This letter reports on the realization of logic circuits employing solution-processed networks of single-walled carbon nanotubes. We constructed basic logic gates (inverter, NAND and NOR) with n- and p-type field-effect transistors fabricated by solution-based chemical doping. Complementary metal-oxide-semiconductor inverters exhibited voltage gains of up to 20, which illustrates the great potential of carbon nanotube networks for printable flexible electronics.
Synergistic Effect of Multi-Walled Carbon Nanotubes and Ladder-Type Conjugated Polymers on the Performance of N-Type Organic Electrochemical Transistors
Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes
我们展示了解决方案可加工的大面积场效应晶体管（FET）从对齐阵列的碳纳米管（CNT）。市售的，悬浮在水溶液中的无表面活性剂的CNT使用交流介电泳技术在源极和漏极之间对准。在通过电击穿去除金属纳米管后，器件显示出p型行为，开关比高达~ 2X10^4。测得的场效应迁移率高达123 cm 2/Vs，这比典型的溶液处理的有机FET器件高三个数量级。
Solution processed polymers are at the core of organic electronics. Polyradicals (polymers in which each repeating unit contains an unpaired spin) are unique alternatives to their p-conjugated, semiconducting counterparts. Unique of polyradicals are tunable charge states localized at their repeating units, which enable electrically switchable charge transport regimes. Tremendous efforts were focused on polyradical memristors and batteries. Notwithstanding recent progress in doping, polyradical field-effect transistors (PR-FETs) have not been reported. Here, we show that vertical architectures,…
Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing production schemes further boosts the benefits offered by such technology, facilitating the implementation of cheap, conformable, bio-compatible electronic applications. The result shown in this work challenges the widespread assumption that such class of electronic devices is relegated to low-frequency operation, owing to the limited charge mobility of the …
p-type doping from the dielectric/semiconductor interface of a SnO2 thin film transistor (TFT) has been utilized to develop high carrier mobility balanced ambipolar oxide-transistor. To introduce this interfacial-doping, bottom-gate top-contact TFTs have been fabricated by using two different ion-conducting oxide dielectrics which contain trivalent atoms. These ion-conducting dielectrics are LilnO2 and LiGaO2 respectively, containing mobile Li+ ion. During SnO2 thin film fabrication on top of the ionic dielectric, those trivalent atoms allow p- doping to the interfacial SnO2 layer to introduce…
The controlled introduction of covalent sp$^{3}$ defects into semiconducting single-walled carbon nanotubes (SWCNTs) gives rise to exciton localization and red-shifted near-infrared luminescence. The single-photon emission characteristics of these functionalized SWCNTs make them interesting candidates for electrically driven quantum light sources. However, the impact of sp$^{3}$ defects on the carrier dynamics and charge transport in carbon nanotubes remains an open question. Here, we use ultrafast, time-resolved optical-pump terahertz-probe spectroscopy as a direct and quantitative technique …
Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors
In/Zn氧化物与各种X原子的合金化稳定了IXZO结构，但在化合物中产生电子陷阱，降低了电子迁移率。为了评估后者是否与X元素的氧亲和力或离子半径有关，通过溶胶-凝胶过程合成了几个IXZO样品，其中含有大量（14）X元素。IXZO通过XPS、SIMS、DRX和UV光谱表征，并用于制造薄膜晶体管。从TFT电学特性和低频噪声中提取的沟道迁移率和界面缺陷密度NST呈增加趋势，迁移率和NST的值呈指数关系。在In-Ga-Zn-O中获得了最高的迁移率（8.5 cm 2/Vs），并且对于Sb和Sn掺杂的IXZO获得了稍低的值，NST为约2 E12 cm 2/eV，接近于In-Zn-O参考TFT的NST。这是由于Ga、Sb和Sn的电负性高于Zn和In，它们的离子半径值接近In和Zn的离子半径值。因此，Ga，Sb和Sn在溶胶-凝胶过程中诱导的In-O和Zn-O序列的扰动较弱，而X元素具有较低的电负性和不同的离子半径。具有X = Ca、Al、Ni和Cu的TFT表现出最低的迁移率和NST > 1 E13 cm 2/eV，这很可能是由于金属或氧化物簇的形成。
DNA Functionalization of Carbon Nanotubes for Ultra-Thin Atomic Layer Deposition of High k Dielectrics for Nanotube Transistors with 60mV/decade Switching
Trions are charged excitons that form upon optical or electrical excitation of low-dimensional semiconductors in the presence of charge carriers (holes or electrons). Trion emission from semiconducting single-walled carbon nanotubes (SWCNTs) occurs in the near-infrared and at lower energies compared to the respective exciton. It can be used as an indicator for the presence of excess charge carriers in SWCNT samples and devices. Both excitons and trions are highly sensitive to the surrounding dielectric medium of the nanotubes, having an impact on their application in optoelectronic devices. He…
Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances in selective growth, purification, and sorting of semiconducting and even monochiral carbon nanotubes have enabled field-effect transistors with high carrier mobilities and on/off current ratios that were impossible a few years ago. They have also allowed researchers to examine the microscopic interplay of parameters such as nanotube length, density, diamet…
Fabrication techniques such as laser patterning offer excellent potential for low cost and large area device fabrication. Conductive polymers can be used to replace expensive metallic inks such as silver and gold nanoparticles for printing technology. Electrical conductivity of the polymers can be improved by blending with carbon nanotubes. In this work, formulations of acid functionalised multiwall carbon nanotubes (f-MWCNT) and poly (ethylenedioxythiophene) [PEDOT]: polystyrene sulphonate [PSS] were processed, and thin films were prepared on plastic substrates. Conductivity of PEDOT: PSS inc…
Solution-processed, large-area, and flexible electronics largely relies on the excellent electronic properties of sp$^2$-hybridized carbon molecules, either in the form of $π$-conjugated small molecules and polymers or graphene and carbon nanotubes. Carbon with sp-hybridization, the foundation of the elusive allotrope carbyne, offers vast opportunities for functionalized molecules in the form of linear carbon atomic wires (CAWs), with intriguing and even superior predicted electronic properties. While CAWs represent a vibrant field of research, to date, they have only been applied sparingly to…
Solution-processed networks of semiconducting, single-walled carbon nanotubes (SWCNTs) have attracted considerable attention as materials for next-generation electronic devices and circuits. However, the impact of the SWCNT network composition on charge transport on a microscopic level remains an open and complex question. Here, we use charge-modulated absorption and photoluminescence spectroscopy to probe exclusively the mobile charge carriers in monochiral (6,5) and mixed SWCNT network field-effect transistors. Ground state bleaching and charge-induced trion absorption features, as well as e…
The controlled covalent functionalization of semiconducting single-walled carbon nanotubes (SWCNTs) with luminescent sp$^{3}$ defects leads to additional narrow and tunable photoluminescence features in the near-infrared and even enables single-photon emission at room temperature, thus strongly expanding their application potential. However, the successful integration of sp$^{3}$-functionalized SWCNTs in optoelectronic devices with efficient defect state electroluminescence not only requires control over their emission properties but also a detailed understanding of the impact of functionaliza…
Despite many theoretical schemes, the direct experimental observation of supramolecular control on band gap opening in single-walled carbon nanotubes (SWNT) is still lacking. We report experimental and theoretical demonstration of metal to semiconductor transition with precisely measured large band gap in SWNTs due to the wrapping of mannose functionalized poly (propyl ether imine) dendrimer (DM) molecules. Semiconductor behaviour of SWNT-DM complex is comprehensively established with a band gap value of ~ 0.45 eV measured using scanning tunnelling spectroscopy (STS), ionic liquid top gated fi…
Single-walled carbon nanotubes have been a candidate for outperforming silicon in ultrascaled transistors, but the realization of nanotube-based integrated circuits requires dense arrays of purely semiconducting species. Control over kinetics and thermodynamics in tube-catalyst systems plays a key role for direct growth of such nanotube arrays, and further progress requires the comprehensive understanding of seemingly contradictory reports on the growth kinetics. Here, we propose a universal kinetic model and provide its quantitative verification by ethanol-based isotope labeling experiments. …
