There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus on composites coupled by magnetostrictive and piezoelectric strain transmitted across ferromagnetic-ferroelectric interfaces, but substrate clamping limits the response in the supported multilayer configuration favoured for devices. This constraint is avoided in a ferroelectric-ferromagnetic bilayer in which the magnetic response is modulated by the electric field of the poled ferroelectric. Here, we report the realization of such a device using a diluted magnetic semiconductor (DMS) channel and a polymer ferroelectric gate. Polarization reversal of the gate by a single voltage pulse results in a persistent modulation of the Curie temperature as large as 5%. The device demonstrates direct and quantitatively understood electric-fieldmediated coupling in a multiferroic bilayer and may provide new routes to nanostructured DMS materials and devices via ferroelectric domain nanopatterning. The successful implementation of a polymer-ferroelectric gate fieldeffect transistor (FeFET) with a DMS channel adds a new functionality to semiconductor spintronics and may be of importance for future low-voltage spintronics devices and memory structures.
Nonvolatile ferroelectric control of topological states in 2D heterostructures
量子自旋霍尔（QSH）绝缘体材料具有拓扑保护的边缘状态，可以大大减少耗散，并可用于下一代电子学。然而，拓扑边缘状态的非易失性控制仍然是一个挑战。基于第一性原理计算，通过反转铁电体α-In 2 Se 3的电极化的强度，在二维Bi（111）双层（BL）和α-In 2 Se 3构成的范德华（vdW）异质结构中发现了可开关的拓扑态。这种拓扑开关是由于α-In 2Se 3的两种相反的极化状态引起的不同的电荷转移。这种新的拓扑开关机制具有独特的优点，是全电以及非易失性。我们的发现为实现二维材料中拓扑态的铁电控制提供了一种前所未有的方法，这将在拓扑纳米电子学中具有巨大的应用潜力。
Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories
Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide
Ferromagnetism and orbital order in a topological ferroelectric
我们探索通过密度泛函计算的磁性掺杂的拓扑铁电体作为一种非常规的路线，多铁性。层状钙钛矿La $_{2}$ Ti $_{2}$ O $_{7}$的钒掺杂在很大程度上保持了电极化的强度并产生了稳健的铁磁有序性，因此具有适当的多铁性。掺杂剂聚集成链的显著趋势导致在一般掺杂下的绝缘特性。铁磁性源于多轨道V系统通过不寻常的“反铁”轨道顺序的对称性破缺，以及宿主的低对称性层状结构。
Response to "Comment on Ferroelectrically induced weak ferromagnetism by design," by R. de Sousa and J. E. Moore, arXiv:0806.2142
最近的评论[arXiv：0806.2142]认为“在A位点和B位点”R3 c ABO $_3$材料之间存在简单的二元性，我们的信函[PRL 100，167203（2208）]“通过忽略晶体学中直接测量的非极性畸变打破了这种二元性。“在这里，我们指出这是不正确的。评论包含三个基本的晶体学错误。在这篇回应中，我们详细讨论了每个错误。
Coexistence of ferromagnetism and ferroelectricity in the van der Waals multiferroic CuIn0.2V0.8P2S6
D crystal consortium, Materials Research Institute, Pennsylvania State University（宾夕法尼亚州立大学材料研究所）；Department of Physics, Pennsylvania State University（宾夕法尼亚州立大学物理系）；Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland（马里兰大学电气与计算机工程系及量子技术中心）；Department of Chemistry, Michigan State University（密歇根州立大学化学系）；Department of Materials Science and Engineering, Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）
Machine-learning-identified two-dimensional van der Waals multiferroics for four-state nonvolatile memory
College of Physics and Optoelectronic Engineering, Shenzhen University（深圳大学物理与光电工程学院）；International School of Microelectronics, Dongguan University of Technology（东莞理工学院微电子学院）
Ferroelectric Band Twinning from Pair-State Symmetry
Singapore University of Technology and Design（新加坡科技设计大学）；University of Wollongong（伍伦贡大学）；Tiangong University（天津工业大学）；Xiangtan University（湘潭大学）；Beijing Institute of Technology（北京理工大学）
Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties
多铁性范德华（vdW）异质结构提供了一个令人兴奋的路线，对新的纳米电子学和自旋电子学器件技术。本文采用第一性原理密度泛函理论和量子输运模拟方法研究了由铁磁FeCl $_2$单层和铁电Sc $_2$ CO $_2$单层组成的多铁性VDW异质结构的电子和输运性质.研究表明，通过电调制Sc $_2$ CO $_2$的铁电极化状态，FeCl $_2$ /Sc $_2$ CO $_2$异质结构可以从半导体可逆地转变为半金属。有趣的是，半金属相表现出III型断裂带对准，这对于隧道场效应晶体管应用是有益的。我们进行了量子输运模拟，基于\emph{proof-of-concept}两端纳米器件，以证明全电控阀效应独特的非易失性铁电开关的异质结构。这些发现揭示了FeCl $_2$ /Sc $_2$ CO $_2$ vdW异质结构作为设计下一代最终紧凑的信息处理、数据存储和自旋电子器件的构建块的潜力。
Magnetic field driven enhanced ferroelectric switching in self-grown ferroelectric-ferromagnetic composite in the BiFeO3-BaTiO3 multiferroic alloy system
多年来，人们试图弥补多铁性BiFeO 3体相态的固有弱点，如高漏电流和铁磁相关性的缺乏，并通过与其他钙钛矿形成固溶体来利用其磁电势。近几年的研究表明，BiFeO_3与BaTiO_3的合金化，无论有无添加剂，都可以诱导铁电和铁磁开关。虽然从技术应用的角度来看，这两种铁性序的共存是令人鼓舞的，但该系统中铁磁性的起源仍然难以捉摸。在这里，我们合成了这样的组合物，并进行了详细的结构分析，采用磁性分离的粉末颗粒。我们发现，铁磁性的起源在于自发沉淀的一个小的（~ 1wt%）钡六角铁氧体（BaFe 9 O 19）相，通常未检测到在常规的X射线衍射研究从整个标本的粉末取样。我们还表明，尽管微不足道的分数的亚铁磁相，这种自生长的复合材料表现出显着增强的铁电开关在外部磁场的存在下。我们得到了一个直流磁电耦合~ 9 × 10-8 s/m，这是一个值，这是已报道的层状铁电/铁磁层压板和双层薄膜铁电-铁磁hetrostructures。我们的研究表明，合理的大磁电耦合是可实现的，在简单的0-3铁电-铁磁块状复合材料提供的合成策略的开发，诱导自发沉淀的铁磁相在小体积分数，以确保良好的绝缘行为的复合材料，从而开发。
Topological Hall Effect Induced by Chiral Spin Textures at the Ferroelectric/Ferromagnetic Interface
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University（南京大学物理学院固态微结构国家重点实验室，先进微结构协同创新中心）；Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所，北京凝聚态物理国家研究中心）
Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe$_3$GaTe$_2$
2D Ferroelectric Ruddlesden-Popper Perovskites: an Emerging Fully Electronically Controllable Shift Current and Persistent Spin Helix
North University of China（中北大学）；Institute of Materials Science, Technology University of Darmstadt（达姆施塔特工业大学材料科学研究所）；School of Microelectronics, Xidian University（西安电子科技大学微电子学院）
The atlas of ferroicity in two dimensional MGeX3 family: room-temperature ferromagnetic half metals and unexpected ferroelectricity and ferroelasticity
