Inverse Square-Root Field Dependence of Conductivity in Organic Field-Effect Transistors

Hall effect of quasi-hole gas in organic single-crystal transistors

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.

Interaction of solid organic acids with carbon nanotube field effect transistors

A series of solid organic acids were used to p-dope carbon nanotubes. The extent of doping is shown to be dependent on the pKa value of the acids. Highly fluorinated carboxylic acids and sulfonic acids are very effective in shifting the threshold voltage and making carbon nanotube field effect transistors to be more p-type devices. Weaker acids like phosphonic or hydroxamic acids had less effect. The doping of the devices was accompanied by a reduction of the hysteresis in the transfer characteristics. In-solution doping survives standard fabrication processes and renders p-doped carbon nanotu…

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor and an ultra-thin (<20 nm) and highly insulating single-layer fluoropolymer gate dielectric (Cytop). OFETs with PTCDI-C13 (N,N'-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide) as semiconductor exhibit outstanding transistor characteristics: very low threshold voltage (0.2V), onset at 0V, steep subthreshold swing (0.1-0.2 V/decade), no hysteresis and exce…

有机场效应晶体管中电荷陷阱的光学探测

Optical probing of charge traps in organic field-effect transistors

该研究利用聚焦激光照明对有机场效应晶体管中的电荷陷阱进行空间分辨光学探测，观察到开启电压的局部偏移并证实了负电荷捕获，为陷阱分布映射及相关器件优化提供了新方法。

Distribution of Localized States from Fine Analysis of Electron Spin Resonance Spectra in Organic Transistors

We developed a novel method for obtaining the distribution of trapped carriers over their degree of localization in organic transistors, based on the fine analysis of electron spin resonance spectra at low enough temperatures where all carriers are localized. To apply the method to pentacene thin-film transistors, we proved through continuous wave saturation experiments that all carriers are localized at below 50 K. We analyzed the spectra at 20 K and found that the major groups of traps comprise localized states having wave functions spanning around 1.5 and 5 molecules and a continuous distri…

Controlling charge injection in organic field-effect transistors using self-assembled monolayers

We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematically examine the contact resistivity and intrinsic channel mobility, and show that chemically increasing the injecting electrode work function significantly improves hole injection relative to untreated A…

Nonexponetial relaxation of photoinduced conductance in organic field effect transistor

We report detailed studies of the slow relaxation of the photoinduced excess charge carriers in organic metal-insulator-semiconductor field effect transistors consisting of poly(3-hexylthiophene) as the active layer. The relaxation process cannot be physically explained by processes, which lead to a simple or a stretched-exponential decay behavior. Models based on serial relaxation dynamics due to a hierarchy of systems with increasing spatial separation of the photo-generated negative and positive charges are used to explain the results. In order to explain the observed trend, the model is fu…

On the interface polaron formation in organic field-effect transistors

A model describing the low density carrier state in an organic single crystal FET with high-$κ$ gate dielectrics is studied. The interplay between charge carrier coupling with inter-molecular vibrations in the bulk of the organic material and the long-range interaction induced at the interface with a polar dielectric is investigated. This interplay is responsible for the stabilization of a polaronic state with an internal structure extending on few lattice sites, at much lower coupling strengths than expected from the polar interaction alone. This effect could give rise to polaron self-trappin…

Interface Dipole : Effects on Threshold Voltage and Mobility for both Amorphous and Poly-crystalline Organic Field Effect Transistors

We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline organic semiconductors. We show that the same relationship between the threshold voltage and the dipole-induced charges in the SAM holds when both types of devices are fabricated on strictly identical base substrates. Charge carrier mobilities, almost constant for amorphous OFET, are not affected by the dipole in the SAMs, while for polycrystalline OFET (pent…

Miniature Organic Transistors With Carbon Nanotubes as Quasi-One Dimensional Electrodes

As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon nanotubes (SWNT) can be used as quasi one-dimensional (1D) electrodes to construct organic field effect transistors (FET) with molecular scale width (~2 nm) and channel length (1-3 nm). An important feature owing to the quasi 1D electrode geometry is the favorable gate electrostatics that allows for efficient switching of ultra-short organic channels. This affor…

Organic film thickness influence on the bias stress instability in Sexithiophene Field Effect Transistors

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2 substrates. After the T6 film structural analysis by X-Ray diffraction and the FET electrical investigation focused on carrier mobility evaluation, bias stress instability parameters have been estimated and discussed in the context of existing models. By increasing the film thickness, a clear correlation between the stress parameters and the structural properties …

Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile

We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. We conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.

