indeed, these alloys are inherently strained and supersaturated in Sn and thus can suffer instabilities that are still to be fully elucidated. I…
Two-dimensional (2D) layered tungsten diselenides (WSe2) material has recently drawn a lot of attention due to its unique optoelectronic properties and ambipolar transport behavior. However, direct chemical vapor deposition (CVD) synthesis of 2D WSe2 is not as straightforward as other 2D materials due to the low reactivity between reactants in WSe2 synthesis. In addition, the growth mechanism of WSe2 in such CVD process remains unclear. Here we report the observation of a screw-dislocation-driven (SDD) spiral growth of 2D WSe2 flakes and pyramid-like structures using a sulfur-assisted CVD meth…
The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl2O4 layers have been grown between Al2O3 and MgO, and the atomic structure of Al2O3/MgAl2O4 interfaces at different growth stages was characterized using aberration-corrected scanning transmission electron microscopy. The oxygen sublattice transforms from hexagonal close-packed (hcp) stacking in Al2O3 to cubic close-packed (ccp) stacking in MgAl…
Plasticity in zirconium alloys is mainly controlled by the interaction of 1/3 1210 screw dislocations with oxygen atoms in interstitial octahedral sites of the hexagonal close-packed lattice. This process is studied here using ab initio calculations based on the density functional theory. The atomic simulations show that a strong repulsion exists only when the O atoms lie in the dislocation core and belong to the prismatic dislocation habit plane. This is a consequence of the destruction of the octahedral sites by the stacking fault arising from the dislocation dissociation. Because of the rep…
The mechanisms of stability or instability in the strained alloy film growth are of intense current interest to both theorists and experimentalists. We consider dislocation-free, coherent, growing alloy films which could exhibit a morphological instability without nucleation. We investigate such strained films by developing a nonequilibrium, continuum model and by performing a linear stability analysis. The couplings of film-substrate misfit strain, compositional stress, deposition rate, and growth temperature determine the stability of film morphology as well as the surface spinodal decomposi…
Graphite is the thermodynamically stable form of carbon, and yet is remarkably difficult to synthesise. A key step in graphite formation is the removal of defects at high temperature ($>$2300~$^{\circ}$C) that allow graphenic fragments to rearrange into ordered crystallites. We find the critical defect controlling graphitisation is a screw dislocation that winds through the layers like a spiral staircase, inhibiting lateral growth of the graphenic crystallites ($L_a$) and preventing AB stacking of Bernal graphite. High-resolution transmission electron microscopy (HRTEM) identifies screws as in…
Plasticity in zirconium is controlled by 1/3<1-210> screw dislocations gliding in the prism planes of the hexagonal close-packed structure. This prismatic and not basal glide is observed for a given set of transition metals like zirconium and is known to be related to the number of valence electrons in the d band. We use ab initio calculations based on the density functional theory to study the core structure of screw dislocations in zirconium. Dislocations are found to dissociate in the prism plane in two partial dislocations, each with a pure screw character. Ab initio calculations also show…
A detailed study of the precipitation of the γ' (AlAg2) phase in undeformed aluminium-silver alloys has been conducted. Several previously unreported features were observed, including the formation of discrete three-dimensional assemblies comprised of 5-7 precipitates on faulted dislocation loops. The precipitates assemblies adopted a morphology approximating a tetrahedral bipyramidal assembly. The bounding defect of the stacking fault was found to control both the nucleation of additional precipitates which was responsible for the formation of the assembly structure and also the growth charac…
Ferroelectric switching at edge dislocations in BaTiO$_3$ modelled at the atomic scale
Interdisciplinary Centre for Advanced Materials Simulation (ICAMS), Ruhr-University Bochum（波鸿鲁尔大学先进材料模拟跨学科中心）；Center for Interface-Dominated High Performance Materials (ZGH), Ruhr-University Bochum（波鸿鲁尔大学界面主导高性能材料中心）；Faculty of Physics and Astronomy, Ruhr-University Bochum（波鸿鲁尔大学物理与天文学系）；Univ. Lille, CNRS, INRAE, Centrale Lille, UMR 8207 - UMET - Unité Matériaux et Transformations（里尔大学、法国国家科学研究中心、法国国家农业食品与环境研究院、里尔中央理工学院、UMR 8207 材料与转化单元）
We explore the Bi-surfactant-directed self-assembly and structure of InAs quantum dots grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi flux during InAs deposition changes the InAs growth mode from two-dimensional (2D) Frank-van der Merwe to Stranski-Krastanov, resulting in the formation of three-dimensional (3D) InAs islands on the surface. Furthermore, exposing static InAs 2D layers to Bi induces a rearrangement of the strained layer into 3D islands. We explore the effect of varying the InAs thickness and Bi flux for these two growth approaches, observing a critical thickne…
Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2 V^-1 s^-1 at room temperature and 400 cm^2 V^-1 s^-1 at 10 K, despite the high concentration (1.2x10^11 cm^-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden Popper crystallographic shear faults. This suggests that in addition to threading dislocations that other defects possibly…
Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations is usually achieved via strain fields, applied either during growth [9,10] or retrospectively via deformation, e.g., (nano [11-14])-indentation [15]. Here we show how partial dislocations can be induc…
A possible mechanism for the formation of a 90° misfit dislocation at the Ge/Si(001) interface through homogeneous nucleation is identified from atomic scale calculations where a minimum energy path connecting the coherent epitaxial state and a final state with a 90° misfit dislocation is found using the nudged elastic band method. The initial path is generated using a repulsive bias activation procedure in a model system including 75000 atoms. The energy along the path exhibits two maxima in the energy. The first maximum occurs as a 60° dislocation nucleates. The intermediate minimum correspo…
Interactions among dislocations and solute atoms are the basis of several important processes in metals plasticity. In body-centered cubic (bcc) metals and alloys, low-temperature plastic flow is controlled by screw dislocation glide, which is known to take place by the nucleation and sideward relaxation of kink pairs across two consecutive \emph{Peierls} valleys. In alloys, dislocations and solutes affect each other's kinetics via long-range stress field coupling and short-range inelastic interactions. It is known that in certain substitutional bcc alloys a transition from solute softening to…
Understanding the mechanism of martensitic transformation is of great importance in developing advanced high strength steels, especially TRansformation-Induced Plasticity (TRIP) steels. The TRIP effect leads to enhanced work-hardening rate, postponed onset of necking and excellent formability. In-situ transmission electron microscopy has been performed to systematically investigate the dynamic interactions between dislocations and alpha martensite at microscale. Local stress concentrations, e.g. from notches or dislocation pile-ups, render free edges and grain boundaries favorable nucleation s…
A continuum theory based on thermodynamics has been developed for modeling diffusional creep of polycrystalline solids. It consists of a coupled problem of vacancy diffusion and mechanics where the vacancy generation/absorption at grain boundaries is driven by grain boundary dislocations climb. The model is stated in terms of general balance laws and completed by the choice of constitutive equations consistent with classical non-equilibrium thermodynamics. The kinetics of diffusional creep is derived from physically-based mechanisms of climb of dislocations at grain boundaries, thus introducin…
Plasticity in hexagonal close-packed zirconium is controlled by screw dislocations which easily glide in the prismatic planes where they are dissociated. At high enough temperatures, these dislocations can deviate out of the prism planes to also glide in the first order pyramidal and basal planes. To get a better understanding of these secondary slip systems, we have performed molecular dynamics (MD) simulations of a screw dislocation gliding in a basal plane. The gliding dislocation remains dissociated in the prism plane where it performs a random motion and occasionally cross-slips out of it…
Crack advance from short or long pre-cracks is predicted by the progressive failure of a cohesive zone in a strain gradient, elasto-plastic solid. The presence of strain gradients leads to the existence of an elastic zone at the tip of a stationary crack, for both the long crack and the short crack cases. This is in sharp contrast with previous asymptotic analyses of gradient solids, where elastic strains were neglected. The presence of an elastic singularity at the crack tip generates stresses which are sufficiently high to activate quasi-cleavage. For the long crack case, crack growth resist…
A model for gas bubble behavior in irradiated amorphous $U_3Si_2$ is generalized to take into account local influence of sinks for point defects and gas atoms as far as defect clustering resulting in growth of dislocation loops. A universality of bubble size distribution function and scaling law of bubble size growth is revealed. Temperature dependencies of main quantities governing bubble growth are discussed. Local distribution of bubbles and dislocation loops inside grains is studied in details to illustrate bubble size change in the vicinity of grain boundaries and estimate local swelling.…
