We report on antiferroelectriclike double polarization hysteresis loops in multiferroic HoMnO3 thin films below the ferroelectric Curie temperature. This intriguing phenomenon is attributed to the domain pinning by defect dipoles which were introduced unintentionally during film growth process. Electron paramagnetic resonance suggests the existence of Fe1+ defects in thin films and first principles calculations reveal that the defect dipoles would be composed of oxygen vacancy and Fe1+ defect. We discuss migration of charged point defects during film growth process and formation of defect dipoles along ferroelectric polarization direction, based on the site preference of point defects. Due to a high-temperature low-symmetry structure of HoMnO3, aging is not required to form the defect dipoles in contrast to other ferroelectrics (e.g., BaTiO3).
Epitaxial NdBa2Cu3O7-x films with a hybrid nanoscale defect structure comprised of BaZrO3 nanodot arrays aligned along the c-axis in one half of the film thickness and aligned perpendicular to the c-axis in the other half thickness of the film were fabricated. Transmission electron microscopy images confirm the orientation of the nanoscale defect structures. The angular dependence of critical current density, Jc, at 77 K, 1 T, shows significantly reduced angular variation of Jc. This study nicely demonstrates how pinning characteristics can be tuned by tuning the nanoscale defect structures wi…
We fabricated epitaxial thin films of hexagonal DyMnO3, which otherwise form in a bulk perovskite structure, via deposition on Pt(111)//Al2O3 (0001) and YSZ(111) substrates: each of which has in-plane hexagonal symmetry. The polarization hysteresis loop demonstrated the existence of ferroelectricity in our hexagonal DyMnO3 films at least below 70 K. The observed 2.2 uC/cm^2 remnant polarization at 25 K corresponded to a polarization enhancement by a factor of 10 compared to that of the bulk orthorhombic DyMnO3. Interestingly, this system showed an antiferroelectric-like feature in its hysteres…
We present a microscopic derivation, without electrodynamical assumptions, of $B(x,y,H(t))$, $M(H(t))$, and $J_c(H(t))$, in agreement with experiments on strongly pinned superconductors, for a range of values of the density and strength of the pinning sites. We numerically solve the overdamped equations of motion % dynamics of these flux-gradient-driven vortices which can be temporarily trapped at pinning centers. The field is increased (decreased) by the addition (removal) of flux lines at the sample boundary, and complete hysteresis loops can be achieved by using flux lines with opposite ori…
Fe$_3$O$_4$ is a ferrimagnetic spinel ferrite that exhibits electric conductivity at room temperature (RT). Although the material has been predicted to be a half metal according to ab-initio calculations, magnetic tunnel junctions (MTJs) with Fe$_3$O$_4$ electrodes have demonstrated a small tunnel magnetoresistance effect. Not even the sign of the TMR ratio has been experimentally established. Here, we report on the magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations. The films exhibited apparent crystal orientation dependence on hysteresis curves. In particula…
We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils two frequency-dependent scaling regions of hysteresis loops. Based on these findings, we constructed a dynamic phase diagram for hysteretic ferroelectric domain dynamics in the presence of ac fields.
Epitaxial heterostructures of La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3 were fabricated on LaNiO3 coated LaAlO3 (100) substrates by pulsed laser ablation. Ferromagnetic and ferroelectric hysteresis established their biferroic nature. Dielectric behviour studied under different magnetic fields over a wide range of frequency and temperatures revealed that the capacitance in these heterostructures varies with the applied magnetic field. Appearance of magnetocapacitance and its dependence on magnetic fields, magnetic layer thickness, temperature and frequency indicated a combined contribution…
The first epitaxial ferroelectric wurtzite film with clear polarization-electric field hysteresis behavior is presented. The coercive field of this epitaxial Al0.7Sc0.3N film on W/c-sapphire substrate is 0.4 +- 0.3 MV cm-1 (8 %) smaller than that of a conventional fiber textured film on a Pt/TiOx/SiO2/Si substrate, attributed to the 0.01 +- 0.007 Å smaller c-axis lattice parameter in the epitaxial film. The strain and decrease of the coercive field most likely originate from epitaxial strain rather than the mismatch in thermal coefficient of expansion. These results provide an insight for furt…
