Very low bias stress in n-type organic single crystal transistors
Mario Barra, Flavia V. Di Girolamo, Nikolas A. Minder, Ignacio Gutiérrez Lezama, Zhihua Chen, Antonio Facchetti, Alberto F. Morpurgo, Antonio Cassinese
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Submitted to Applied Physics Letters; 14 pages, 3 figures
Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ~1% under vacuum and ~10% in air. This remarkable stability of the devices leads to characteristic time constants, extracted by fitting the data with a stretched exponential - that are τ~ 2\cdot10^9 s in air and τ~ 5\cdot10^9 s in vacuum - approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.
In organic field-effect transistors, the structure of the constituent molecules can be tailored to minimize the disorder experienced by charge carriers. Experiments on two perylene derivatives show that disorder can be suppressed by attaching longer core substituents - thereby reducing potential fluctuations in the transistor channel and increasing the mobility at low temperature - without altering the intrinsic transport properties.
We report on organic field-effect transistors with unprecedented resistance against gate bias stress. The single crystal and thin-film transistors employ the organic gate dielectric Cytop(TM). This fluoropolymer is highly water repellent and shows a remarkable electrical breakdown strength. The single crystal transistors are consistently of very high electrical quality: near zero onset, very steep subthreshold swing (average: 1.3 nF V/(dec cm2)) and negligible current hysteresis. Furthermore, extended gate bias stress only leads to marginal changes in the transfer characteristics. It appears t…
We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in-situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (VG=-15 V) and 5 nm (VG=15 V).
Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations, and, more generally, the intrinsic transport properties of organic semiconductors. These topics are now being investigated through the study of transport in organic transistors realized using molecular single crystals of unprecedented chemical purity and structural quality. These studies are elucidating detailed microscopic aspects of the physics of organic…
High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as 5.0 cm$^2$/Vs. These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and $n$-type organic semico…
We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7V and charge carrier mobility is nearly gate bias independent, ranging from 1cm2/Vs to 1.5 cm2/Vs depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.
A series of solid organic acids were used to p-dope carbon nanotubes. The extent of doping is shown to be dependent on the pKa value of the acids. Highly fluorinated carboxylic acids and sulfonic acids are very effective in shifting the threshold voltage and making carbon nanotube field effect transistors to be more p-type devices. Weaker acids like phosphonic or hydroxamic acids had less effect. The doping of the devices was accompanied by a reduction of the hysteresis in the transfer characteristics. In-solution doping survives standard fabrication processes and renders p-doped carbon nanotu…
We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor and an ultra-thin (<20 nm) and highly insulating single-layer fluoropolymer gate dielectric (Cytop). OFETs with PTCDI-C13 (N,N'-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide) as semiconductor exhibit outstanding transistor characteristics: very low threshold voltage (0.2V), onset at 0V, steep subthreshold swing (0.1-0.2 V/decade), no hysteresis and exce…
We developed a novel method for obtaining the distribution of trapped carriers over their degree of localization in organic transistors, based on the fine analysis of electron spin resonance spectra at low enough temperatures where all carriers are localized. To apply the method to pentacene thin-film transistors, we proved through continuous wave saturation experiments that all carriers are localized at below 50 K. We analyzed the spectra at 20 K and found that the major groups of traps comprise localized states having wave functions spanning around 1.5 and 5 molecules and a continuous distri…
We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematically examine the contact resistivity and intrinsic channel mobility, and show that chemically increasing the injecting electrode work function significantly improves hole injection relative to untreated A…
We report detailed studies of the slow relaxation of the photoinduced excess charge carriers in organic metal-insulator-semiconductor field effect transistors consisting of poly(3-hexylthiophene) as the active layer. The relaxation process cannot be physically explained by processes, which lead to a simple or a stretched-exponential decay behavior. Models based on serial relaxation dynamics due to a hierarchy of systems with increasing spatial separation of the photo-generated negative and positive charges are used to explain the results. In order to explain the observed trend, the model is fu…
A model describing the low density carrier state in an organic single crystal FET with high-$κ$ gate dielectrics is studied. The interplay between charge carrier coupling with inter-molecular vibrations in the bulk of the organic material and the long-range interaction induced at the interface with a polar dielectric is investigated. This interplay is responsible for the stabilization of a polaronic state with an internal structure extending on few lattice sites, at much lower coupling strengths than expected from the polar interaction alone. This effect could give rise to polaron self-trappin…
We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline organic semiconductors. We show that the same relationship between the threshold voltage and the dipole-induced charges in the SAM holds when both types of devices are fabricated on strictly identical base substrates. Charge carrier mobilities, almost constant for amorphous OFET, are not affected by the dipole in the SAMs, while for polycrystalline OFET (pent…
As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon nanotubes (SWNT) can be used as quasi one-dimensional (1D) electrodes to construct organic field effect transistors (FET) with molecular scale width (~2 nm) and channel length (1-3 nm). An important feature owing to the quasi 1D electrode geometry is the favorable gate electrostatics that allows for efficient switching of ultra-short organic channels. This affor…
In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2 substrates. After the T6 film structural analysis by X-Ray diffraction and the FET electrical investigation focused on carrier mobility evaluation, bias stress instability parameters have been estimated and discussed in the context of existing models. By increasing the film thickness, a clear correlation between the stress parameters and the structural properties …
We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. We conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.
