We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.
DSTT-MRAM: Differential Spin Hall MRAM for On-chip Memories
提出了一种新的基于自旋转移矩的磁随机存储器器件结构。我们的器件结构利用自旋霍尔效应来创建差分存储器单元，该差分存储器单元表现出快速且节能的写入操作。此外，由于固有的差分器件结构，可以执行快速和可靠的读取操作。我们的模拟研究显示，与标准1 T1 R STT-MRAM存储单元相比，写入能量提高了10倍，与单端感测（如标准1 T1 R STT-MRAM）相比，读取操作快了1.6倍。位单元特性对于高性能片上存储器应用是有希望的。
Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surfaces states play a critical role and are of utmost importance in TIs, our present study reflects the need for considering the bulk conduction in understanding PHE in TIs. Here, we demonstrate an enhancement in PHE amplitude by three times by doubling the thickness of Bi$_2$Te$_3$ film on Si (111). The PHE amplitude reaches $\approx$~6 n$Ω$m in 30 quintuple layer (QL) device as compared to $\approx$~2 n$Ω$m in 14 QL. We …
The second-order nonlinear Hall effect illuminates a frequency-doubling transverse current emerging in quantum materials with broken inversion symmetry even when time-reversal symmetry is preserved. This nonlinear response originates from both the Berry curvature dipole and the chiral Bloch electron skew scatterings, reflecting various information of the lattice symmetries, band dispersions, and topology of the electron wavefunctions. Even though many efforts have been put in detecting the nonlinear Hall effect in diverse condensed matter systems, effective manipulation of the two principal me…
Memory effects in ac hopping conductance in the quantum Hall effect regime: Possible manifestation of DX$^-$ centers
利用声表面波在GaAs/Al $_{0.3}$ Ga $_{0.7}$ As异质结中传播的衰减和速度的同时测量，确定了后者的复交流电导。在霍尔平台中部对应的磁场中，二维导电层的交流电导$σ(ω)$和面电子密度$n_s$都依赖于样品的冷却速率。结果，样品“记住”冷却条件。复合电导强烈依赖于红外照明，红外照明也改变了$σ(ω)$和$n_s$。值得注意的是，$σ(ω)$和$n_s$之间的相关性是\emph{universal}，即它与改变这些量的方式无关。结果归因于位于Si掺杂层中的双电子缺陷（所谓的$DX^-$中心）。
Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with th…
We experimentally study the auto-oscillating spin-wave modes in NiFe/$β-$W constriction-based spin Hall nano-oscillators as a function of bias current, in-plane applied field strength, and azimuthal field angle, in the low-field range of 40-80 mT. We observe two different spin-wave modes: i) a linear-like mode confined to the minima of the internal field near the edges of the nanoconstriction, with weak frequency dependencies on the bias current and the applied field angle, and ii) a second, lower frequency mode that has significantly higher threshold current and stronger frequency dependencie…
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metall…
The topological states of matter and topological materials have been attracting extensive interests as one of the frontier topics in condensed matter physics and materials science since the discovery of quantum Hall effect in 1980s. So far all the topological phases such as quantum Hall effect, quantum spin Hall effect and topological insulators and superconductors are characterized by a nonzero integer or Z and Z2 topological invariant. None is a half-integer or fractional. Here we propose a novel type of semimetals which hosts a single cone of Wilson fermions instead of Dirac fermions. The W…
The combination of topology and magnetism is attractive to produce exotic quantum matters, such as the quantum anomalous Hall state, axion insulators and the magnetic Weyl semimetals. MnBi2Te4, as an intrinsic magnetic topological insulator, provides a platform for the realization of various topological phases. Here we report the intermediate Hall steps in the magnetic hysteresis of MnBi2Te4, where four distinguishable magnetic memory states at zero magnetic field are revealed. The gate and temperature dependence of the magnetic intermediate states indicates the noncollinear spin structure in …
Berry curvature (BC) governs topological phases of matter and generates anomalous transport. When a magnetic field is applied, phonons can acquire BC indirectly through spin-lattice coupling, leading to a linear phonon Hall effect. Here, we show that polar lattice distortion directly couples to a phonon BC dipole, which causes a switchable non-linear phonon Hall effect. In a SnS monolayer, the in-plane ferroelectricity induces a phonon BC and leads to the phononic version of the non-volatile BC memory effect. As a new type of ferroelectricity-phonon coupling, the phonon Rashba effect emerges a…
There exists considerable confusion in estimating the spin diffusion length of materials with high spin-orbit coupling from spin pumping experiments. For designing functional devices, it is important to determine the spin diffusion length with sufficient accuracy from experimental results. An inaccurate estimation of spin diffusion length also affects the estimation of other parameters (e.g., spin mixing conductance, spin Hall angle) concomitantly. The spin diffusion length for platinum (Pt) has been reported in literature in a wide range of 0.5 - 14 nm, and particularly it is a constant value…