Nanotransfer Printing of Organic and Carbon Nanotube Thin-Film Transistors on Plastic Substrates

A printing process for high-resolution transfer of all components for organic electronic devices on plastic substrates has been developed and demonstrated for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film transistors (TFTs). The nanotransfer printing process allows fabrication of an entire device without exposing any component to incompatible processes and with reduced need for special chemical preparation of transfer or device substrates. Devices on plastic substrates include a Pn TFT with a saturation, field-effect mobility of 0.09 cm^2 (Vs)^-1 and on/off ratio …

Electric field induced charge injection or exhaustion in organic thin film transistor

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as a shift of the threshold thickness at which electric current began to flow. The {\it in-situ} and continuous measurement can also determine qualitatively the accumulation layer thickness together with the distribution function of injected carriers. The accumulation layer thickness is a few mono layers, and it does not depend on gate voltages, rather depends…

Ultrathin Organic Transistors on Oxide Surfaces

In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays and other large-area electronics applications. Low-temperature processability, low-cost fabrication and compatibility with arbitrary substrates are some of the promising advantages of OFETs, among others. Of the many organic materials available, pentacene, in particular, is one of the leading candidates for use in current thin-film OFET architectures - this b…

The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap (trap DOS) of small molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited-current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT's), single crystal field-effect transistors (SC-FET's) and…

Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistors

The surface conductivity is measured by a four-probe technique for pentacene and rubrene single-crystals laminated on polarized and nearly unpolarized molecular monolayers with application of perpendicular electric fields. The polarization of the self-assembled monolayers (SAMs) shifts the threshold gate voltage, while maintaining a very low subthreshold swing of the single-crystal devices (0.11 V/decade). The results, excluding influences of parasitic contacts and grain boundaries, demonstrate SAM-induced nanoscale charge injection up to ~10^12 cm^-2 at the surface of the organic single cryst…

Microstructured tunable two dimensional potential modulation in organic heterostructure field effect transistors

In this paper, two dimensional modulation of the potential in sexithiophene (T6) / N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN2) heterojunction field effect transistors due to the specific microstructure at the interface is used to explain the negative transconductance effect (NTC) experienced in sexithiophene (T6) / N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN2) heterojunction field effect transistors. The NTC effect has been experienced in tunnel devices, such as the tunnel diode, the resonant tunneling field effect transistors (RT-FETs), resonant tunneling double barrier devices. I…

Band-Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization

Single-crystal organic field-effect transistors (OFETs) based on p-channel molecular semiconductors have led to breakthrough carrier mobilities and to the observation of band-like transport. These results represent the limit in our quest for the ultimate OFET performance. However, band-like transport has not been reported for n-channel OFETs and, for p-channel transistors, it is not understood why it occurs only for certain molecular materials. Here we report band-like electron transport for n-channel OFETs based on PDIF-CN2 single-crystals. Devices with different gate dielectrics - vacuum, Cy…

Frequency-dependent complex conductivity of an organic thin-film transistor

We measure the complex impedance between source/drain electrodes and the gate electrode of a pentacene thin-film transistor (TFT) at frequencies 50 Hz < omega/2pi < 20 kHz. Modeling the TFT as a distributed RC network (RC transmission line), we find that the data cannot be explained by a model including only a real, frequency-independent sheet conductivity. Instead, we use the RC transmission line model to extract the frequency-dependent complex sheet conductivity sigma(omega) = sigma'(omega) + jsigma"(omega) of the pentacene film. At high frequencies, sigma(omega) increases with frequency, si…

Thermally Stimulated Luminescence and Current in new heterocyclic materials for Organic field transistors and organic light emitting diodes

The present work is focused on theoretical and experimental study of localised levels in organic materials suitable for light-emitting devices and field effect transistors by means of thermal techniques. In our work we focused on low molecular compounds as well as on polymers, especially of two classes of materials: oxadiazoles and quinoxalines. Both organic compounds are well know as electron transport materials in OLEDs.

