We have synthesized Cr1.4Fe0.6O3 compound through mechanical alloying of Cr2O3 and Fe2O3 powders and subsequent thermal annealing. The XRD spectrum, SEM picture and microanalysis of EDAX spectrum have been used to understand the structural evolution in the alloyed compound. The alloyed samples are matching to rhombohedral structure with R3C space group. The observation of a modulated magnetic order confirmed a systematic diffusion of Fe atoms into the Cr sites of lattice structure. A field induced magnetic behaviour is seen in the field dependence of magnetization data of the annealed samples. The behaviour is significantly different from the mechanical alloyed samples. The experimental results provided the indications of considering the present material as a potential candidate for opto-electronic applications.
Alpha-Fe2O3 and alpha-Cr2O3 has been mechanical alloyed to prepare Fe1-xCrxO3 oxides for x = 0.2-0.8. Synchrotron X-ray diffraction and Raman spectra have shown inhomogeneous structure of α-Fe2O3 and α-Cr2O3 phases in as-alloyed samples. The as-alloyed samples have shown soft ferromagnetic properties with signature of two Morin transitions. The heat treatment of as-alloyed samples has homogenized structure and successfully incorporated the Cr atoms into the lattice sites of Fe atoms in α-Fe2O3. The magnetic and electrical properties have been modified in the heat treated samples. For example, …
A detailed understanding of the relation between microscopic structure and phonon propagation at the nan oscale is essential to design materials with desired phononic and thermal properties.Here we uncover a new mechanism of phonon interaction in surface oxidized membranes, i.e., native oxide layers interact with phonons in ultra-thin silicon membranes through local resonances. The local resonances reduce the low frequency phonon group velocities and shorten their mean free path. This effect opens up a new strategy for ultralow thermal conductivity design as it complements the scattering mecha…
Monoclinic scheelite bismuth vanadate (BiVO4) is a promising photoanode for water splitting yet the PEC performance is limited due to its relatively higher (2.4 eV) band gap. Here, we successfully decreased its the band gap to 1.72 eV by controlled antimony alloying. Low bandgap antimony alloyed bismuth vanadium oxide (Sb:BiVO4) thin film was prepared by RF sputtering of high purity homemade target, fabricated by solid-state reaction using a mixture of Sb2O3, Bi2O3, and V2O5 powders with desired stoichiometric ratios. Several growth parameters, powder crystallography, post-deposition effects, …
Many mixed ionic/electronic conductors (MIECs) applied in fuel cell electrodes can be considered as alloys between perovskite oxides and ordered oxygen vacancy compounds. For example, in the model MIEC (STF), low oxygen diffusion barrier exist in SrTiO3 lattice, when it has been mixed with SrFeO2.5 with intrinsic oxygen deficiency, the ionic conductivity can be greatly improved. Meanwhile, the electronic conductivity can be optimized by controlling the defect chemistry of the alloy. However, the configurational space is too large in such alloys so that it is difficult for direct atomic modelin…
The compound alpha-Fe1.4Ga0.6O3 has been prepared by mechanical alloying of alpha-Fe2O3 and Ga2O3 and subsequent heating of the mechanical alloyed samples in vacuum condition. Magnetic ordering of alpha-Fe2O3 has been modified by substitution of non-magnetic Ga atoms. The ferromagnetism in alpha-Fe1.4Ga0.6O3 is more soft and enhanced in comparison to alpha-Fe2O3. Mössbauer spectroscopy also confirmed enhanced ferromagnetic order in alpha-Fe1.4Ga0.6O3. The room temperature soft ferromagnetism by Ga substitution is interesting for designing alpha-Fe2O3 based unconventional ferromagnet, which is …
Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal-insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity, etc. More importantly, the exhibited multifunctionality could be tuned by various external fields, which has enabled demonstration of novel electronic devices. In this article, recent studies of the multi-fields modulation of physical properties in oxide thin films have been reviewed. Some of the key issues and prospects about this field are also addressed.
