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arXiv 0812.1214cond-mat.str-elcond-mat.supr-con
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三维RE5Ir4Si10化合物中强耦合电荷密度波有序的光学测量证据

Evidence for strongly coupled charge-density-wave ordering in three-dimensional RE5Ir4Si10 compounds by optical measurements

Riccardo Tediosi, Fabrizio Carbone, A. B. Kuzmenko, J. Teyssier, D. van der Marel, J. A. Mydosh

摘要:

本文报道了Lu $_5$ Ir $_4$ Si $_{10}$和Er $_5$ Ir $_4$ Si $_{10}$的光谱,显示出超导或反铁磁性与电荷密度波(CDW)序共存的现象。我们测量了Lu_5Ir_4Si_(10)费米面上的电荷密度波隙的最大值,其值为2Δ/k_BT_CDW \approx ~(10),远高于弱电子-声子耦合的极限值。通过用描述电子-声子相互作用的Holstein模型分析光导来证实强的电子-声子耦合,表明耦合到声子的中心在30 meV,耦合常数λ \approx 2.6。最后,我们提供的证据表明,大约16%的费米面的Lu 5Ir 4Si 10成为缺口的CDW状态。

英文摘要:

We report optical spectra of Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$, exhibiting the phenomenon of coexisting superconductivity or antiferromagnetism and charge density wave (CDW) order. We measure the maximum value of the charge density wave gap present on part of the Fermi surface of Lu5Ir4Si10, corresponding to a ratio 2Δ/k_B T_CDW \approx 10, well above the value in the limit of weak electron-phonon coupling. Strong electron-phonon coupling was confirmed by analyzing the optical conductivity with the Holstein model describing the electron-phonon interactions, indicating the coupling to phonons centered at 30 meV, with a coupling constant λ\approx 2.6. Finally we provide evidence that approximately 16 % of the Fermi surface of Lu5Ir4Si10 becomes gapped in the CDW state.

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