Recent Advances on π-Conjugated Polymers as Active Elements in High Performance Organic Field-Effect Transistors

As high-performance organic semiconductors, π-conjugated polymers have attracted much attention due to their charming advantages including low-cost, solution processability, mechanical flexibility, and tunable optoelectronic properties. During the past several decades, the great advances have been made in polymers-based OFETs with p-type, n-type or even ambipolar characterics. Through chemical modification and alignment optimization, lots of conjugated polymers exhibited superior mobilities, and some mobilities are even larger than 10 cm2 V-1 s-1 in OFETs, which makes them very promising for t…

Very low bias stress in n-type organic single crystal transistors

Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ~1% under vacuum and ~10% in air. This remarkable stability of the devices leads to characteristic time constants, extracted by fitting the data with a stre…

Transparent and flexible field-effect transistors and mem-transistors with electroactive layers of solution-processed organic polyradicals

Solution processed polymers are at the core of organic electronics. Polyradicals (polymers in which each repeating unit contains an unpaired spin) are unique alternatives to their p-conjugated, semiconducting counterparts. Unique of polyradicals are tunable charge states localized at their repeating units, which enable electrically switchable charge transport regimes. Tremendous efforts were focused on polyradical memristors and batteries. Notwithstanding recent progress in doping, polyradical field-effect transistors (PR-FETs) have not been reported. Here, we show that vertical architectures,…

Two-dimensional Quasi-Freestanding Molecular Crystals for High-Performance Organic Field-Effect Transistors

Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically s…

The Effect of Carbon Nanotube/Organic Semiconductor Interfacial Area on the Performance of Organic Transistors

We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0-30/μm) to the Pd electrodes. The average mobility is increased three, six and nine times for low, medium and high SWCNT densities, respectively, compared to the devices with zero SWCNT. The current on-off ratio and on-current are increased up to 40 times and 20 times with increasing the SWCNT density. We explain the improved device performanc…

Electro-optic measurement of carrier mobility in an organic thin-film transistor

We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore determine their mobility.

An Improved Process for Fabricating High-Mobility Organic Molecular Crystal Field-Effect Transistors

In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to use a silanized Si wafer for curing the stamps and to handle a fragile micron-thickness polydimethylsiloxane (PDMS) insulating film and laminate it, bubble free, against the PDMS transistor stamp. We find that despite the altered design, rougher PDMS surface, and lamination and measurement of the device in air, we still achieve electrical mobilities of order 1…

Doped Polyaniline: A Possible Anode for Organic Electronics

Polymer based printable organic thin film transistor (OTFT) is a viable low cost alternative to amorphous silicon based thin film transistors and possesses light-weight and flexibility advantage. In this paper, we report on the hole injecting properties of doped PANI in OLED devices using it as an anode. From these results we conclude that hole doped PANI layers can be used as a low contact resistance source and drain electrode material for polymer OTFTs.

Nonlinear charge injection in organic field-effect transistors

Transport properties of a series of poly(3-hexylthiophene) organic field effect transistors with Cr, Cu and Au source/drain electrodes were examined over a broad temperature range. The current-voltage characteristics of the injecting contacts are extracted from the dependence of conductance on channel length. With reasonable parameters, a model of hopping injection into a disordered density of localized states, with emphasis on the primary injection event, agrees well with the field and the temperature dependence of the data over a broad range of temperatures and gate voltages.

Morphology and thermal conductivity of model organic aerogels

The intersection volume of two independent 2-level cut Gaussian random fields is proposed to model the open-cell microstructure of organic aerogels. The experimentally measured X-ray scattering intensity, surface area and solid thermal conductivity of both polymeric and colloidal organic aerogels can be accounted for by the model.

