We present a detailed study of the interface morphology of an electro-deposited (ED) Ni/Cu bilayer film by using off-specular (diffuse) neutron reflectivity technique and Atomic Force Microscopy (AFM). The Ni/Cu bilayer has been electro-deposited on seed layers of Ti/Cu. These two seed layers were deposited by magnetron sputtering. The depth profile of density in the sample has been obtained from specular neutron reflectivity data. AFM image of the air-film interface shows that the surface is covered by globular islands of different sizes. The AFM height distribution of the surface clearly shows two peaks [Fig. 3] and the relief structure (islands) on the surface in the film can be treated as a quasi-two-level random rough surface structure. We have demonstrated that the detailed morphology of air-film interfaces, the quasi-two level surface structure as well as morphology of the buried interfaces can be obtained from off-specular neutron reflectivity data. We have shown from AFM and off-specular neutron reflectivity data that the morphologies of electro-deposited surface is distinctly different from that of sputter-deposited interface in this sample. To the best of our knowledge this is the first attempt to microscopically quantify the differences in morphologies of metallic interfaces deposited by two different techniques viz. electro-deposition and sputtering.
Absolute X-ray reflectivity of chemically vapor deposited (CVD) diamond single crystals was measured in the Laue geometry in the double-crystal non-dispersive setting with an asymmetric Si beam conditioner crystal. The measurements were supplemented by rocking curve topography. The measured reflectivity curves are examined in the framework of Darwin-Hamilton approach using a set of two independent parameters, the characteristic thickness of mosaic blocks and their average angular misorientation. Due to strong extinction effects the width of reflectivity curves does not directly represent the a…
Boron carbide thin films of different thicknesses deposited by ion beam sputtering were studied. The deposited films were characterized by grazing incidence hard x-ray reflectivity (GIXR), resonant soft x-ray reflectivity (RSXR), x-ray photo electron spectroscopy (XPS), resonant Rutherford backscattering spectrometry (RRBS), and time of flight secondary ion mass spectrometry (TOF-SIMS). An in-depth profile of the chemical elements constitute the films is reconstructed based on analysis of reflectivity curves measured in the vicinity of B K-edge. The composition of films is closely dependent on…
Barrium fluoride (BaF2) thin films were prepared by electron beam evaporation technique at room temperature, on glass, Silicon and Aluminum substrates having thickness of 20 nm each. Its structural property and surface morphology were studied using glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM) respectively. It was found that grain size, average surface roughness and interface width changes with different substrates. Higuchi algorithm is applied for the fractal measure on AFM images.It was observed found that the fractal dimension varied from substrate to substrate.
Thickness dependent rare earth segregation in magnetron deposited NdCo$_{4.6}$ thin films studied by Xray reflectivity and Hard Xray photoemission
Universidad de Oviedo（奥维耶多大学）；CINN (CSIC-Universidad de Oviedo)（凝聚态物质综合研究所（西班牙国家研究委员会-奥维耶多大学））；SpLine Spanish CRG Beamline at the ESRF（欧洲同步辐射装置 SpLine 西班牙 CRG 光束线）；Instituto de Ciencia de Materiales de Madrid-ICMM/CSIC（马德里物质科学研究所）
In this work, we studied amorphous carbon ($a$-C) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) techniques. The microstructure and electronic properties reveal subtle differences in $a$-C thin films deposited by two techniques. While, films deposited with dcMS have a smooth texture typically found in $a$-C thin films, those deposited with HiPIMS consist of dense hillocks surrounded by a porous microstructure. The density of $a$-C thin films is a decisive parameter to judge their quality. Often, x-ray reflectivity (XRR) has been used to meas…
Antiferromagnetic (AFM) skyrmions are envisioned as ideal localized topological magnetic bits in future information technologies. In contrast to ferromagnetic (FM) skyrmions, they are immune to the skyrmion Hall effect, might offer potential terahertz dynamics while being insensitive to external magnetic fields and dipolar interactions. Although observed in synthetic AFM structures and as complex meronic textures in intrinsic AFM bulk materials, their realization in non-synthetic AFM films, of crucial importance in racetrack concepts, has been elusive. Here, we unveil their presence in a row-w…
We report an interesting magnetic behavior of a Co film (thickness ~ 350 Å) grown on Si/Ti/Cu buffer layer by electro-deposition (ED) technique. Using depth sensitive X-ray reflectivity and polarized neutron reflectivity (PNR) we observed two layer structures for the Co film grown by ED with a surface layer (thickness ~ 100 Å) of reduced density (~ 68% of bulk) compared to rest of the Co film (thickness ~ 250 Å). The two layer structure is consistent with the histogram profile obtained from atomic force microscope (AFM) of the film. Interestingly, using PNR, we found that the magnetization in …
Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential.