Closed-topology magnetic domains are usually observed in thin films and in an applied magnetic field. Here we report the observation of rectangular cross-section tubular ferromagnetic domains in thick single crystals of CeAgSb2 in zero applied field. Relatively low exchange energy, small net magnetic moment, and anisotropic in-plane crystal electric fields lower the domain wall energy and allow for the formation of the closed-topology patterns. Upon cycling the magnetic field, the domain structure irreversibly transforms into a dendritic open-topology pattern. This transition between closed an…
We present electric and magnetic properties of 0.8Pb(Fe1/2Nb1/2)O3-0.2Pb(Mg1/2W1/2)O3 films epitaxially grown on (001) SrTiO3 substrates using pulsed laser deposition. A narrow deposition window around 710 oC and 0.2 mbar has been identified to achieve epitaxial single-phase thin films. A typical Vogel-Fulcher relaxor-like dielectric and magnetic susceptibility dispersion is observed, suggesting magnetoelectric relaxor behavior in these films similar to the bulk. We determine a magnetic cluster freezing temperature of 36 K, while observing weak ferromagnetism via magnetic hysteresis loops up t…
Using the modified Landau-Ginsburg-Devonshire thermodynamic theory, it is found that the coupling between stress gradient and polarization, or flexoelectricity, has significant effect on ferroelectric properties of epitaxial thin films, such as polarization, free energy profile and hysteresis loop. However, this effect can be completely eliminated by applying an optimized external, uniform electric field. The role of such uniform electric field is shown to be the same as that of an ideal gradient electric field which can suppress the flexoelectricty effect completely based on the present theor…
Superlattices composed of ferromagnetic La0.6Sr0.4MnO3 and ferroelectric 0.7Pb(Mg0,33Nb0.66)O3 0.3(PbTiO3) layers were fabricated on (100) LaAlO3 substrates by pulsed laser deposition technique. Ferromagnetic and frequency independent ferroelectric hysteresis characteristics established the biferroic nature of the superlattices. Influence of magnetic field was observed in tuning the P-E characteristics of the superlattices. Similar effect was observed on application of a high DC electric field to the samples. The nature of the observed ferroelectric properties and their modulation by applied m…
We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffractio…
Experimental results on Bi2FeCrO6 (BFCO) epitaxial films deposited by laser ablation on SrTiO3 substrates are presented. It has been theoretically predicted using first-principles density functional theory that BFCO is ferrimagnetic (with a magnetic moment of 2muB per formula unit) and ferroelectric (with a polarization of ~80 microC/cm2 at 0K). The crystal structure investigated using X-ray diffraction shows that the films are epitaxial with a high degree of crystallinity. Chemical analysis carried out by X-ray Microanalysis and X-ray Photoelectron Spectroscopy indicates the correct cationic …
The influence of La and Nd co-substitution on the structural and magnetic properties of BiFeO3 (BFO) thin films was examined. Epitaxial thin films of pure and, La and Nd co-doped BFO on the SrRuO3 buffered single crystal SrTiO3 (001) substrate were deposited using pulsed laser deposition. The structural change in co doped La and Nd BFO thin films which was caused by the changes of force constant in the crystal lattice induced by ionic radii mismatch was investigated. Raman spectroscopy studies manifest the structural change in doped BFO films from rhombohedral to monoclinic distorted phase whi…
We have performed a combined study of magnetization hysteresis loops and time dependence of the magnetization in a broad temperature range for the ferrimagnetic La2Ni(Ni1/3Sb2/3)O6 double perovskite. This material has a ferrimagnetic order transition at ~100 K and at lower temperatures (~ 20 K) shows the signature of a frustrated state due to the presence of two competing magnetic exchange interactions. The temperature dependence of the coercive field shows an important upturn below the point where the frustrated state sets in. The use of the magnetization vs. applied magnetic field hysteresis…
We have performed bulk-sensitive spin-resolved photoemission spectroscopy in order to clarify the intrinsic spin-resolved electronic states of half-metallic ferromagnet CrO2. We used CrO2 epitaxial films on TiO2(100), which shows a peak at 1 eV with a clear Fermi edge, consistent with the bulk-sensitive PES spectrum for CrO2. In spin-resolved spectra at 40 K, while the Fermi edge was observed in the spin up (majority spin) state, no states at the Fermi level (EF) with an energy gap of 0.5 eV below EF was observed in the spin down (minority spin) state. At 300 K, the gap in the spin down state …