Dislocation-assisted phase separation processes in binary systems subjected to irradiation effect are studied analytically and numerically. Irradiation is described by athermal atomic mixing in the form of ballistic flux with spatially correlated stochastic contribution. While studying the dynamics of domain size growth we have shown that the dislocation mechanism of phase decomposition delays the ordering processes. It is found that spatial correlations of the ballistic flux noise cause segregation of dislocation cores in the vicinity of interfaces effectively decreasing the interface width. …
Defects play a key role in deciding the mechanisms and kinetics of phase transformations. In this paper, we show how dislocations influence phase separation in alloys with miscibility gap. Specifically, depending on the ratio of pipe mobility to bulk mobility, it is seen that even in a system with nominal compositions outside the spinodal limit, spinodal phase separation is possible. Surprisingly, phase separation through both nucleation and growth, and spinodal decomposition, is seen concurrently (for the case of intersecting dislocations). Finally, the prominent role played by dislocations i…
We study the thermally activated, slow conversion of the hysteretically retained $ω$ phase into stable $α$ phase in recovered samples of shocked zirconium. The $ω$-phase decays in time following an algebraic law, unlike the predictions of the nucleation-growth framework for first order transitions, and residual volume fractions of phases and dislocation densities are related by a power law. We propose an explanation for the annealing mechanism through coupled dynamics of dislocations and phase change. We find that the long-time behavior is controlled by the interplay of dislocations, shear flu…
We investigate the depinning transition occurring in dislocation assemblies. In particular, we consider the cases of regularly spaced pileups and low angle grain boundaries interacting with a disordered stress landscape provided by solute atoms, or by other immobile dislocations present in non-active slip systems. Using linear elasticity, we compute the stress originated by small deformations of these assemblies and the corresponding energy cost in two and three dimensions. Contrary to the case of isolated dislocation lines, which are usually approximated as elastic strings with an effective l…
Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host material, as well as its remarkable chemical stability and optoelectronic properties. We investigate the nature of such single-photon emitters in GaN with a systematic analysis of various samples produced under different growth conditions. We explore the effect that intrinsic structural defects (dislocations and stacking faults), doping and crystal orientation in GaN have on the formation of quantum emitters. We inv…
The time-dependent Ginzburg-Landau (TDGL) equation for a single component non-conservative structural order parameter is used to study the spatio-temporal evolution of a second phase in the vicinity of an edge dislocation in an elastic crystalline solid. A symmetric Landau potential of sixth-order is employed. Dislocation field and elasticity modify the second-order and fourth-order coefficients of the Landau polynomial, respectively, where the former makes the coefficient singular at the origin. The TDGL equation is solved numerically using a finite volume method, where a wide range of parame…
Order strengthening in nickel-based superalloys is associated with the extra stress required for dislocations to bypass the $γ'$ precipitates distributed in the $γ$ matrix. A rich variety of bypass mechanism has been identified, with various shearing and Orowan looping processes giving way to climb bypass as the operating conditions change from the low/intermediate temperatures and high stress regime, to the high temperature and low stress regime. When anti phase boundary (APB) shearing and Orowan looping mechanisms operate, the bypass mechanism changes from shearing to looping with increased …
Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without $α$-Cr$_2$O$_3$ buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of $α$-Ga$_2$O$_3$ and $ε$-Ga$_2$O$_3$ phases with a dislocation density of about $2\cdot10^{10}$ cm$^{-2}$. The insertion of $α$-Ga$_2$O$_3$ buffer layers resulted in phase-pure $α$-Ga$_2$O$_3$ films and a fourfold reduction of the dislocation density to $5 \cdot 10^9$ cm$^{-2}$.
The wetting of the homogeneously strained wetting layer by dislocation-free three-dimensional islands belonging to an array has been studied. The array has been simulated as a chain of islands in 1+1 dimensions. It is found that the wetting depends on the density of the array, the size distribution and the shape of the neighbor islands. Implications for the self-assembly of quantum dots grown in the coherent Stranski-Krastanov mode are discussed.
