We report a theoretical study on the spin and electron transport in the nonlocal lateral spin valve with non-collinear magnetic configuration. The nonlocal magnetoresistance, defined as the voltage difference on the detection lead over the injected current, is derived analytically. The spin transfer torques on the detection lead are calculated. It is found that spin transfer torques are symmetrical for parallel and antiparallel magnetic configurations, which is different from that in conventional sandwiched spin valve.
Current-driven spin torques in metallic spin-valves composed of antiferromagnets are theoretically studied using the non-equilibrium Green's function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin-valve, the coherent and exchange torques can be either in the plane, α…
This article discusses the spin-torque effect in a spin-valve made out of two ferromagnetic leads connected through a coherent nanoconductor (NC), in the limit where a single channel of the NC lies near the Fermi energy of the leads. Due to quantum interferences inside the NC, the spin-torque presents clear qualitative differences with respect to the case of a multichannel disordered spin-valve. In particular, it can be modulated with the NC gate voltage. In principle, this modulation can be observed experimentally, assuming that the spin-torque affects a ferromagnetic nano-domain in direct co…
The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin current flowing into an additional ferromagnetic wire, is typically of the order of 1 μV. Here we show that lateral spin valves with low resistive NiFe/MgO/Ag junctions enable the efficient spin injection with high applied current density, which leads to the spin valve voltage increased hundredfold. Hanle effect measurements demonstrate a long-distance collec…
We measured the anomalous-Nernst effect and anisotropic magnetoresistive heating in a lateral multiterminal Permalloy/Copper spin valve using all-electrical lock-in measurements. To interpret the results, a three-dimensional thermoelectric finite-element-model is developed. Using this model, we extract the heat profile which we use to determine the anomalous Nernst coefficient of Permalloy Rn=0.13 and also determine the maximum angle of theta=8 degrees of the magnetization prior to the switching process when an opposing non-collinear 10$^{\circ}$ magnetic field is applied.
We predict that due to spin-orbit(SO) interaction there is a torque even for the parallel configuration of spin valve structure (F1/2DEG/F2). This torque arises due to spin orbit interaction. We develop a scattering theory for spin density matrix which allows us to study this effect quantitatively. Further we show that the von-Neumann entropy associated with transport of polarization can show non-linear behavior as a function of absolute angle and oscillator behavior as a function of SO interaction strength.
We employ the spin absorption technique in lateral spin valves to extract the spin diffusion length of Permalloy (Py) as a function of temperature and resistivity. A linear dependence of the spin diffusion length with conductivity of Py is observed, evidencing that Elliott-Yafet is the dominant spin relaxation mechanism in Permalloy. Completing the data set with additional data found in literature, we obtain $λ_{Py}= (0.91\pm 0.04) (fΩm^2)/ρ_{Py}$.
We consider current-induced spin-transfer torque on an antiferromagnet in a dual spin-valve setup. It is demonstrated that a net magnetization may be induced in the AFM by partially or completely aligning the sublattice magnetizations via a current-induced spin-transfer torque. This effect occurs for current densities ranging below 10$^6$ A/cm$^2$. The direction of the induced magnetization in the AFM is shown to be efficiently controlled by means of the magnetic configuration of the spin-valve setup, with the anti-parallell configuration yielding the largest spin-transfer torque. Interestingl…
The miniaturisation of magnetic read heads and random access memory elements makes them vulnerable to thermal fluctuations. We demonstrate how current-induced spin-transfer torques can be used to suppress the effects of thermal fluctuations. This enhances the fidelity of perpendicular magnetic spin valves. The simplest realization is a dc current to stabilize the free magnetic layers. The power can be significantly reduced without losing fidelity by simple control schemes, in which the stabilizing current-induced spin-transfer torque is controlled by the instantaneous resistance.
A high reproducibility in the performance of cobalt/copper and permalloy/copper lateral spin valves with transparent contacts is obtained by optimizing the interface quality and the purity of copper. This allows us to study comprehensively the spin injection properties of both ferromagnetic materials, as well as the spin transport properties of copper, which are not affected by the used ferromagnetic material, leading to long spin diffusion lengths. Spin polarizations of permalloy and cobalt are obtained as a function of temperature. Analysis of the temperature dependence of both the spin pola…
The role of the growth conditions in the spin transport properties of silver (Ag) have been studied by using lateral spin valve structures. By changing the deposition conditions of Ag from polycrystalline to epitaxial growth, we have observed a considerable enhancement of the spin diffusion length, from $λ_{Ag}$ = 449 $\pm$ 30 to 823 $\pm$ 59 nm. This study shows that diminishing the grain boundary contribution to the spin relaxation mechanism is an effective way to improve the spin diffusion length in metallic nanostructures.