A printing process for high-resolution transfer of all components for organic electronic devices on plastic substrates has been developed and demonstrated for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film transistors (TFTs). The nanotransfer printing process allows fabrication of an entire device without exposing any component to incompatible processes and with reduced need for special chemical preparation of transfer or device substrates. Devices on plastic substrates include a Pn TFT with a saturation, field-effect mobility of 0.09 cm^2 (Vs)^-1 and on/off ratio …
The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as a shift of the threshold thickness at which electric current began to flow. The {\it in-situ} and continuous measurement can also determine qualitatively the accumulation layer thickness together with the distribution function of injected carriers. The accumulation layer thickness is a few mono layers, and it does not depend on gate voltages, rather depends…
In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays and other large-area electronics applications. Low-temperature processability, low-cost fabrication and compatibility with arbitrary substrates are some of the promising advantages of OFETs, among others. Of the many organic materials available, pentacene, in particular, is one of the leading candidates for use in current thin-film OFET architectures - this b…
We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap (trap DOS) of small molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited-current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT's), single crystal field-effect transistors (SC-FET's) and…
The surface conductivity is measured by a four-probe technique for pentacene and rubrene single-crystals laminated on polarized and nearly unpolarized molecular monolayers with application of perpendicular electric fields. The polarization of the self-assembled monolayers (SAMs) shifts the threshold gate voltage, while maintaining a very low subthreshold swing of the single-crystal devices (0.11 V/decade). The results, excluding influences of parasitic contacts and grain boundaries, demonstrate SAM-induced nanoscale charge injection up to ~10^12 cm^-2 at the surface of the organic single cryst…
In this paper, two dimensional modulation of the potential in sexithiophene (T6) / N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN2) heterojunction field effect transistors due to the specific microstructure at the interface is used to explain the negative transconductance effect (NTC) experienced in sexithiophene (T6) / N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN2) heterojunction field effect transistors. The NTC effect has been experienced in tunnel devices, such as the tunnel diode, the resonant tunneling field effect transistors (RT-FETs), resonant tunneling double barrier devices. I…
Single-crystal organic field-effect transistors (OFETs) based on p-channel molecular semiconductors have led to breakthrough carrier mobilities and to the observation of band-like transport. These results represent the limit in our quest for the ultimate OFET performance. However, band-like transport has not been reported for n-channel OFETs and, for p-channel transistors, it is not understood why it occurs only for certain molecular materials. Here we report band-like electron transport for n-channel OFETs based on PDIF-CN2 single-crystals. Devices with different gate dielectrics - vacuum, Cy…
We measure the complex impedance between source/drain electrodes and the gate electrode of a pentacene thin-film transistor (TFT) at frequencies 50 Hz < omega/2pi < 20 kHz. Modeling the TFT as a distributed RC network (RC transmission line), we find that the data cannot be explained by a model including only a real, frequency-independent sheet conductivity. Instead, we use the RC transmission line model to extract the frequency-dependent complex sheet conductivity sigma(omega) = sigma'(omega) + jsigma"(omega) of the pentacene film. At high frequencies, sigma(omega) increases with frequency, si…
The present work is focused on theoretical and experimental study of localised levels in organic materials suitable for light-emitting devices and field effect transistors by means of thermal techniques. In our work we focused on low molecular compounds as well as on polymers, especially of two classes of materials: oxadiazoles and quinoxalines. Both organic compounds are well know as electron transport materials in OLEDs.