基于铁电HfO₂的具有多热导率态的高效电可切换非易失性热晶体管

High-Efficiency Electrically Switchable Nonvolatile Thermal Transistor with Multiple Thermal Conductivity States Based on Ferroelectric HfO2

针对纳米级热逻辑电路缺乏高效可控非易失性热晶体管的问题，本研究利用铁电o-HfO₂薄膜结合分子动力学模拟与机器学习势，实现四种可逆热导率态，2%应变下开关比达171%，为热逻辑电路发展提供新路径。

Organic Electronics Picks Up the Pace: Mask-Less, Solution Processed Organic Transistors Operating at 160 MHz

Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing production schemes further boosts the benefits offered by such technology, facilitating the implementation of cheap, conformable, bio-compatible electronic applications. The result shown in this work challenges the widespread assumption that such class of electronic devices is relegated to low-frequency operation, owing to the limited charge mobility of the …

Tunable Frohlich Polarons in Organic Single-Crystal Transistors

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device performance- has been related to the quality of the organic semiconductor. Recently, it has been appreciated that also the nearby dielectric has an unexpectedly strong influence. The mechanisms responsible for this influence are not understood. To investigate these mechanisms we have studied transport through organic single crystal FETs with different gate insul…

有机薄膜晶体管中高斯无序陷阱的解析模型

Analytical Model for Gaussian Disorder Traps in Organic Thin-Film Transistor

针对有机半导体中高斯无序陷阱问题，提出结合 Miller-Abrahams 速率与 Fermi-Dirac 统计的解析俘获/去俘获模型，并经 DPP-DTT 薄膜晶体管 TCAD 仿真验证。

具有大热导率切换宽度的固态电化学热晶体管

Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Widths

本文提出基于LaNiOx的固态电化学热晶体管，通过氧化还原调控晶体结构实现4.3 W/mK的热导率切换宽度，并展示出优异循环稳定性，为下一代热管理器件提供新平台。

电子和空穴电导率对有机太阳能电池中传输损耗的贡献

The contribution of electron and hole conductivity to the transport loss in organic solar cells

本研究通过实验揭示了有机太阳能电池中有效电导率遵循电子与空穴电导率的调和平均值，验证了直接提取法，并挑战了几何平均近似，为无序半导体传输建模提供了更准确的框架。

Current saturation and Coulomb interactions in organic single-crystal transistors

Electronic transport through rubrene single-crystal field effect transistors (FETs) is investigated experimentally in the high carrier density regime (n ~ 0.1 carrier/molecule). In this regime, we find that the current does not increase linearly with the density of charge carriers, and tends to saturate. At the same time, the activation energy for transport unexpectedly increases with increasing n. We perform a theoretical analysis in terms of a well-defined microscopic model for interacting Frohlich polarons, that quantitatively accounts for our experimental observations. This work is particu…

Non-Wiedemann-Franz Behavior of the Thermal Conductivity of Organic Semiconductors

Organic semiconductors have attracted increasing interest as thermoelectric converters in recent years due to their intrinsically low thermal conductivity compared to inorganic materials. This boom has led to encouraging practical results, in which the thermal conductivity has predominantly been treated as an empirical number. However, in an optimized thermoelectric material, the electronic component can dominate the thermal conductivity in which case the figure of merit $ZT$ becomes a function of thermopower and Lorentz factor only. Hence design of effective organic thermoelectric materials r…

Flexible complementary logic circuit built from two identical organic electrochemical transistors

The organic electrochemical transistor (OECT) with a conjugated polymer as the active material is the elementary unit of organic bioelectronic devices. Increased functionalities, such as low power consumption, can be achieved by building complementary circuits featuring two or more OECTs. Complementary circuits commonly combine both p- and n-type transistors to reduce power draw. While p-type OECTs are readily available, n-type OECTs are less common mainly due to poor stability of the n-type active channel material in aqueous electrolyte. Additionally, an OECT based complementary circuit requi…

Threshold voltage and space charge in organic transistors

We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift is due to space-charge transferred from the contacts, and can be modeled quantitatively without free fitting parameters, using Poisson's equation, and by assuming that the density of states in rubrene is that of a conventional inorganic semiconductor. Our results demonstrate the consistency, at the quantitative level, of a variety of recent experiments on ru…

Free form three dimensional integrated circuits and wearables on a thread using organic eutectogel gated electrochemical transistors

Existing flexible electronics are planar, nonbreathable, and easily damaged. In this work, authors introduce a new paradigm of free-form three-dimensional integrated circuits assembled on a single textile thread for ultimate flexibility. Transistors are assembled as daisy chain on a thread and utilize deep eutectic solvent gels, or eutectogels as nonvolatile, breathable, and repairable dielectric for gating organic electrochemical transistor. The eutectogels provide stable transistor performance without the need for encapsulation, are air permeable to the skin, and make the Organic Eutectogel …

Critical Evaluation of Organic Thin-Film Transistor Models

Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether a chosen model is adequate to represent the transistor operation. This two-step technique analyzes the electrical measurements of a series of TFTs with diffe…

Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene organic transistors?