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to external fields, fast spin dynamics and rapid domain wall motion. From ferromagnets they inherit straightforward ways to read out the magnetic state, especially in compensated half metals, where electrons flow in only one spin channel. Here, we investigate domain structure in compensated half-metallic Mn2Ru0.5Ga films and assess their potential in domain wall m…
Room-temperature quantum oscillations of static magnetic susceptibility of silicon-carbide epitaxial layers grown on a silicon substrate by the method of the coordinated substitution of atoms
Zero field cooled spontaneous exchange bias (SEB) is observed in epitaxial La0.7Sr0.3MnO3 (LSMO):NiO self-assembled nanocomposite thin films grown on (001) SrTiO3 single crystal substrate by pulsed laser deposition. SEB is displayed by the novel asymmetry in the hysteresis loop of the composite film along with the field cooled conventional exchange bias (CEB) effect. The training effect shows that exchange bias relaxation is disorder mediated. It is revealed from DC magnetization results that such nanocomposite film divulges spin glass like behaviour, which is arising due to competing ferromag…
We introduce an equivalent-circuit element based on the theory of interface pinning in random systems, to analyze the contribution of domain wall motion below the coercive field to the impedance of a ferroelectric, as a function of amplitude $E_0$ and frequency $f$ of an applied ac electric field. We investigate capacitor stacks, containing ferroelectric 0.5(Ba$_{0.7}$Ca$_{0.3}$)TiO$_{3}$--0.5Ba(Zr$_{0.2}$Ti$_{0.8}$)O$_{3}$ (BCZT) thin films, epitaxially grown by pulsed laser deposition on Nb-doped SrTiO$_3$ single crystal substrates and covered with Au electrodes. Impedance spectra from $f=10…
The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare
Epitaxial strain plays an important role in determining physical properties of perovskite ferroelectric oxide thin films. However, it is very challenging to directly measure properties such as polarization in ultrathin strained films using traditional sandwich capacitor devices, because of high leakage current. We employed a planar electrode device with different crystallographical orientations between electrodes along different electric field orientation to directly measure the in-plane polarization-electric field (P-E) hysteresis loops in fully strained thin films. At high misfit strains suc…
Magneto-optical evidence for single-crystal-like magnetic switching of epitaxial antiferromagnetic LaFeO3 films
Martin-Luther-Universität Halle-Wittenberg（哈勒-维滕贝格马丁路德大学）；Helmholtz-Zentrum Berlin für Materialien und Energie GmbH（柏林亥姆霍兹材料与能源中心有限公司）；University of Potsdam（波茨坦大学）
We have grown epitaxial thin-films of the orthorhombic phase of YMnO3 oxide on Nb:SrTiO3(001) substrates and their structure, magnetic and dielectric response have been measured. We have found that a substrate-induced strain produces an in-plane compression of the YMnO3 unit cell. The temperature-dependent magnetization curves display a significant ZFC-FC hysteresis at temperatures below the Neel temperature (TN around 40K). The dielectric constant increases gradually (up to 26%) below TN and mimics the ZFC magnetization curve. We argue that these effects are a manifestation of magnetoelectric…
The angular-dependent critical current density, Jc(theta), and the upper critical field, Hc2(theta), of epitaxial Ba(Fe1-xCox)2As2 thin films have been investigated. No Jc(theta) peaks for H || c were observed regardless of temperatures and magnetic fields. In contrast, Jc(theta) showed a broad maximum at theta=90 degree, which arises from intrinsic pinning. All data except at theta=90 degree can be scaled by the Blatter plot. Hc2(theta) near Tc follows the anisotropic Ginzburg-Landau expression. The mass anisotropy increased from 1.5 to 2 with increasing temperature, which is an evidence for …
Epitaxial thin films of relaxor PbMg1/3Nb2/3O3 and PbSc0.5Nb0.5O3, and ferroelectric PbZr0.65Ti0.35O3, Pb0.955La0.045Zr0.65Ti0.35O3, and Ba0.4Sr0.6TiO3 were prepared, and their dielectric properties were studied in a broad range of the measurement conditions. In the ferroelectric state, the presence and the change of configuration of the domains determined both the dynamic dielectric nonlinearity and the polarization hysteresis. In thin-film relaxors, the orientation of the randomly interacting dipoles in a random field was responsible for the dynamic dielectric nonlinearity, while the observe…