We have succeeded in fully describing dynamic properties of spin current including the different spin absorption mechanism for longitudinal and transverse spins in lateral spin valves, which enables to elucidate intrinsic spin transport and relaxation mechanism in the nonmagnet. The deduced spin lifetimes are found independent of the contact type. From the transit-time distribution of spin current extracted from the Fourier transform in Hanle measurement data, the velocity of the spin current in Ag with Py/Ag Ohmic contact turns out much faster than that expected from the widely used model.
We study spin transport in lateral spin valves with constricted channels. Using electromigration, we modulate the spin accumulation by continuously varying the width of the non-magnetic channel at a single location. By fitting the non-local spin signal data as a function of the non-magnetic channel resistance, we extract all the relevant parameters regarding spin transport from a single device. Simulations show that constricting the channel blocks the diffusion of the accumulated spins rather than causing spin flipping. This result could be used to improve the design of future spintronic devic…
We propose a possible experimental setup for nonreciprocal electron transport in a lateral spin valve due to noncoplanar distribution of magnetic moment (and field) in the system. Some metals (Al, Cu) and semiconductors (GaAs, InSb etc.) demonstrate spin accumulation even at room temperatures due to large spin flip lengths (0.3--2.0 $μm$). The Hanle precession was observed in lateral spin valves based on such materials and two parallel magnetic electrodes. We provide theoretical estimations which show that the nonreciprocal effect in a configuration with non-parallel magnetic electrodes is of …
The spin injection and accumulation in metallic lateral spin valves with transparent interfaces is studied using d.c. injection current. Unlike a.c.-based techniques, this allows investigating the effects of the direction and magnitude of the injected current. We find that the spin accumulation is reversed by changing the direction of the injected current, whereas its magnitude does not change. The injection mechanism for both current directions is thus perfectly symmetric, leading to the same spin injection efficiency for both spin types. This result is accounted for by a spin-dependent diffu…
We theoretically study the spin current and spin-transfer torque generation in a conventional spin- valve hybrid structure of type ferromagnetic/normal metal/ferromagnetic (FM/NM/FM) made of the topological insulator (TI), in which a gate voltage is attached to the normal layer. We demonstrate the penetration of the spin-transfer torque into the right ferromagnetic layer and show that, unlike graphene spin-valve junction, the spin-transfer torque in TI is very sensitive to the chemical potential of the NM region. As an important result, by changing the chemical potential of the NM spacer and m…
The temperature dependence of the spin diffusion length typically reflects the scattering mechanism responsible for spin relaxation. Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to play a role and thus the temperature dependence of the spin diffusion length might be inversely proportional to resistivity. In lateral spin valves measurements have found that at low temperatures the spin diffusion length unexpected decreases. By measuring the transport properties of lateral Py/Cu/Py spin valves fabricated with different purities of Cu, we extract a spin diffusio…
We propose model magneto-logic NOR and NAND gates using a spin valve pillar, wherein the logical operation is induced by spin-polarized currents which also form the logical inputs. The operation is facilitated by the simultaneous presence of a constant controlling magnetic field. The same spin-valve assembly can also be used as a magnetic memory unit. We identify regions in the parameter space of the system where the logical operations can be effectively performed. The proposed gates retain the non-volatility of a magnetic random access memory,(MRAM). We verify the functioning of the gate by n…
The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can give rise to detrimental effects such as spin relaxation and decoherence. Here, we use an all-electrical, lateral GaAs spin valve to manipulate and investigate the inherent nuclear spin system. Hanle satellites are used to determine the nuclear spin relaxation rates for the previously unexplored temperature range down to 100 mK, giving T1 times as long as 3 hou…
The spin-transfer torque (STT) in Co2MnSi(CMS)/Al/Co2MnSi spin-valve system with and without interfacial disorder is studied by a first-principles noncollinear wave-function-matching method. It is shown that in the case of clean interface the angular dependence of STT for CoCo/Al (the asymmetry parameter Lambda approx. 4.5) is more skewed than that for MnSi/Al (Lambda approx. 2.9), which suggests the clean CoCo/Al architecture is much more efficient for the application on radio frequency oscillation. We also find that even with interfacial disorder the spin-valve of half-metallic CMS still has…
The spin transport and spin-to-charge current conversion properties of bismuth are investigated using permalloy/copper/bismuth (Py/Cu/Bi)lateral spin valve structures. The spin current is strongly absorbed at the surface of Bi, leading to ultra-short spin diffusion lengths. A spin-to-charge current conversion is measured, which is attributed to the inverse Rashba-Edelstein effect at the Cu/Bi interface. The spin-current-induced charge current is found to change direction with increasing temperature. A theoretical analysis relates this behavior to the complex spin structure and dispersion of th…
Spin valves incorporating perpendicularly magnetized materials are promising structures for memory elements and high-frequency generators. We report the angular dependence of the spin-transfer torque in spin valves with perpendicular equilibrium magnetization computed by first-principles circuit theory and compare results with experiments by W.H. Rippard c.s. [Phys. Rev. B 81, 014426 (2010)] on the CoFe|Cu|CoNi system. Furthermore, we predict a non-monotonous ("wavy") spin-transfer torque when the Cu spacer is replaced by a Ru layer.