Synchrotron-based x-ray reflectivity is increasingly employed as an \textit{in situ} probe of surface morphology during thin film growth, but complete interpretation of the results requires modeling the growth process. Many models have been developed and employed for this purpose, yet no detailed, comparative studies of their scope and accuracy exists in the literature. Using experimental data obtained from hyperthermal deposition of pentane and diindenoperylene (DIP) on SiO$_2$, we compare and contrast three such models, both with each other and with detailed characterization of the surface m…
Thin films of magnesium doped zinc oxide (MZO) were synthesized using the sol gel method and annealed at different temperatures under ambient condition. The morphological properties of the post annealed MZO films were investigated using X ray diffraction (XRD) while atomic force microscopy (AFM) was employed to probe the topographical alteration of the films. The optical properties of the post annealed MZO films were examined by UV visible spectroscopy and the Tauc method was used to estimate the optical band gap. The studies revealed that, with the rise of annealing temperature the crystallin…
Aiming at fabrication of hybrid plasmonic-photonic crystals, gel-immobilized colloidal crystals made of a polystyrene colloidal suspension and an N-(Hydroxy methyl)acrylamid-based gel were immersed into an aqueous dispersion of gold nanoparticles. Atomic force microscope (AFM) observations have been performed for the gel-immobilized colloidal crystals with gold nanoparticles deposited on their surfaces. In the present study, the diameter of a colloidal sphere was c.a. 190 nm. The diameter of a gold nanoparticle was the same as in a preliminary study, c.a. 40 nm. Various immersion times up to t…
In this work, we studied cobalt nitride (Co-N) thin films deposited using a dc magnetron sputtering method at a substrate temperature (\Ts) of 523\,K. We find that independent of the reactive gas flow (\pn) used during sputtering, the phases of Co-N formed at this temperature seems to be identical having N \pat~$\sim$5. This is contrary to Co-N phases formed at lower \Ts. For \Ts$\sim$300\,K, an evolution of Co-N phases starting from Co(N)$\rightarrow$\tcn$\rightarrow$Co$_3$N$\rightarrow$CoN can be seen as \pn increases to 100\p, whereas when the substrate temperature increases to 523\,K, the …
The magnetic properties of BaFe$_{2}$As$_{2}$(001) surface have been studied by using first-principles electronic structure calculations. We find that for As-terminated surface the magnetic ground state of the top-layer FeAs is in the staggered dimer antiferromagnetic (AFM) order, while for Ba-terminated surface the collinear (single stripe) AFM order is the most stable. When a certain coverage of Ba or K atoms are deposited onto the As-terminated surface, the calculated energy differences among different AFM orders for the top-layer FeAs on BaFe$_{2}$As$_{2}$(001) can be much reduced, indicat…
During the growth of metal thin films on dielectric substrates at a given deposition temperature T, the film's morphology is conditioned by the magnitude and asymmetry of up- and downhill diffusion. Any severe change of this mechanism leads to a growth instability, which induces an alteration of the thin film morphology. In order to study this mechanism, ultra-thin Pt films were deposited via pulsed laser deposition (PLD) onto yttria-stabilized-zirconia single crystals at different deposition temperatures. The morphological evolution of Pt thin films has been investigated by means of scanning …
The magnetic and magnetotransport properties of single crystalline La1-x-yPryCaxMnO3 (x=0.42, y=0.40) thin films (~140 nm) deposited on (110) oriented LaAlO3 and SrTiO3 substrates exhibit a crossover from the high temperature antiferromagnetic-charge ordered insulator (AFM-COI) phase (T>TN) to strain glass (T<Tg). At intermediate temperatures (Tg<T<TN) dynamical liquid having prominent thermal-magneto-resistive hysteresis dominates in the cooling cycle, while in the warming cycle it is preceded by ferromagnetic metal (FMM) phase. Magnetic field required to drive AFM-COI to FMM phase transition…
