We demonstrate a simple method to tailor the magnetization reversal mechanisms of Co/Pt multilayers by depositing them onto large area nanoporous anodized alumina (AAO) with various aspect ratios, A = pore depth/diameter. Magnetization reversal of composite (Co/Pt)/AAO films with large A is governed by strong domain-wall pinning which gradually transforms into a rotation-dominated reversal for samples with smaller A, as investigated by a first-order reversal curve method in conjunction with analysis of the angular dependent switching fields. The change of the magnetization reversal mode is attributed to topographical changes induced by the aspect ratio of the AAO templates.
All-optical spin reversal presents a new opportunity for spin manipulations, free of a magnetic field. Most of all-optical-spin-reversal ferromagnets are found to have a perpendicular magnetic anisotropy (PMA), but it has been unknown whether PMA is necessary for the spin reversal. Here we theoretically investigate magnetic thin films with either PMA or in-plane magnetic anisotropy (IMA). Our results show that the spin reversal in IMA systems is possible, but only with a longer laser pulse and within a narrow laser parameter region. The spin reversal does not show a strong helicity dependence …
Ferromagnetic (FM) layers separated by nonmagnetic metallic spacer layers can exhibit Ruderman Kittel Kasuya Yosida (RKKY) coupling which may lead to a stable synthetic antiferromagnetic (SAF) phase. In this article we study magnetization reversal in [Co/Pt] layers by varying the number of bilayer stacks (Pt/Co) as well as thickness of Ir space layer tIr on rigid Si(100) and flexible polyimide substrates. The samples with tIr = 1.0 nm shows a FM coupling whereas samples with tIr = 1.5 nm shows an AFM coupling between the FM layers. At tIr = 2.0 nm, it shows a bow-tie shaped hysteresis loop ind…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to external fields, fast spin dynamics and rapid domain wall motion. From ferromagnets they inherit straightforward ways to read out the magnetic state, especially in compensated half metals, where electrons flow in only one spin channel. Here, we investigate domain structure in compensated half-metallic Mn2Ru0.5Ga films and assess their potential in domain wall m…
Two-dimensional topological solitons, commonly called Skyrmions, are extensively studied in solid-state magnetic nanostructures and promise many spintronics applications. However, three-dimensional topological solitons dubbed hopfions have not been demonstrated as stable spatially localized structures in solid-state magnetic materials. Here we model the existence of such static solitons with different Hopf index values in noncentrosymmetric solid magnetic nanostructures with a perpendicular interfacial magnetic anisotropy. We show how this surface anisotropy, along with the Dzyaloshinskii-Mori…
We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simula…
We present an analytical model for calculating energy barrier for the magnetic field-driven domain wall-mediated magnetization reversal of a magneto-resistive random access memory (MRAM) cell and apply it to study thermal stability factor $Δ$ for various thicknesses of W layers inserted into the free layer (FL) as a function of the cell size and temperature. We find that, by increasing W thickness, the effective perpendicular magnetic anisotropy (PMA) energy density of the FL film monotonically increases, but at the same time, $Δ$ of the cell mainly decreases. Our analysis shows that, in addit…
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr_xTi_1-x)O_3] substrate plates. Electric fields up to +/- 2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive f…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technological nodes, thanks to a reinforcement of the thermal stability factor $Δ$. Although the larger storage layer thickness improves $Δ$, it is expected to negatively impact the writing current and switching …
High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
采用离子注入和脉冲激光熔化的方法制备了不同Mn浓度的稀磁半导体InMnAs。的In 1-xMnxAs外延层的居里温度取决于Mn浓度x，达到82 K x=0.105。Mn离子在In位的取代引起垂直于InMnAs层的压缩应变和沿面内方向的拉伸应变。这导致大的垂直磁各向异性，这对于磁化的电控制的演示和自旋转移矩诱导的磁化反转通常是需要的。
Artificial ferromagnetic nanofiber networks with new electronic, magnetic, mechanical and other physical properties can be prepared by electrospinning and may be regarded as the base of bio-inspired cognitive computing units. For this purpose, it is necessary to examine all relevant physical parameters of such nanofiber networks. Due to the more or less random arrangement of the nanofibers and the possibility of gaining bent nanofibers in this production process, elementary single nanofibers with varying bending radii, from straight fibers to those bent along half-circles, were investigated by…
Controlling magnetism of transition metal atoms by pairing with $π$ electronic states of graphene is intriguing. Herein, through first - principle computation we explore the possibility of switching magnetization by forming the tetrahedral $sp^3$ - metallic $d$ hybrid bonds. Graphene multilayers capped by single - layer cobalt atoms can transform into the $sp^3$ - bonded diamond films upon the hydrogenation of the bottom surface. While the conversion is favored by hybridization between the $sp^3$ dangling bonds and metallic $d_{z^2}$ states, such a strong hybridization can lead to the reorient…
The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies have been used to switch the magnetization of a free layer with perpendicular magnetic anisotropy, the former has limited endurance because of the high current density directly through the junction, while the latter requires an external magnetic field or unconventional configuration to break the symmetry. Here we propose and realize the orbit-transfer torqu…
The competition between shape and perpendicular magnetic anisotropies (PMA) in magnetic thin films gives rise to unusual magnetic behaviors. In ferromagnetic films with moderate PMA the magnetic domain configuration transitions from planar to stripe-like domains above a critical thickness, $t_c$. In this article, we present a detailed study of the magnetization switching mechanism in FePt thin films, where this phenomenon is observed. Using micromagnetic simulations and experiments, we found that below $t_c$ the reversal mechanism is well described by the two-phase model while above this thick…
We report the results of micromagnetic simulations of domain wall (DW) nucleation and pinning/depinning processes in ferromagnetic planar structure consisting of nanowire (NW) with perpendicular anisotropy and special V-shaped nanoparticle (NP) with in-plane anisotropy located on top of NW. The magnetization reversal features of this system in an external magnetic field are investigated depending on the direction of particle magnetic moment. Possible variants of magnetic logic cells (LCs) based on such system are discussed.
Large perpendicular magnetic anisotropy (MA) is highly desirable for realizing atomic-scale magnetic data storage which represents the ultimate limit of the density of magnetic recording. In this work, we studied the MA of transition metal dimers Co-Os, Co-Co and Os-Os adsorbed on two-dimensional ferroelectric In2Se3 (In2Se3-CoOs, In2Se3-OsCo, In2Se3-CoCo and In2Se3-OsOs) by first-principles calculations. It is found that the Co-Os dimer in In2Se3-CoOs has large total perpendicular magnetic anisotropy energy (MAE) of ~ 40 meV. In particular, the MAE arising from Os atom is up to ~ 60 meV. The …
The results of large-scale simulations investigating the dynamics of magnetization reversal in arrays of single-domain nanomagnets after a rapid reversal of the applied field at nonzero temperature are presented. The numerical micromagnetic approach uses the Landau-Lifshitz-Gilbert equation including contributions from thermal fluctuations and long-range dipole-dipole demagnetizing effects implemented using a fast-multipole expansion. The individual model nanomagnets are 9 nm x 9 nm x 150 nm iron pillars similar to those fabricated on a surface with STM-assisted chemical vapor deposition [S. W…