Spin-transfer torque and current induced spin dynamics in spin-valve nanopillars with the free magnetic layer located between two magnetic films of fixed magnetic moments is considered theoretically. The spin-transfer torque in the limit of diffusive spin transport is calculated as a function of magnetic configuration. It is shown that non-collinear magnetic configuration of the outermost magnetic layers has a strong influence on the spin torque and spin dynamics of the central free layer. Employing macrospin simulations we make some predictions on the free layer spin dynamics in spin valves c…
Spin transfer torque in spin valves usually destabilizes one of the collinear configurations (either parallel or antiparallel) and stabilizes the second one. Apart from this, balance of the spin-transfer and damping torques can lead to steady precessional modes. In this letter we show that in some asymmetric nanopillars spin current can destabilize both parallel and antiparallel configurations. As a result, stationary precessional modes can occur at zero magnetic field. The corresponding phase diagram as well as frequencies of the precessional modes have been calculated in the framework of mac…
Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide proof of principle of an electrical detection scheme of spin-charge conversion that enables full disentanglement of competing spin-orbit coupling transport phenomena in diffusive lateral channels i.e. the inverse spin Hall effect (ISHE) and the spin galvanic effect (SGE). A suitable detection geometry in an applied oblique magnetic field is shown to provide direct access to spin-charge transport coefficients through a simple symme…
Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the inverse Rashba-Edelstein effect can be measured in pristine graphene possessing negligible spin-orbit couplin…
We report the successful fabrication of lateral organic spin valves with a channel length in the sub $100\,nm$ regime. The fabication process is based on in-situ shadow evaporation under UHV conditions and therefore yields clean and oxygen-free interfaces between the ferromagnetic metallic electrodes and the organic semiconductor. The spin valve devices consist of Nickel and Cobalt-iron electrodes and the high mobility \emph{n}-type organic semiconductor $N,N'$-bis(heptafluorobutyl)-$3,4:9,10$-perylene diimide. Our studies comprise fundamental investigations of the process' and materials' suit…
We study the nonlocal spin transport in a lateral spin valve with multiple ferromagnetic (FM) electrodes. When two current-injecting and two spin current-detecting electrodes are all ferromagnetic, the number of possible nonlocal spin signal states is four at maximum. In reality, this number is reduced, depending on the inter-probe distance and the relative magnitudes of the spin resistances. Our theoretical results are in agreement with recent experiments of spin injection into an Al island, a carbon nanotube, and graphene.
We investigate the relation between thermal spin-transfer torque (TSTT) and the spin-dependent Seebeck effect (SDSE), which produces a spin current when a temperature gradient is applied across a metallic ferromagnet, in nanopillar metallic spin valves. Comparing its angular dependence (aSDSE) with the angle dependent magnetoresistance (aMR) measurements on the same device, we are able to verify that a small spin heat accumulation builds up in our devices. From the SDSE measurement and the observed current driven STT switching current of 0.8 mA in our spin valve devices, it was estimated that …
We performed non-local electrical measurements of a series of Py/Cu lateral spin valve devices with different Cu thicknesses. We show that both the spin diffusion length of Cu and the apparent spin polarization of Py increase with Cu thickness. By fitting the results to a modified spin-diffusion model, we show that the spin diffusion length of Cu is dominated by spin-flip scattering at the surface. In addition, the dependence of spin polarization of Py on Cu thickness is due to a strong spin-flip scattering at the Py/Cu interface.
