硅基金纳米结构薄膜中的离子诱导偏析
Ion induced segregation in gold nanostructured thin films on silicon
摘要：
我们报告了一个直接观察金原子的偏析到近表面政权由于1.5兆电子伏Au 2+离子的影响孤立的金纳米结构沉积在硅上。在6.3x1012离子cm-2 s-1的高光束通量下，以6x10^13、1x10^14和5x10^14离子cm-2的注量辐照，金原子进入硅衬底的最大传输距离分别为60、45和23 nm。在较低的能量密度（6x 1013离子cm-2）的运输已被发现与金硅化物（Au5 Si 2）的形成。在5x10^14离子cm-2的高注量值下，金硅化物的解离和外扩散导致金向富缺陷表面和界面区域的偏析。
英文摘要：
We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6x10^13, 1x10^14 and 5x10^14 ions cm-2 at a high beam flux of 6.3x1012 ions cm-2 s-1 show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6x1013 ions cm-2) transport has been found to be associated with the formation of gold silicide (Au5Si2). At a high fluence value of 5x10^14 ions cm-2, disassociation of gold silicide and out-diffusion lead to segregation of gold to defect - rich surface and interface region.
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