Bi(0001) films with thicknesses up to several bilayers (BLs) are grown on Se-terminated Bi$_2$Se$_3$(0001) surfaces, and low energy electron diffraction (LEED), low energy ion scattering (LEIS) and atomic force microscopy (AFM) are used to investigate the surface composition, topography and atomic structure. For a single deposited Bi BL, the lattice constant matches that of the substrate and the Bi atoms adjacent to the uppermost Se atoms are located at fcc-like sites. When a 2nd Bi bilayer is deposited, it is incommensurate with the substrate. As the thickness of the deposited Bi film increas…
Zinc nitride films were synthesized by reactive radio frequency (rf) magnetron sputtering of a zinc target using an Ar+N2 mixture. The as-deposited films were annealed in the air and O2 at 300 °C for 1 hr. The XRD measurements indicated that the films had a polycrystalline structure with a preferred (400) Zn3N2 orientation. The annealing process enhanced the crystallinity. After annealing, the AFM and SEM morphology revealed no significant change in the surface morphology and surface roughness. The direct bandgap of Zn3N2 was estimated to be in the range of 1.15 -1.35 eV where annealing result…
Amorphous boron carbide (B4C) thin films are by far the most popular form for the neutron converting layers in the 10B-based neutron detectors, which are a rising trend in detector technologies in response to the increasing scarcity and price of 3He, the standard material for neutron detection. The microstructure of the B4C films is closely related to the important properties, e.g. density and adhesion, for the converting layers, which eventually affect the detection efficiency and the long-term stability of the detectors. To study the influence from substrates of different roughness and mater…
Highly conducting $SnO_{2}$ thin films were prepared by chemical spray pyrolysis technique. One set of as-deposited films were annealed in air for 2 h at 850$^{o}$C. These as-deposited and annealed films were irradiated using $Au^{9+}$ ions with energy of 120 MeV at different fluences ranging from $1\times10^{11}$ to $3\times10^{13}$ $ions/cm^{2}$. Electrical measurement shows that as-deposited $SnO_{2}$ films are in conducting state with n = $3.164 \times 10^{20}$ $cm^{-3}$ and annealed $SnO_{2}$ films are in insulating state. The amorphized latent tracks are created only above a certain thre…
Fractal dimension (D) is an effective parameter to represent the irregularity and fragmental property of a self-affine surface, which is common in physical vapor deposited thin films. D could be evaluated through the scaling performance of surface roughness by using atomic force microscopy (AFM) measurements, but lots of AFM images with different scales (L) are needed. In this study, a surface roughness prediction (SRP) method was proposed to evaluate D values of a single AFM image, in which the roughness at smaller L was estimated by image segmentation with flatten modification. Firstly, a se…
We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a visible blind deep UV detector, with GaN based heterostructure as the substrate. The film deposited in the solution medium, at less than 200 C, using a metalorganic precursor, was nanocrystalline. XRD confirms that as deposited film when annealed at high temperature turns polycrystalline beta gallium oxide. SEM shows the as deposited film to be uniform, with a surface roughness of 4 to 5 nm, as revealed by AFM. Inte…
Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as the films treated in a hydrogen plasma, have been investigated in the temperature range 1.5-300 K. The observed temperature dependences of resistivity were typical for metallic transport of electrons except temperature dependence of resistivity of the In$_2$O$_3$:Sn film deposited in the oxygen deficient atmosphere. The electron concentration and mobility for the film deposited at 230$^\circ$C was larger than that for…
We have deposited Co films on the GaAs(001) surface by using an e-beam evaporation method. The thicknesses of the Co films are measured by using x-ray reflectivity and Rutherford backscattering. The magnetic properties of the films have been measured using superconducting quantum interference device. The magnetization of the films was found to decrease with increasing film thickness. The slight degradation of magnetic properties is attributed to increasing roughness on the Co surface or the Co/GaAs interface during the Co deposition.
