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arXiv 0812.2078cond-mat.mes-hallcond-mat.dis-nncond-mat.supr-con
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Bi2Se3表面的电子形成具有非平凡Berry相的拓扑有序二维气体

Electrons on the surface of Bi2Se3 form a topologically-ordered two dimensional gas with a non-trivial Berry's phase

Y. Xia, L. Wray, D. Qian, D. Hsieh, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, M. Z. Hasan

摘要:

超导体和拓扑绝缘体之间的界面被认为是一种新的准粒子,可以实现容错量子计算的物理方案。在这里,我们提出了高分辨率的角度分辨光电发射实验结果,连同第一性原理计算,表明表面边缘状态的Bi 2 Se 3形成一个拓扑的2D金属。当磁性原子沉积时,表面趋于失去Kramers简并性,并且体价带和导带之间的k空间连接线丢失。我们观察到的状态带有πBerry相,这表明尽管实际材料通常是电子掺杂的,但完全未掺杂的Bi 2Se 3在室温下是Z 2拓扑绝缘体。

英文摘要:

The interface between a superconductor and a topological insulator has been proposed to harbor novel quasiparticles that realize physical schemes for fault-tolerant quantum computation. Here, we present high resolution angle-resolved photoemission experimental results, which along with first principles calculations, suggest that the surface-edge states of Bi2Se3 form a topological 2D metal. When magnetic atoms are deposited, the surface tends to lose Kramers' degeneracy and a k-space connection thread between the bulk valence and conduction bands is lost. Our observed states carry a πBerry's phase suggesting that although the real materials are often electron doped fully undoped Bi2Se3 would be a Z2 topological insulator at room temperature.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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