Dual-gate electrostatic modulation gives an attractive approach for transistors performance improvement, threshold voltage (Vth) and operation mode modulation, which is favorable for chemical sensor and logic applications. Here, a self-aligned junctionless semiconducting oxide channels are dual-gate electrostatic modulated by solution-processed chitosan-based proton conductors on paper substrates. The low-voltage junctionless paper transistors can be effectively tuned from depletion mode to enhancement mode by the second in-plane gate. OR logic gate was experimentally demonstrated on such dual…
A modulation-doping approach to control the carrier density of the high-density electron gas at a prototype polar/non-polar oxide interface is presented. It is shown that the carrier density of the electron gas at a GdTiO3/SrTiO3 interface can be reduced by up to 20% from its maximum value (~ 3x10^14 cm^-2) by alloying the GdTiO3 layer with Sr. The Seebeck coefficient of the two-dimensional electron gas increases concurrently with the decrease in its carrier density. The experimental results provide insight into the origin of charge carriers at oxide interfaces exhibiting a polar discontinuity…
To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases, but then gradually decreases as Vg increases, clearly suggesting the anti-parabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.
Although there are so many reports on the carrier effective mass (m*) of a transparent oxide semiconductor BaSnO3, it is almost impossible to know the intrinsic m* value because the reported m* values are scattered from 0.06 to 3.7 m0. Here we successfully clarified the intrinsic m* of BaSnO3, m*=0.40 0.01 m0, by the thermopower modulation clarification method. We also found the threshold of degenerate/non-degenerate semiconductor of BaSnO3; At the threshold, the thermopower value of both La-doped BaSnO3 and BaSnO3 TFT structure was 240 microvolt k-1, bulk carrier concentration was 1.4E19 cm-3…
The introduction of manganite buffer layers, La7/8Sr1/8MnO3 (LSMO) in particular, at the metallic interface between SrTiO3 (STO) and another band insulator suppresses the carrier density of the interfacial two-dimensional electron gas (2DEG) and improves significantly the electron mobility. However, the mechanisms underlying the extreme mobility enhancement remain elusive. Herein, we used 18O isotope exchanged SrTi18O3 as substrates to create 2DEG at room temperature with and without the LSMO buffer layer. By mapping the oxygen profile across the interface between STO18 and disordered LaAlO3 o…
2D-layered tin (II) oxide (SnO) has recently emerged as a promising bipolar channel material for thin-film transistors and complementary metal-oxide-semiconductor devices. In this work, we present a first-principles investigation of the mechanical properties of ultrathin SnO, as well as the electronic implications of tensile strain ($ε$) under both uniaxial and biaxial conditions. Bulk-to-monolayer transition is found to significantly lower the Young's and shear moduli of SnO, highlighting the importance of interlayer Sn-Sn bonds in preserving structural integrity. Unprecedentedly, few-layer S…
Modulation-doped oxide two-dimensional electron gas (2DEG) formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface, provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x=0, 1/8, 1/3, 1/2, and 1) thus the filling of the Mn eg subbands as well as the LSMO polarity on the transport properties of d-LAO/LSMO/STO. Upon increasing the LSMO film thickness from 1 unit cell (uc) to 2 uc, a sharp metal to insulator transition of interface conduction was observed, independent of x. …
Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomena with depth-dependent atomic resolution as well as element- and orbital selectivity. Here, we utilize a combination of core-level and valence-band soft x-ray standing-wave photoemission spectroscopy,…
Vanadium oxides have been highly attractive for over half a century since the discovery of the metal insulator transition near room temperatures. Here NaxVO2 is studied through a systematic comparison with other layered sodium metal oxides with early 3d transition metals, first disclosing a unified evolution pattern of Na density waves through in situ XRD analysis. Combining ab-initio simulations and theoretical modelings, a sodium-modulated Peierls-like transition mechanism is then proposed for the bonding formation of metal ion dimers. More importantly, the unique trimer structure in NaxVO2 …
Electron- and hole-doped La$_2$CoMnO$_6$(LCMO) are investigated using first principles DFT calculations. Hole and electron doping are achieved respectively by introducing Sr$^{2+}$ at La$^{3+}$ sites and by inducing O-site vacancies in LCMO. Electronic structure calculations suggest that hole doping alters the charge and valence state of Co ions, whereas electron doping influences the Mn ions. Introduction of defects is found to enhance antisite disorder(ASD) at Co/Mn site, which is expected to influence the magnetodielectric properties of the system. Our calculations suggest that while ASD an…