Triethylsilylethynyl anthradithiophene (TESADT) holds considerable promise for organic transistor applications due to the high electrical mobilities attained by post-deposition crystallization using solvent vapour annealing. We have studied thermal annealing as an alternative route to post-deposition crystallization of TESADT films. Thermal annealing initially appears promising, producing mm-sized crystal domains, but poor electrical performance is obtained, which we attribute to a combination of crack formation and potentially also structural transition during the anneal process. We also find…

Light-induced switching in the back-gated organic transistors with built-in conduction channel

We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high-current ON state corresponds to zero or negative back-gate voltage; the low-current OFF state - to a positive back-gate voltage that blocks the Schottky contacts. Illumination of the OFET in the OFF st…

Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3

Great success has been achieved in improving the photovoltaic energy conversion efficiency of the organic-inorganic perovskite-based solar cells, but with very limited knowledge on the thermal transport in hybrid perovskites, which would affect the device lifetime and stability. Based on the potential developed from the density functional theory calculations, we studied the lattice thermal conductivity of the hybrid halide perovskite CH3NH3PbI3 using equilibrium molecular dynamics simulations. Temperature-dependent thermal conductivity is reported from 160 K to 400 K, which covers the tetragon…

Ultra-low thermal conductivity in organic-inorganic hybrid perovskite CH3NH3PbI3

We report on the temperature dependence of thermal conductivity of single crystalline and polycrystalline organometallic perovskite CH3NH3PbI3. The comparable absolute values and temperature dependence of the two sample's morphologies indicate the minor role of the grain boundaries on the heat transport. Theoretical modelling demonstrates the importance of the resonant scattering in both specimens. The interaction between phonon waves and rotational degrees of freedom of CH3NH3+ sub-lattice emerges as the dominant mechanism for attenuation of heat transport and for ultralow thermal conductivit…

Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors

We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.

Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods

The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected field-effect conductivity. Several analytical methods to calculate the trap DOS from the measured data were used to clarify, if the different methods lead to comparable results. We also used computer simulations to further test the results from the analytical methods. Most methods predict a trap DOS close to the valence band edge that can be very well appro…

高极性基团与超分子有序结构使无扩展π体系的有机材料具备电荷注入能力与长程导电性

Highly polar groups and supramolecular order enable charge injection and long-range conductivity in organic materials without extended π-systems

针对传统导电有机材料依赖扩展π体系的局限，研究发现无扩展π体系的有机小分子可借助高极性基团的界面偶极实现电荷注入，依托超分子堆叠的电荷转移实现长程导电，为有机导电材料设计提供新路径。

Flexible transistors exploiting P3HT on paper substrates and graphene oxide films as gate dielectrics: proof of concept

In this paper we report: the use of GO in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.

Threshold Voltage Shift in Organic Field Effect Transistors by Dipole-Monolayers on the Gate Insulator

We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer (SAM). The observed shift of the transfer characteristics range from -2 to 50 V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge …

Fully 3D-Printed Organic Electrochemical Transistors

Organic electrochemical transistors (OECTs) are currently being investigated for various applications, ranging from sensors to logics and neuromorphic hardware. The fabrication process must be compatible with flexible and scalable digital techniques to address this wide spectrum of applications. Here, we report a direct-write additive process to fabricate fully 3D printed OECTs. We developed 3D printable conducting, semiconducting, insulating, and electrolyte inks to achieve this. The 3D-printed OECTs, operating in the depletion mode, can be fabricated on thin and flexible substrates, yielding…

通过混合接触设计实现具有持续效率的高亮度有机发光场效应晶体管

Achieving Bright Organic Light Emitting Field Effect Transistors with Sustained Efficiency through Hybrid Contact Design

针对双层有机发光场效应晶体管电荷传输不平衡导致高亮度下效率滚降的问题，提出透明有机/无机混合接触设计，经数值模拟验证可在宽亮度、电流密度范围维持稳定外量子效率，为有机电子领域提供理想发光器件方案。