The spin transfer torque in all-metal dual spin valve, in which two antiparallelly aligned pinned ferromagnetic layers are on the two sides of a free ferromagnetic layer with two thin nonmagnetic spacers in between, is studied in the ballistic regime. It is argued that, similar to the results in the diffusion regime, the spin transfer torque is dramatically enhanced in comparison to that in a conventional spin valve although no spin accumulation exists at the magnetic-nonmagnetic interfaces. Within the Slonczewski's approach, an analytical expression of the torque on the free magnetic layer is…
We study the effect of the ferromagnetic (FM) contacts on the spin accumulation in the lateral spin valve system for the collinear magnetization configurations. When an additional FM electrode is introduced in the all-metallic lateral spin-valve system, we find that the transresistance can be fractionally suppressed or very weakly influenced depending on the position of the additional FM electrode, and relative magnitudes of contact resistance and the bulk resistance defined over the spin diffusion length. Nonlocal spin signals such as nonlocal voltage drop and leakage spin currents are indepe…
The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orientation dependence of the spin absorption inCo, CoFe and NiFe. These experiments allow determining the spin-mixing conductance, an elusivebut fundamental parameter of the spin-dependent transport. We show that the obtained valuescannot be understood within a model considering only the Larmor, transverse decoherence and spindiffusion lengths, and rath…
A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin-valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required.
We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear behavior below 50 K, indicating that tunnel transport through the MnGa/GaAs Schottky barrier is dominant at low temperatures. We observed clear magnetoresistance (MR) ratio up to 12% at 4 K when applying a magnetic field perpendicular to the film plane. Furthermore, a large spin-dependent output voltage of 33 mV is obtained. These values are the highest in lat…
We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au based lateral nano-structures at both $300\,K$ and $77\,K$. Both the analytic modeling and 3D Finite Element Method simulations give consistent results. Combination of both models provides a powerful tool…
Magnetization switching due to a current-pulse in symmetric and asymmetric spin valves is studied theoretically within the macrospin model. The switching process and the corresponding switching parameters are shown to depend significantly on the pulse duration and also on the interplay of the torques due to spin transfer and external magnetic field. This interplay leads to peculiar features in the corresponding phase diagram. These features in standard spin valves, where the spin transfer torque stabilizes one of the magnetic configurations (either parallel or antiparallel) and destabilizes th…
We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin-accumulation signal can show nonmonotonic variations, including a sign inversion. A part of the nonmonotonic features can be understood qualitatively by considering the rapid reduction in the spin polarization of the FM/SC interfaces with increasing bias voltage. In addition to the sign inversion of the FM/SC interface spin polarization, the influe…
We demonstrate first measurements of successful spin generation in crystalline Co$_2$FeSi/MgO/GaAs hybrid structures grown by molecular-beam epitaxy (MBE), with different MgO interlayer thicknesses. Using non-local spin valve and non-local Hanle measurement configurations, we determine spin lifetimes of ${τ\approx 100}$~ns and spin diffusion lengths of ${λ\approx 5.6}$~$μ$m for different MgO layer thicknesses proving the high quality of the GaAs transport channel. For an optimized MgO layer thickness, the bias dependence of the spin valve signals indicates the verification of the half-metallic…
The spin lifetime anisotropy is an important quantity for investigating the spin relaxation mechanisms in graphene and in heterostructures of two-dimensional materials. We generalize the diffusive spin transport equations of oblique spin precession in a lateral spin valve with finite contact resistance. This yields a method to determine the spin lifetime anisotropy ratio ξ=τ$_{\perp}$/τ$_{\parallel}$, which is the ratio between lifetimes of spin polarized perpendicular and parallel to the graphene surface. By solving the steady-state Bloch equations, we show that the line-shape of the oblique …
Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the non-local magnetoresistance is estimated to be 0.0057 ohm at room temperature. As a result, a clear rectangle signal is observed in local magnetoresistance measurement even at room temperature. We also investigate the origin of local magnetoresistance by measuring the spin accumulation voltage of each contact separately.