Silver (Ag) mirrors for astronomical telescopes consist of multiple metallic and dielectric thin films. Furthermore, the topmost surface of such Ag mirrors needs to be covered by a protection coating. While the protection coating is often deposited at room temperature and the entire mirrors are also handled at room temperature, various thin film deposition techniques offer protection coatings with improved characteristics when carried out at elevated temperatures. Thus, in this work, high-performance Ag mirrors were designed and fabricated with a new benchmark. The resulting Ag mirrors were an…
Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using X-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants shows very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer Mo…
Stretchable conductors are of crucial relevance for emerging technologies such as wearable electronics, low-invasive bioelectronic implants or soft actuators for robotics. A critical issue for their development regards the understanding of defect formation and fracture of conducting pathways during stress-strain cycles. Here we present a novel atomic force microscopy (AFM) method that provides multichannel images of surface morphology, conductivity, and elastic modulus during sample deformation. To develop the method, we investigate in detail the mechanical interactions between the AFM tip and…
Nanostructures of Titanium oxide (TiO2) are being studied for many promising applications, e.g., solar photovoltaics, solar water splitting for H2 fuel generation etc., due to their excellent photo-catalytic properties. We have synthesized low-dimensional TiO2 nanoparticles by gas phase CW CO2 laser pyrolysis. The laser synthesis process has been optimized for the deposition of highly pure, nearly mono-dispersed TiO2 nanoparticles on silicon substrates. Hard x-ray standing wave-field (XSW) measurements in total reflection geometry were carried out on the BL-16 beamline of Indus-2 synchrotron r…
This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure of N$_2$ gas, ion energy (\Ei) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature (300\,K). At the optimum partial pressure of N$_2$ gas, samples were prepared with or without Ti interface at \Ei~=~1.0 or 0.5\,keV. They were characterized using x-ray reflectivity (XRR) to deduce thickness, roughness and density. The roughness of TiN thin films was found to be below 1\,nm, when deposited at the lower \Ei~of 0.5\,keV and when interfaced with a …
Using two different experimental techniques, namely, chemical vapor deposition (CVD) and physical vapor deposition (PVD), we deposited a Lead sulphide (PbS) thin films with a very small lifetime. We investigated the morphology of the obtained PbS films using various techniques i.e.AFM, SEM, EDAX, AES and HRTEM . In the case of CVD, we found that the surface consists of grains with dimensions in the plane (diameter to 300 nm and height up to 200 nm), while the same order of the grain size has been observed for PVD. On the other hand, SEM investigation reveals that the PbS particles with various…
The large Landé g-factor, high spin-orbit coupling, and low effective mass of the two-dimensional electron gas in InSb quantum wells combined with proximal superconductivity may realize a scalable platform for topological quantum computation. Aluminum thin films directly deposited on top of InSb planar structures result in the formation of a reactive AlInSb layer at the interface. This interlayer progressively consumes the whole Al film, resulting in a disordered AlInSb layer after few months at room temperature. We report on a heterostructure design that results in a significant increase of t…
Superconducting Nb3Sn films can be synthesized by controlling the atomic concentration of Sn. Multilayer sequential sputtering of Nb and Sn thin films followed by high temperature annealing is considered as a method to fabricate Nb3Sn films, where the Sn composition of the deposited films can be controlled by the thickness of alternating Nb and Sn layers. We report on the structural, morphological and superconducting properties of Nb3Sn films fabricated by multilayer sequential sputtering of Nb and Sn films on sapphire substrates followed by annealing at 950 °C for 3 h. We have investigated th…
Current nanostructure fabrication by etching is usually limited to planar structures as they are defined by a planar mask. The realisation of three-dimensional (3D) nanostructures by etching requires technologies beyond planar masks. We present a method to fabricate a 3D mask that allows to etch three-dimensional monolithic nanostructures by using only CMOS-compatible processes. The mask is written in a hard-mask layer that is deposited on two adjacent inclined surfaces of a Si wafer. By projecting in single step two different 2D patterns within one 3D mask on the two inclined surfaces, the mu…
The stability of a metal thin films on a dielectric substrate is conditioned by the magnitude of the interactive forces at the interface. In the case of a non-reactive interface and weak adhesion, the minimization of free surface energy gives rise to an instability of the thin film. In order to study these effects, Pt thin films with a thickness of 50 nm were deposited via ion-beam sputtering on yttria stabilized zirconia single crystals. All Pt films were subjected to heat treatments up to 973 K for 2 h. The morphological evolution of Pt thin films has been investigated by means of scanning e…