We show tunable strain-induced perpendicular magnetic anisotropy (PMA) over a wide range of thicknesses in epitaxial ferrimagnetic insulator Eu3Fe5O12 (EuIG) and Tb3Fe5O12 (TbIG) thin films grown by pulsed-laser deposition on Gd3Ga5O12 with (001) and (111) orientations, respectively. The PMA field is determined by measuring the induced anomalous Hall loops in Pt deposited on the garnet films. Due to positive magnetostriction constants, compressive in-plane strain induces a PMA field as large as 32.9 kOe for 4 nm thick EuIG and 66.7 kOe for 5 nm thick TbIG at 300 K, and relaxes extremely slowly…
We present here experimental results obtained on Bi2FeCrO6 (BFCO) epitaxial films deposited by laser ablation directly on SrTiO3 substrates. It has been theoretically predicted, by Baettig and Spaldin, using first-principles density functional theory that BFCO is ferrimagnetic (with a magnetic moment of 2 Bohr magneton per formula unit) and ferroelectric (with a polarization of ~80 microC/cm2 at 0K). The crystal structure has been investigated using X-ray diffraction which shows that the films are epitaxial with a high crystallinity and have a degree of orientation depending of the deposition …
Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work reports a novel ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown on (111)- Nb:SrTiO3 substrates by ion-beam sputtering. Structural and ferroelectric characterizations reveal that the (111)-oriented ZrO2 films are under epitaxial compressive strain and display a switchable ferroelectric polarization of about 20.2 μC/cm2 with a coerc…
We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 hours at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsor…
We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simula…
We report on the structural, magnetic, and electron transport properties of a L1o-ordered epitaxial iron-platinum alloy layer fabricated by magnetron-sputtering on a MgO(001) substrate. The film studied displayed a long range chemical order parameter of S~0.90, and hence has a very strong perpendicular magnetic anisotropy. In the diffusive electron transport regime, for temperatures ranging from 2 K to 258 K, we found hysteresis in the magnetoresistance mainly due to electron scattering from magnetic domain walls. At 2 K, we observed an overall domain wall magnetoresistance of about 0.5 %. By …
Biaxially textured FeSe1-xTex films have been realized on Fe-buffered MgO substrates by pulsed laser deposition. Similar to the Fe/BaFe2As2 bilayers, the crystalline quality of FeSe1-xTex films exhibit a sharp out-of-plane and in-plane texture less than 0.9°. The Fe/FeSe1-xTex bilayers showed high superconducting transition temperatures of over 17 K. The angular-dependent critical current densities exhibit peaks positioned at H // ab similar to other pnictide thin films. The volume pinning force of FeSe1-xTex in this direction is very strong compared with that of Co-doped BaFe2As2, due to a go…
A remarkably high saturation magnetization of ~0.4mu_B/Fe along with room temperature ferromagnetic hysteresis loop has been observed in nanoscale (4-40 nm) multiferroic BiFeO_3 which in bulk form exhibits weak magnetization (~0.02mu_B/Fe) and an antiferromagnetic order. The magnetic hysteresis loops, however, exhibit exchange bias as well as vertical asymmetry which could be because of spin pinning at the boundaries between ferromagnetic and antiferromagnetic domains. Interestingly, like in bulk BiFeO_3, both the calorimetric and dielectric permittivity data in nanoscale BiFeO_3 exhibit chara…
We report the physical properties of Co$_2$CrAl Heusler alloy epitaxial thin films grown on single crystalline MgO(001) substrate using pulsed laser deposition technique. The x-ray diffraction pattern in $θ$-2$θ$ mode showed the film growth in single phase B2-type ordered cubic structure with the presence of (002) and (004) peaks, and the film oriented along the MgO(001) direction. The $ϕ$~scan along the (220) plane confirms the four-fold symmetry and the epitaxial growth relation found to be Co$_2$CrAl(001)[100]$\vert$$\vert$MgO(001)[110]. The thickness of about 12~nm is extracted through the…
The epitaxial system Sm/Co(0001) was studied for Sm coverages up to 1 monolayer (ML) on top of ultrathin Co/W(110) epitaxial films. Two ordered phases were found for 1/3 and 1 ML Sm, respectively. The valence state of Sm was determined by means of photoemission and magnetic properties were measured by magneto-optical Kerr effect. We find that 1 ML Sm causes a strong increase of the coercivity with respect to that of the underlying 10 ML Co film. Element-specific hysteresis loops, measured by using resonant soft x-ray reflectivity, show the same magnetic behaviour for the two elements.