We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its magnitude is comparable to that of a conventional fixed Cu lateral spin valve. The spin diffusion length in the suspended Cu channel is estimated to be 340 nm at room temperature from the spin signal dependence on the distance between the ferromagnetic injector and detector electrodes. This value is found to be slightly shorter than in a fixed Cu. The decre…
Spin-torque driven ferromagnetic resonance (ST-FMR) is used to study thin Co/Ni synthetic layers with perpendicular anisotropy confined in spin-valve based nanojunctions. Field swept ST-FMR measurements were conducted with a magnetic field applied perpendicular to the layer surface. The resonance lines were measured under low amplitude rf excitation, from 1 to 20 GHz. These results are compared with those obtained using conventional rf field driven FMR on extended films with the same Co/Ni layer structure. The layers confined in spin valves have a lower resonance field, a narrower resonance li…
We report time-resolved measurements of current-induced reversal of a free magnetic layer in Py/Cu/Py elliptical nanopillars at temperatures T = 4.2 K to 160 K. Comparison of the data to Landau-Lifshitz-Gilbert macrospin simulations of the free layer switching yields numerical values for the spin torque and the Gilbert damping parameters as functions of T. The damping is strongly T-dependent, which we attribute to the antiferromagnetic pinning behavior of a thin permalloy oxide layer around the perimeter of the free layer. This adventitious antiferromagnetic pinning layer can have a major impa…
Thermally-driven spin-transfer torques have recently been reported in electrically insulating ferromagnet$|$normal-metal heterostructures. In this paper, we propose two physically distinct mechanisms for such torques. The first is a local effect: out-of-equilibrium, thermally-activated magnons in the ferromagnet, driven by a spin Seebeck effect, exert a torque on the magnetization via magnon-magnon scattering with coherent dynamics. The second is a nonlocal effect which requires an additional magnetic layer to provide the symmetry breaking necessary to realize a thermal torque. The simplest st…
We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via the lateral stray fields of the two magnetic layers. Starting from the parallel state the Oersted field rotates the magnetization vectors of both magnetic layers in opposite directions so far off the wire axis that the dipolar coupling becomes strong enough to stabilize an antiparallel configuration. As simulations and experiments show this coupling is only…
We report the temperature dependence of the effective spin-mixing conductance between a normal metal (aluminium, Al) and a magnetic insulator ($\text{Y}_3\text{Fe}_5\text{O}_{12}$, YIG). Non-local spin valve devices, using Al as the spin transport channel, were fabricated on top of YIG and SiO$_2$ substrates. By comparing the spin relaxation lengths in the Al channel on the two different substrates, we calculate the effective spin-mixing conductance ($G_\text{s}$) to be $3.3\times10^{12}$~$Ω^{-1}\text{m}^{-2}$ at 293~K for the Al/YIG interface. A decrease of up to 84\% in $G_\text{s}$ is obser…
Large heat currents are obtained in Co/Cu/Co spin valves positioned at the middle of Cu nanowires. The second harmonic voltage response to an applied current is used to investigate the effect of the heat current on the switching of the spin valves. Both the switching field and the magnitude of the voltage response are found to be dependent on the heat current. These effects are evidence for a thermal spin transfer torque acting on the magnetization and are accounted for by a thermodynamic model in which heat, charge and spin currents are linked by Onsager reciprocity relations.