We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type-II to type-III. The transferred charge, resulting in built-in electric fields, and change in band alignment are manifested in electrical transport and h…
The dielectric permittivity of a material encapsulates the essential physics of light-matter interaction into the material's local response to optical excitation. Dynamic, photo-induced modulation of the permittivity can enable an unprecedented level of control over the phase, amplitude, and polarization of light. Therefore, the detailed dynamic characterization of technology-relevant materials with substantially tunable optical properties and fast response times is a crucial step in the realization of tunable optical devices. This work reports on the extraordinarily large permittivity changes…
We report on the non-trivial nanoscale kinetics of the deposition of novel complex oxide heterostructures composed of a unit-cell thick correlated metal LaNiO3 and dielectric LaAlO3. The multilayers demonstrate exceptionally good crystallinity and surface morphology maintained over the large number of layers, as confirmed by AFM, RHEED, and synchrotron X-ray diffraction. To elucidate the physics behind the growth, the temperature of the substrate and the deposition rate were varied over a wide range and the results were treated in the framework of a two-layer model. These results are of fundam…
We investigate diffusion of a peptide drug through Graphene Oxide (GO) membranes that are modeled as a porous layered laminate constructed from aligned flakes of GO. Our experiments using a peptide drug show a tunable non-linear dependence of the peptide concentration upon time. This is confirmed using numerical simulations with a diffusion equation accounting for the photothermal degradation of fluorophores and an effective percolation model. This modeling yields an interpretation of the control and delay of drug diffusion through GO membranes. The ability to modulate the density of hydrogel-…
A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current IDS modulation by a gate-source voltage VGS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the…
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for …
Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxides devices remains far behind their 3d-oxides analogs. The carriers mobility in these oxides is significantly hampered by the inevitable presence of defects generated during the growth process. Here, …
A theory for spin and lattice couplings to the electronic states in high-T$_C$ oxides is presented, with HgBa$_2$CuO$_4$ as an example. A simple analytical model suggests that the barrel band is sensitive to potential perturbations with long-range Fourier components, and that gaps can be opened at the Fermi energy. This is confirmed in self-consistent band calculations for modulations in elongated supercells, where spin waves and phonon coupling compete for equal q-vectors. It is argued that the wavelengths of spin-wave modulations and of the phonon modes with large coupling, depend on the dop…
Band calculations on HgBa$_2$CuO$_4$ and La$_{(2-x)}$Sr$_x$CuO$_4$ with phonon and spin-waves within the CuO planes show that partial gaps are created at various energies depending on wavelengths. Spin and phonon gaps appear at different energies when the modulations are along [1,1,0], while they are at the same energy for modulations along [1,0,0]. It is shown that the ability to form gaps and antiferromagnetic waves is correlated with the strength of the interaction parameter $λ_{sf}$ for spin fluctuations. Many unusual properties of the high-T$_C$ oxides can be understood from spin-phonon c…
In past few decades, Rashba spin-orbit coupling (SOC) has been successfully employed for the emergence of exotic phenomena at the quantum oxide interfaces. In these systems, the combined effect of charge transfer, broken symmetries and SOC yields intriguing interfacial magnetism and transport properties. Here, we provide an insight to control and tune interfacial phenomena in CaMnO3/CaIrO3 based 3d-5d oxide heterostructures by the charge transfer driven Rashba SOC. Anomalous Hall effect in these canted antiferromagnetic heterostructures originates from the intrinsic contribution associated wit…
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At…
Multi-state electromagnetic phase modulations in NiCo2O4 through cation disorder and hydrogenation
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials Science, Shanxi Normal University（教育部磁性分子与磁信息材料重点实验室 & 山西师范大学化学与材料科学学院）；Research Institute of Materials Science, Shanxi Key Laboratory of Advanced Magnetic Materials and Devices, Shanxi Normal University（山西师范大学材料科学研究院、山西省先进磁性材料与器件重点实验室）