In the paper we present the results of extensive studies of palladium-rich Pd1-xFex alloy films epitaxially grown on MgO single-crystal substrate. In a composition range of x = 0.01-0.07 these materials are soft ferromagnets, the saturation magnetization and magnetic anisotropy of which can be tuned by its composition. Vibrating sample magnetometry was used to study temperature dependences of spontaneous magnetic moment and to establish the temperature of magnetic ordering (Curie temperature). Ferromagnetic resonance (FMR) measurements at low temperatures in the in-plane and out-of-plane geome…
We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagn…
The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two ferromagnetic electrodes is necessary to guarantee a reliable readout. Here, we demonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used to apply a unidirectional anisotropy to magnetic tunnel junctions. For this, we use epitaxial Ni-Mn-Sn films as pinning layers for microfabricated CoFeB/MgO/CoFeB magnetic tunnel junctions. We compare the exchange …
We propose a kind of Ginzburg--Landau equation with quenched randomness. There is a pinning--depinning transition in the system when the external magnetic force is changed. The transition is self-organized when the external magnetic field is slowly changed under the demagnetizing effect. The total magnetization increases stepwise and the probability distribution of the increase in the total magnetization approximately obeys a power law. A hysteresis loop is obtained when the external magnetic field is changed reciprocally. In our model, the coercivity in the magnetization curve is expressed as…
The attainability of modification of the apparent magnetic anisotropy in (III,Mn)V ferromagnetic semiconductors is probed by means of the finite-elements-based modelling. The most representative case of (Ga,Mn)As and its in-plane uniaxial anisotropy is investigated. The hysteresis loops of the continuous films of a ferromagnetic semiconductor as well as films structured with the elliptic antidots are modelled for various eccentricity, orientation, and separation of the anti dots. The effect of anti-dots on the magnetic anisotropy is confirmed but overall is found to be very weak. The subsequen…
We present optimization of [(15 $\unicode{x212B}$) Ni$_{80}$Fe$_{20}$/(5 $\unicode{xC5}$) M]$_{20}$ single crystal multilayers on (001) MgO, with M being Cu, Cu$_{50}$Pt$_{50}$ and Pt. These superlattices were characterized by high-resolution X-ray reflectivity (XRR) and diffraction (XRD) as well as polar mapping of important crystal planes. It is shown that cube on cube epitaxial relationship can be obtained when depositing at the substrate temperature of 100 $^\circ$C regardless of the lattice mismatch (5% and 14% for Cu and Pt, respectively). At lower substrate temperatures poly-crystalline…
Magnetic dynamics of a bulk ferromagnet, a new single crystalline compound Co7(TeO3)4Br6, was studied by ac susceptibility and the related techniques. Very large Arrhenius activation energy of 17.2 meV (201 K) and long attempt time (2x10^(-4)s) span the full spectrum of magnetic dynamics inside a convenient frequency window, offering a rare opportunity for general studies of magnetic dynamics. Within the experimental window the ac susceptibility data build almost ideally semicircular Cole-Cole plots. Comprehensive study of experimental dynamic hysteresis loops of the compound is presented and …
We report on low-temperature photoconductivity (PC) in n-PbTe(Ga) epitaxial films prepared by the hot-wall technique on <111>-BaF_2 substrates. Variation of the substrate temperature allowed us to change the resistivity of the films from 10^8 down to 10_{-2} Ohm x cm at 4.2 K. The resistivity reduction is associated with a slight excess of Ga concentration, disturbing the Fermi level pinning within the energy gap of n-PbTe(Ga). PC has been measured under continuous and pulse illumination in the temperature range 4.2-300 K. For films of low resistivity, the photoresponse is composed of negative…
We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decent ON current (19 $μA/μ$m), high on-off ratio (10$^{7}$), and a subthreshold swing of (SS ~ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have selfconsistently confirmed the switching of the ferroelectric and corresponding change in channel cu…
The exchange coupling at the interfaces of magnetic superlattices consisting of ferromagnetic $SrRuO_3$ and antiferromagnetic $SrMnO_3$ grown on (001) oriented $SrTiO_3$ is studied with in-plane and out-of-plane orientations, with respect to the substrate plane, of the cooling magnetic field. The magnetization of the in-plane, field cooled hysteresis loop is lower than the corresponding in-plane zero-field-cooled hysteresis loop. The out-of-plane field cooled hysteresis loop is shifted, from the origin, along the graphical magnetization axis. We attribute this irreversible rotation of the mome…
A transition in source-drain current vs back gate voltage ID - VBG characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin films has been observed on graphene field-effect transistors on Pb0.92La0.08Zr0.52Ti0.48O3 gates GFET/PLZT-Gate during a vacuum annealing process developed to systematically remove the polar molecules adsorbed on the GFET channel surface. This allows detangle of the extrinsic and intrinsic hysteresis on GFET/PLZT-gate devices and detection of the dynamic sw…