An anomalous (inverse) spin accumulation in the nonmagnetic spacer may build up when the spin valve consists of magnetic films having different spin symmetries. This leads to wavy-like dependence of spin-transfer torque on the angle between magnetizations, as predicted by spin-dependent diffusive transport model, and also confirmed experimentally. Making use of these predictions, we have numerically studied the magnetization dynamics in presence of such a wavy-torque in Co(8 nm)/Cu(10 nm)/Py(8 nm) nanopillar, considering geometry with extended and etched Co layer. In both cases we specify cond…
The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic parameter of this conversion. We have performed experiments of the conversion from spin into charge currents by the SHE in lateral spin valve structures. We present experimental results on the extrinsic SHEs induced by doping nonmagnetic metals, Cu or Ag, with impurities having a large spin-orbit coupling, Bi or Pb, as well as results on the intrinsic SHE of…
In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves para…
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free layer device switches much faster: the characteristic switching time for a permalloy free (Ni0.83Fe0.17) layer device is 1.18 ns, while that for a dilute permalloy ([Ni0.83Fe0.17]0.6Cu0.4) free layer device is 0.475 ns. A ballistic macrospin model can capture the data trends with a reduced spin torque asymmetry parameter, reduced spin polarization and incre…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than the corresponding DC one. The effect is understood as a consequence of the underdamped nature of the spin-torque oscillators. It allows to use the kinetic inertia to overcome the residual energy barrier, rather than suppressing the latter by a large spin current. The effect is similar to a swing which may be set into high amplitude motion by a weak near-resona…
Transport currents can alter alter order parameter dynamics and change steady states in superconductors, in ferromagnets, and in hybrid systems. In this article we present a scheme for fully microscopic evaluation of order parameter dynamics that is intended for application to nanoscale systems. The approach relies on time-dependent mean-field-theory, on an adiabatic approximation, and on the use of non-equilibrium Greens function (NEGF) theory to calculate the influence of a bias voltage across a system on its steady-state density matrix. We apply this scheme to examine the spin-transfer torq…
Spin-torque driven ferromagnetic resonance (ST-FMR) is used to study magnetic excitations in Co/Ni synthetic layers confined in nanojunctions. Field swept ST-FMR measurements were conducted with a magnetic field applied perpendicular to the layer surface. The resonance lines were measured under low amplitude excitation in a linear response regime. The resulting resonance fields were compared with those obtained using conventional rf field driven FMR on extended films with the same Co/Ni layer structure. A lower resonance field is found in confined structures. The effect of both dipolar fields …
We use a ferromagnetic voltage probe model to study the influence of inelastic scattering on giant magnetoresistance and current-induced torques in ferromagnetic and antiferromagnetic metal spin valves. The model is based on the Green's function formulation of transport theory and represents spin-dependent and spin-independent inelastic scatterers by interior voltage probes that are constrained to carry respectively no charge current and no spin or charge current. We find that giant magnetoresistance and spin transfer torques in ferromagnetic metal spin valve structures survive arbitrarily str…
We investigate the angular dependence of the spin torque generated when applying a temperature difference across a spin-valve. Our study shows the presence of a non-trivial fixed point in this angular dependence, i.e. the possibility for a temperature gradient to stabilize radio frequency oscillations without the need for an external magnetic field. This so called "wavy" behavior can already be found upon applying a voltage difference across a spin-valve but we find that this effect is much more pronounced with a temperature difference. Our semi-classical theory is parametrized with experiment…
We study interaction effects on transport through a small metallic cluster connected to two ferromagnetic leads (a single-electron spin-valve transistor) in the "orthodox model" for the Coulomb blockade. The non-local exchange between the spin accumulation on the island and the ferromagnetic leads is shown to affect the transport properties such as the electric current and spin-transfer torque as a function of the magnetic configuration, gate voltage, and applied magnetic field.
We use atomistic stochastic Landau-Lifshitz-Slonczewski simulations to study the interaction between large thermal fluctuations and spin transfer torques in the magnetic layers of spin valves. At temperatures near the Curie temperature $T_{\rm C}$, spin currents measurably change the size of the magnetization (i.e. there is a {\it longitudinal} spin transfer effect). The change in magnetization of the free magnetic layer in a spin valve modifies the temperature dependence of the applied field-applied current phase diagram for temperatures near $T_{\rm C}$. These atomistic simulations can be ac…
We explore thermoelectric spin transport and spin dependent phenomena in a non-collinear quantum dot spin valve set up. Using this set up, we demonstrate the possibility of a thermoelectric excitation of single spin dynamics inside the quantum dot. Many-body exchange fields generated on the single spins in this set up manifest as effective magnetic fields acting on the net spin accumulation in the quantum dot. We first identify generic conditions by which a zero bias spin accumulation in the dot may be created in the thermoelectric regime. The resulting spin accumulation is then shown to be su…
We report on the combination of current-induced spin-orbit torques and giant magnetoresistance in a single device to achieve all-electrical write and read out of the magnetization. The device consists of perpendicularly magnetized TbCo and Co layers separated by a Pt or Cu spacer. Current injection through such layers exerts spin-orbit torques and switches the magnetization of the Co layer while the TbCo magnetization remains fixed. Subsequent current injection of lower amplitude senses the relative orientation of the magnetization of the Co and TbCo layers, which results in two distinct resis…
