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arXiv 0812.3459cond-mat.mes-hall
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邻近极性分子的静电场对硅单分子电导的调制:理论与实验

Modulation of Electrical Conduction Through Individual Molecules on Silicon by the Electrostatic Fields of Nearby Polar Molecules: Theory and Experiment

George Kirczenow, Paul G. Piva, Robert A. Wolkow

摘要:

我们报告的合成,扫描隧道显微镜(STM)和理论建模的静电和输运性质的一维有机异质结构组成的连续线的CF 3-和OCH 3-取代的苯乙烯分子在硅上。在适当的条件下,发现这些极性分子发出的静电场强烈影响通过附近分子和下面的衬底的导电。对于合适的对齐的OCH 3-苯乙烯分子的分子链中的OCH 3基团,其组合的电场显示由从头计算密度泛函计算,以引起沿OCH 3-苯乙烯链,导致在强烈增强的导电通过OCH 3-苯乙烯分子附近的异质结为适度低的负衬底偏压,如实验观察到的潜在的配置文件。在类似的偏置条件下,在实验和理论上都发现与CF 3基团相关的偶极子抑制了底层硅中的输运。在正衬底偏压下,模拟表明,CF 3-苯乙烯分子的不同结构和静电性质可能导致在低温下异质结附近的更急剧的局部导电增强。因此,取代基的选择,它们在硅上的主体苯乙烯分子上的附着位点和分子偶极和更高的多极矩的取向提供了在分子尺度上差分调谐传输的手段。

英文摘要:

We report on the synthesis, scanning tunneling microscopy (STM) and theoretical modeling of the electrostatic and transport properties of one-dimensional organic heterostructures consisting of contiguous lines of CF3- and OCH3-substituted styrene molecules on silicon. The electrostatic fields emanating from these polar molecules are found, under appropriate conditions, to strongly influence electrical conduction through nearby molecules and the underlying substrate. For suitable alignment of the OCH3 groups of the OCH3-styrene molecules in the molecular chain, their combined electric fields are shown by ab initio density functional calculations to give rise to potential profiles along the OCH3-styrene chain that result in strongly enhanced conduction through OCH3-styrene molecules near the heterojunction for moderately low negative substrate bias, as is observed experimentally. Under similar bias conditions, dipoles associated with the CF3 groups are found in both experiment and in theory to depress transport in the underlying silicon. Under positive substrate bias, simulations suggest that the differing structural and electrostatic properties of the CF3-styrene molecules may lead to a more sharply localized conduction enhancement near the heterojunction at low temperatures. Thus choice of substituents, their attachment site on the host styrene molecules on silicon and the orientations of the molecular dipole and higher multipole moments provide a means of differentially tuning transport on the molecular scale.

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