Magnetic skyrmions are whirl-like nano-objects with topological protection. When driven by direct currents (DC), skyrmions move but experience a transverse deflection. This so-called skyrmion Hall effect is often regarded a drawback for memory applications. Herein, we show that this unique effect can also be favorable for spintronic applications: We show that in a racetrack with a broken inversion symmetry, the skyrmion Hall effect allows to translate an alternating current (AC) into a directed motion along the track, like in a ratchet. We analyze several modes of the ratchet mechanism and sho…
We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional macrospin model. The pulse switching bit error rates reach below $10^{-6}$ for < 10 ns pulses. Similar performance is achieved with exponentially decaying pulses expected to be delivered to the SHE-MTJ …
We report a large spin Hall effect in the 3$d$ transition metal alloy Ni$_x$Cu$_{1-x}$ for $x\in\left\{ 0.3,0.75\right\} $, detected via the ferromagnetic resonance of a Permalloy (Py = Ni$_{80}$Fe$_{20}$) film deposited in a bilayer with the alloy. A thickness series at $x$ = 0.6, for which the alloy is paramagnetic at room temperature, allows us to determine the spin Hall ratio $θ_{\rm{SH}}\approx1$, spin diffusion length $λ_{\rm{s}}$, spin mixing conductance $G_{\uparrow\downarrow}$, and damping $α_{\rm{SML}}$ due to spin memory loss . We compare our results with similar experiments on Py/P…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density current to go through the tunnel junction. For perpendicular MRAM, however, SOT driven switching of the free layer requires an external in-plane field, which poses limitation for viability in practical applications. Here we demonstrate field-free magnetization switching of a perpendicular magnet by utilizing an Iridium (Ir) layer. The Ir layer not only prov…
The spin Hall effect in heavy-metal thin films is routinely employed to convert charge currents into transverse spin currents and can be used to exert torque on adjacent ferromagnets. Conversely, the inverse spin Hall effect is frequently used to detect spin currents by charge currents in spintronic devices up to the terahertz frequency range. Numerous techniques to measure the spin Hall effect or its inverse were introduced, most of which require extensive sample preparation by multi-step lithography. To enable rapid screening of materials in terms of charge-to-spin conversion, suitable high-…
Understanding the evolution of spin-orbit torque (SOT) with increasing heavy-metal thickness in ferromagnet/normal metal (FM/NM) bilayers is critical for the development of magnetic memory based on SOT. However, several experiments have revealed an apparent discrepancy between damping enhancement and damping-like SOT regarding their dependence on NM thickness. Here, using linewidth and phase-resolved amplitude analysis of vector network analyzer ferromagnetic resonance (VNA-FMR) measurements, we simultaneously extract damping enhancement and both field-like and damping-like inverse SOT in Ni$_…
We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong correlations, which polarize the electron system into a single spin and valley resolved moiré miniband with Chern number $C=1$. In contrast to extrinsic, magnetically doped systems, the measured transport energy gap $Δ/k_B\approx 27$~K is larger than the Curie temperature for magnetic ordering $T_C\approx 9$~K, and Hall quantization persists to temperatures o…
The intrinsic spin Hall effect plays an important role in spintronics applications, such as spin-orbit torque-based memory. The bulk space group symmetry determines the form of the bulk spin current conductivity tensor. This paper considers materials for which the local point group symmetry of individual atoms is lower than the global (bulk) symmetry. This enables a position-dependent spin current response, with additional tensor components allowed relative to the bulk response. We present a general method to compute the position-dependent intrinsic spin Hall conductivity, with similar computa…
Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demonstrate strongly enhanced room-temperature spin-to-charge (StC) conversion in graphene driven by the proximity of a semiconducting transition metal dichalcogenide(WS2). By performing spin precession ex…
Discovery of topological Weyl semimetals has revealed the opportunities to realize several extraordinary physical phenomena in condensed matter physics. Specifically, these semimetals with strong spin-orbit coupling, broken inversion symmetry and novel spin texture are predicted to exhibit a large spin Hall effect that can efficiently convert the charge current to a spin current. Here we report the direct experimental observation of a large spin Hall and inverse spin Hall effects in Weyl semimetal WTe2 at room temperature obeying Onsager reciprocity relation. We demonstrate the detection of th…
