We discuss four important aspects of 1.5 MeV Au2+ ion-induced flux dependent sputtering from gold nanostrcutures (of an average size 7.6 nm and height 6.9 nm) that are deposited on silicon substrates: (a) Au sputtering yield at the ion flux of 6.3x10^12 ions cm-2 s-1 is found to be 312 atoms/ion which is about five times the sputtering yield reported earlier under identical irradiation conditions at a lower beam flux of 10^9 ions cm-2 s-1, (b) the sputtered yield increases with increasing flux at lower fluence and reduces at higher fluence (1.0x10^15 ions cm-2) for nanostructured thin films while the sputtering yield increases with increasing flux and fluence for thick films (27.5 nm Au deposited on Si) (c) Size distribution of sputtered particles has been found to vary with the incident beam flux showing a bimodal distribution at higher flux and (d) the decay exponent obtained from the size distributions of sputtered particles showed an inverse power law dependence ranging from 1.5 to 2.5 as a function of incident beam flux. The exponent values have been compared with existing theoretical models to understand the underlying mechanism. The role of wafer temperature associated with the beam flux has been invoked for a qualitative understanding of the sputtering results in both the nanostructured thin films and thick films.
Nanostructured Immunosensors. Application to the detection of Progesterone
报道了一种测定孕酮的新型纳米结构电化学免疫传感器。该方法结合了金纳米粒子的性质与石墨-聚四氟乙烯复合电极基质的使用，其中金纳米粒子通过简单的物理包含被纳入。抗孕酮抗体直接附着在电极表面。免疫传感器的功能是基于孕酮和碱性磷酸酶标记的孕酮之间的竞争测定。通过1-萘酚的电化学氧化完成亲和反应的监测。用金纳米粒子修饰石墨-聚四氟乙烯电极基体，显著提高了1-萘酚的电氧化响应。使用+0.3V的检测电位，孕酮的检测限为0.84 ng ml-1。在3.5 ng ml-1孕酮浓度水平下加标的7份牛奶样品的分析产生了101 ± 6%的平均回收率。用石墨-聚四氟乙烯-胶体金-酪氨酸酶电极检测抗原-抗体反应，使用磷酸苯酯作为碱性磷酸酶底物产生苯酚，随后在复合电极上在-0.1 V下还原，产生孕酮检测灵敏度的高度提高
Compact chromium oxide thin film resistors for use in nanoscale quantum circuits
我们报告的一系列薄氧化铬薄膜的电特性，直流溅射生长，以评估其适用性作为纳米电子学芯片电阻。通过增加氧掺杂的水平，氧化铬膜的室温方块电阻从28 $Ω/ \square$变化到32.6k $Ω/ \square$。研究了在液氦中冷却到4.2K时电阻的变化;在4.2K时，薄层电阻随组分从65 $Ω/ \square$到20 G以上$Ω/ \square$而变化。所有测量的膜在所有测量的温度下显示欧姆行为。对于用于使用硅纳米线进行量子相位滑移测量的片上器件，需要硅纳米线和氧化铬之间的界面。通过表征界面接触电阻，我们发现金中间层是有利的：氧化铬-金界面的比接触电阻率为0.15 m $Ω$ cm $^2$，远低于直接氧化铬-硅界面的值65 m $Ω$ cm $^2$。我们的结论是，这些氧化铬薄膜是适合用于纳米级电路作为高价值的电阻器，与电阻率可调的氧含量。
Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga$_2$O$_3$ thin films
INESC Microsystems and Nanotechnology（微电子与纳米技术研究所）；Institute for Plasmas and Nuclear Fusion, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院等离子体与核聚变研究所）；Université Caen Normandie, CEA, ENSICAEN, CNRS, Normandie Univ, CIMAP UMR6252（卡昂诺曼底大学）；Centre for Nuclear Sciences and Technologies, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院核科学与技术中心）；Department of Nuclear Science and Engineering, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院核科学与工程系）