An external electric field induced reversible modulation of room temperature magnetic moment is achieved in an epitaxial and insulating thin film of dilutely cobalt-doped anatase TiO2. This first demonstration of electric field effect in any oxide based diluted ferromagnet is realized in a high quality epitaxial heterostructure of PbZr0.2Ti0.8O3/Co:TiO2/SrRuO3 grown on (001) LaAlO3. The observed effect, which is about 15% in strength in a given heterostructure, can be modulated over several cycles. Possible mechanisms for electric field induced modulation of insulating ferromagnetism are discu…
Engineering the electronic band structure of two-dimensional electron liquids (2DELs) confined at the surface or interface of transition metal oxides is key to unlocking their full potential. Here we describe a new approach to tailoring the electronic structure of an oxide surface 2DEL demonstrating the lateral modulation of electronic states with atomic scale precision on an unprecedented length scale comparable to the Fermi wavelength. To this end, we use pulsed laser deposition to grow anatase TiO2 films terminated by a (1 x 4) in-plane surface reconstruction. Employing photo-stimulated che…
Thermally Configurable Multi-Order Polar Skyrmions in Multiferroic Oxide Superlattices
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University（浙江大学材料科学与工程学院硅与先进半导体材料省部共建国家重点实验室）；Zhejiang Key Laboratory of Advanced Solid State Energy Storage Technology and Applications, Taizhou Institute of Zhejiang University（浙江工业大学储能技术与应用浙江省重点实验室台州研究院）；Institute of Fundamental and Transdisciplinary Research, Zhejiang University（浙江大学基础与交叉科学研究院）；School of Engineering, Hangzhou City University（杭州城市学院工学院）；College of Materials Science and Engineering, Zhejiang University of Technology（浙江工业大学材料科学与工程学院）
Correlated electrons in transition metal oxides (TMOs) exhibit a variety of emergent phases. When TMOs are confined to a single-atomic-layer thickness, experiments so far have shown that they usually lose diverse properties and become insulators. In an attempt to extend the range of electronic phases of the single-atomic-layer oxide, we search for a metallic phase in a monolayer-thick epitaxial SrRuO$_3$ film. Combining atomic-scale epitaxy and angle-resolved photoemission measurements, we show that the monolayer SrRuO$_3$ is a strongly correlated metal. Systematic investigation reveals that t…
The structural effects of (111) growth of La2CoMnO6 on SrTiO3 and LSAT -- new insights from 3D crystallographic characterisation with 4D-STEM and Digital Dark Field imaging
Topographic patterning in perovskite oxide membranes for local control of strain, nanomechanics and electronic structure
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)（巴塞罗那材料科学研究所）；Catalan Institute of Nanoscience and Nanotechnology (ICN2)（加泰罗尼亚纳米科学与技术研究所）；Department of Physics, Universitat Politècnica de Catalunya（加泰罗尼亚理工大学物理系）；Institució Catalana de Recerca i Estudis Avançats (ICREA)（加泰罗尼亚高级研究学院）
We found a new cobalt oxide (CaOH)1.14CoO2 by utilizing the high-pressure technique. X-ray and electron diffraction studies revealed that the compound has layer structure which consists of CdI2-type CoO2 layers and rock-salt-type double CaOH atomic layers. The two subcells have incommensurate periodicity along the a-axis, resulting in modulated crystal structure due to the inter-subcell interaction. The structural modulation affects carrier conduction through the potential randomness. We found that the two-dimensional (2-D) variable-range hopping (VRH) regime with hole conduction is dominant a…
Manipulation of oxygen vacancies (V_O) in single oxide layers by varying the electric field can result in significant modulation of the ground state. However, in many oxide multilayers with strong application potentials, e.g. ferroelectric tunnel junctions and solid-oxide fuel cells, understanding V_O behaviour in various layers under an applied electric field remains a challenge, owing to complex V_O transport between different layers. By sweeping the external voltage, a reversible manipulation of V_O and a corresponding fixed magnetic phase transition sequence in cobaltite/manganite (SrCoO3-…
Optical Signature of Moiré Superlattices Formed by Twisted SrTiO$_3$ Membranes
Rice University（莱斯大学）；University of Pennsylvania（宾夕法尼亚大学）；North Carolina State University（北卡罗来纳州立大学）；Max Planck Institute for Solid State Research（马克斯·普朗克固体的研究研究所）
We report on a theoretical study of electromagnetic properties of zigzag magnesium oxides nanoribbons (Z-MgONRs). We propose that the polar charges and the spin polarization are the two key factors for edge magnetism. Based on first-principle calculations, we demonstrate that both O- and Mg-edges are magnetic and their magnetic moments all can be efficiently modulated via external electric field.And the edge magnetism is further studied in the framework of effective tight-binding model, which provides a starting point for the calculation of one particle Green's function and the determination o…
