我们研究了基于PDIF-CN $_{2}$单晶的场效应晶体管的电子迁移率。小分子PDI 8-CN $_{2}$家族已被选择用于气相沉积薄膜FET获得的有希望的结果。我们使用一层PMMA（旋涂在SiO $_{2}$的顶部）作为栅极电介质，以降低氧化物表面存在的羟基捕获电子的可能性。对于这些器件，我们在真空中获得了6 cm $^{2}$ /Vs的室温迁移率，在空气中获得了3 cm $^{2}$ /Vs的室温迁移率。我们的测量结果表明，有可能获得与p型器件的性能相当的n型OFFERS。
英文摘要：
We have investigated the electron mobility on field-effect transistors based on PDIF-CN$_{2}$ single crystals. The family of the small molecules PDI8-CN$_{2}$ has been chosen for the promising results obtained for vapour-deposited thin film FETs. We used as gate dielectric a layer of PMMA (spinned on top of the SiO$_{2}$), to reduce the possibility of electron trapping by hydroxyl groups present at surface of the oxide. For these devices we obtained a room temperature mobility of 6 cm$^{2}$/Vs in vacuum and 3 cm$^{2}$/Vs in air. Our measurements demonstrate the possibility to obtain n-type OFETs with performances comparable to those of p-type devices.
Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
发现未包封的剥离的黑磷（BP）薄片在暴露于环境条件时发生化学降解。原子力显微镜，静电力显微镜，透射电子显微镜，X-射线光电子能谱学，和傅里叶变换红外光谱表征的结构和化学的降解过程中，表明O2饱和H2O不可逆地与BP反应，形成氧化磷物种。这一解释得到了以下观察结果的进一步支持：与亲水性SiO2相比，疏水性十八烷基三氯硅烷自组装单层和H-Si（111）上的BP降解发生得更快。对于未封装的BP场效应晶体管，环境退化导致在环境中6小时后阈值电压大幅增加，随后在48小时后FET电流开/关比和迁移率降低约10^3。原子层沉积的AlOx覆盖层有效地抑制了环境退化，允许封装的BP FET在环境中保持约10^3的高开/关比和约100 cm 2/（V*s）的迁移率超过两周。这项工作表明，BP的环境降解，可以有效地管理时，薄片充分钝化。反过来，我们提高BP环境稳定性的战略将加速BP在电子和光电应用中的实施。
High-Mobility Indium Native Oxide Transistors via Liquid-Metal Printing in Air
The Australian National University（澳大利亚国立大学）；University of New South Wales (UNSW Sydney)（新南威尔士大学）；Australian National Fabrication Facility, Research School of Physics, The Australian National University（澳大利亚国立大学物理研究学院澳大利亚国家制造设施）
Wafer-scale synthesis and transfer of graphene films
我们开发了在环境压力下在Ni和Cu膜上生产晶圆级高质量石墨烯膜的方法，该石墨烯膜大至3英寸晶圆尺寸，并通过金属层的瞬时蚀刻将其转移到任意衬底上。我们还展示了大面积石墨烯薄膜用于批量制造场效应晶体管（FET）阵列和可拉伸应变片的应用，显示出非凡的性能。晶体管显示出在-0.75V的漏极偏压下器件的空穴和电子迁移率分别为1，100cm 2/Vs和550 cm 2/Vs。应变传感器的压阻应变系数为~6.1。这些方法代表了实现晶圆级石墨烯器件以及在光电子学，柔性和可拉伸电子学中的应用的重要一步。
Metal halide perovskites (MHPs) have become a promising candidate in a myriad of applications, such as light-emitting diodes, solar cells, lasing, photodetectors, photocatalysis, transistors, etc. This is related to the synergy of their excellent features, including high photoluminescence quantum yields, narrow and tunable emission, long charge carrier lifetimes, broad absorption spectrum along with high extinction absorptions coefficients, among others. However, the main bottleneck is the poor stability of the MHPs under ambient conditions. This is imposing severe restrictions with respect to…
