在具有$α$ PDMATHAAC O PDMATHAAD缓冲层的蓝宝石衬底上生长刚玉结构的$α$ PDMATHAAC O PDMATHAAD
HVPE growth of corundum-structured $α$-Ga$_2$O$_3$ on sapphire substrates with $α$-Cr$_2$O$_3$ buffer layer
摘要：
采用射频磁控溅射法在（0001）蓝宝石衬底上制备了含和不含$α$ $_2$ O $_3$缓冲层的氧化镓薄膜.在裸蓝宝石衬底上的沉积导致$α$ $_2$ O $_3$和$ε$-Ga $_2$ O $_3$相的混合物，位错密度约为$2\cdot10^{10}$ cm $^{-2}$ . $α$ -Ga $_2$ O $_3$缓冲层的插入导致相位纯的$α$ -Ga $_2$ O $_3$膜和位错密度的四倍减少到$5 \cdot 10^9$ cm $^{-2}$。
英文摘要：
Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without $α$-Cr$_2$O$_3$ buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of $α$-Ga$_2$O$_3$ and $ε$-Ga$_2$O$_3$ phases with a dislocation density of about $2\cdot10^{10}$ cm$^{-2}$. The insertion of $α$-Ga$_2$O$_3$ buffer layers resulted in phase-pure $α$-Ga$_2$O$_3$ films and a fourfold reduction of the dislocation density to $5 \cdot 10^9$ cm$^{-2}$.
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