As high-performance organic semiconductors, π-conjugated polymers have attracted much attention due to their charming advantages including low-cost, solution processability, mechanical flexibility, and tunable optoelectronic properties. During the past several decades, the great advances have been made in polymers-based OFETs with p-type, n-type or even ambipolar characterics. Through chemical modification and alignment optimization, lots of conjugated polymers exhibited superior mobilities, and some mobilities are even larger than 10 cm2 V-1 s-1 in OFETs, which makes them very promising for t…
Solution processed polymers are at the core of organic electronics. Polyradicals (polymers in which each repeating unit contains an unpaired spin) are unique alternatives to their p-conjugated, semiconducting counterparts. Unique of polyradicals are tunable charge states localized at their repeating units, which enable electrically switchable charge transport regimes. Tremendous efforts were focused on polyradical memristors and batteries. Notwithstanding recent progress in doping, polyradical field-effect transistors (PR-FETs) have not been reported. Here, we show that vertical architectures,…
Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically s…
We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0-30/μm) to the Pd electrodes. The average mobility is increased three, six and nine times for low, medium and high SWCNT densities, respectively, compared to the devices with zero SWCNT. The current on-off ratio and on-current are increased up to 40 times and 20 times with increasing the SWCNT density. We explain the improved device performanc…
We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore determine their mobility.
In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to use a silanized Si wafer for curing the stamps and to handle a fragile micron-thickness polydimethylsiloxane (PDMS) insulating film and laminate it, bubble free, against the PDMS transistor stamp. We find that despite the altered design, rougher PDMS surface, and lamination and measurement of the device in air, we still achieve electrical mobilities of order 1…
Polymer based printable organic thin film transistor (OTFT) is a viable low cost alternative to amorphous silicon based thin film transistors and possesses light-weight and flexibility advantage. In this paper, we report on the hole injecting properties of doped PANI in OLED devices using it as an anode. From these results we conclude that hole doped PANI layers can be used as a low contact resistance source and drain electrode material for polymer OTFTs.
Transport properties of a series of poly(3-hexylthiophene) organic field effect transistors with Cr, Cu and Au source/drain electrodes were examined over a broad temperature range. The current-voltage characteristics of the injecting contacts are extracted from the dependence of conductance on channel length. With reasonable parameters, a model of hopping injection into a disordered density of localized states, with emphasis on the primary injection event, agrees well with the field and the temperature dependence of the data over a broad range of temperatures and gate voltages.
Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing production schemes further boosts the benefits offered by such technology, facilitating the implementation of cheap, conformable, bio-compatible electronic applications. The result shown in this work challenges the widespread assumption that such class of electronic devices is relegated to low-frequency operation, owing to the limited charge mobility of the …
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different dielectrics (SiO$_2$ and Cytop). We show, it is possible to fabricate devices which are immune to gate bias stress. For other material combinations, charge trapping occurs in the semiconductor alone, …
In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device performance- has been related to the quality of the organic semiconductor. Recently, it has been appreciated that also the nearby dielectric has an unexpectedly strong influence. The mechanisms responsible for this influence are not understood. To investigate these mechanisms we have studied transport through organic single crystal FETs with different gate insul…
Electronic transport through rubrene single-crystal field effect transistors (FETs) is investigated experimentally in the high carrier density regime (n ~ 0.1 carrier/molecule). In this regime, we find that the current does not increase linearly with the density of charge carriers, and tends to saturate. At the same time, the activation energy for transport unexpectedly increases with increasing n. We perform a theoretical analysis in terms of a well-defined microscopic model for interacting Frohlich polarons, that quantitatively accounts for our experimental observations. This work is particu…
The organic electrochemical transistor (OECT) with a conjugated polymer as the active material is the elementary unit of organic bioelectronic devices. Increased functionalities, such as low power consumption, can be achieved by building complementary circuits featuring two or more OECTs. Complementary circuits commonly combine both p- and n-type transistors to reduce power draw. While p-type OECTs are readily available, n-type OECTs are less common mainly due to poor stability of the n-type active channel material in aqueous electrolyte. Additionally, an OECT based complementary circuit requi…
