发表机构
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University; Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences（南京大学物理学院固态微结构国家重点实验室，先进微结构协同创新中心; 中国科学院物理研究所，北京凝聚态物理国家研究中心）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过铁电/铁磁范德华异质结构中的界面DMI稳定手性自旋纹理，实现了拓扑霍尔效应及铁电和磁双稳态调控，产生四种可编程霍尔电阻状态。
AI 中文摘要
手性自旋纹理主要由Dzyaloshinskii-Moriya相互作用驱动，因其手性和拓扑稳定性，为下一代计算技术提供了巨大潜力。铁电/铁磁范德华异质结构尤其引人注目，因为它们可以结合界面反演对称性破缺和自旋轨道耦合来促进界面Dzyaloshinskii-Moriya相互作用，而可切换的铁电极化则提供了一个非易失性的调控旋钮。本研究探讨了少层Fe$_3$GeTe$_2$/α-In$_2$Se$_3$异质结构中的界面手性自旋纹理。在矫顽场略低于和略高于处识别出两组拓扑霍尔信号，且厚度相关的输运测量显示，随着Fe$_3$GeTe$_2$层厚度的增加，临界温度显著降低。低温磁力显微镜图像显示，在矫顽场附近存在两种具有相反磁衬度的磁泡，每种磁泡与不同的拓扑霍尔信号相关联。结合原子自旋动力学模拟和第一性原理计算，这些结果支持了界面DMI稳定的手性自旋纹理的形成。切换α-In$_2$Se$_3$层的铁电极化进一步实现了异常霍尔效应和拓扑霍尔效应的非易失性调制。由此产生的铁电和磁双稳态产生了四种可通过电场和磁场编程的不同的霍尔电阻状态。这些发现凸显了范德华界面在先进器件应用中的潜力。
英文摘要
Chiral spin textures, largely driven by the Dzyaloshinskii-Moriya interaction, offer significant potential for next-generation computing technologies due to their chirality and topological stability. Ferroelectric/ferromagnetic van der Waals heterostructures are particularly appealing because they can combine interfacial inversion-symmetry breaking and spin-orbit coupling to promote interfacial Dzyaloshinskii-Moriya interaction, while switchable ferroelectric polarization provides a nonvolatile tuning knob. This study investigates interfacial chiral spin textures in few-layer Fe$_3$GeTe$_2$/$α$-In$_2$Se$_3$ heterostructures. Two groups of topological Hall signals are identified just below and above the coercive field, and thickness-dependent transport reveals a notable reduction in critical temperature with increasing Fe$_3$GeTe$_2$ layer thickness. Low-temperature magnetic force microscopy images reveal two types of magnetic bubbles with opposite magnetic contrasts near the coercive field, each associated with distinct topological Hall signals. Together with atomistic spin-dynamics simulations and first-principles calculations, these results support the formation of interfacial DMI-stabilized chiral spin textures. Switching the ferroelectric polarization of the $α$-In$_2$Se$_3$ layer further enables nonvolatile modulation of both anomalous and topological Hall effects. The resulting ferroelectric and magnetic bistabilities generate four distinguishable Hall resistance states programmable by electric and magnetic fields. These findings highlight the potential of van der Waals interfaces for advanced device applications.