We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift is due to space-charge transferred from the contacts, and can be modeled quantitatively without free fitting parameters, using Poisson's equation, and by assuming that the density of states in rubrene is that of a conventional inorganic semiconductor. Our results demonstrate the consistency, at the quantitative level, of a variety of recent experiments on ru…
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether a chosen model is adequate to represent the transistor operation. This two-step technique analyzes the electrical measurements of a series of TFTs with diffe…
Triethylsilylethynyl anthradithiophene (TESADT) holds considerable promise for organic transistor applications due to the high electrical mobilities attained by post-deposition crystallization using solvent vapour annealing. We have studied thermal annealing as an alternative route to post-deposition crystallization of TESADT films. Thermal annealing initially appears promising, producing mm-sized crystal domains, but poor electrical performance is obtained, which we attribute to a combination of crack formation and potentially also structural transition during the anneal process. We also find…
Existing flexible electronics are planar, nonbreathable, and easily damaged. In this work, authors introduce a new paradigm of free-form three-dimensional integrated circuits assembled on a single textile thread for ultimate flexibility. Transistors are assembled as daisy chain on a thread and utilize deep eutectic solvent gels, or eutectogels as nonvolatile, breathable, and repairable dielectric for gating organic electrochemical transistor. The eutectogels provide stable transistor performance without the need for encapsulation, are air permeable to the skin, and make the Organic Eutectogel …
We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high-current ON state corresponds to zero or negative back-gate voltage; the low-current OFF state - to a positive back-gate voltage that blocks the Schottky contacts. Illumination of the OFET in the OFF st…
The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected field-effect conductivity. Several analytical methods to calculate the trap DOS from the measured data were used to clarify, if the different methods lead to comparable results. We also used computer simulations to further test the results from the analytical methods. Most methods predict a trap DOS close to the valence band edge that can be very well appro…
We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.
In this paper we report: the use of GO in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.
We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer (SAM). The observed shift of the transfer characteristics range from -2 to 50 V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge …
Organic electrochemical transistors (OECTs) are currently being investigated for various applications, ranging from sensors to logics and neuromorphic hardware. The fabrication process must be compatible with flexible and scalable digital techniques to address this wide spectrum of applications. Here, we report a direct-write additive process to fabricate fully 3D printed OECTs. We developed 3D printable conducting, semiconducting, insulating, and electrolyte inks to achieve this. The 3D-printed OECTs, operating in the depletion mode, can be fabricated on thin and flexible substrates, yielding…
Organic Electrochemical Transistors are considered today as a key technology to interact with biological medium through their intrinsic ionic-electronic coupling. In this paper, we show how this coupling can be finely tuned (in operando) post-microfabrication via electropolymerization technique. This strategy exploits the concept of adaptive sensing where both transconductance and impedance are tunable and can be modified on-demand to match different sensing requirements. Material investigation through Raman spectroscopy, atomic force microscopy and scanning electron microscopy reveals that el…
Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of charge transport, minimizing the density of trap states (trap DOS) is crucial to elucidate the intrinsic transport mechanism. We explore the limits of state-of-the-art organic crystals by measuring single crystalline rubrene field-effect transistors that show textbook like transfer characteristics, indicating a very low trap DOS. Particularly, the high purity o…
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate, bottom contact field-effect transistors (FETs.) Because of the buried metal layer effect the maximum response, due to absorption in the charge layer, will be for a dielectric film ~ 1/4 of a wavelength (in the dielectric) (e.g. ~ 1 micron thick in the infrared.) Results are presented for FETs prepared with both spin-cast polymer and alumina dielectrics prepar…
We carry out a comprehensive theoretical and experimental study of charge injection in Poly(3-hexylthiophene) (P3HT) to determine the most likely scenario for metal-insulator transition in this system. We calculate the optical absorption frequencies corresponding to a polaron and a bipolaron lattice in P3HT. We also analyze the electronic excitations for three possible scenarios under which a first-- or a second--order metal--insulator transition can occur in doped P3HT. These theoretical scenarios are compared with data from infrared absorption spectroscopy on P3HT thin film field-effect tran…
Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor deposition methods. Transition to simpler, higher throughput manufacturing methods such as solution-based processes, are currently been explored as cost-effective alternatives. However, developing printable oxide transistors with high carrier mobility and bias-stable operation has proved challenging. Here we show that hybrid multilayer channels composed of a…
