半导体碳纳米管网络中的电荷输运
Charge transport in semiconducting carbon nanotube networks
摘要：
半导体单壁碳纳米管网络中有效和受控的电荷传输是其在电子器件中应用的基础，特别是在场效应晶体管和热电器件中。半导体甚至单手性碳纳米管的选择性生长、纯化和分选方面的最新进展使场效应晶体管具有高载流子迁移率和开/关电流比，这在几年前是不可能的。它们还使研究人员能够检查纳米管长度、密度、直径分布、载流子密度、有意和无意缺陷、介电环境等参数的微观相互作用，以及它们对宏观电荷输运性质的影响。这篇评论讨论了各种模型，被认为是在纳米管网络和实验方法来表征和调查运输超越简单的电导率或晶体管测量的电荷传输。静态和动态吸收、光致发光和电致发光光谱以及扫描探针技术（例如，导电原子力显微镜，开尔文探针力显微镜），以及他们在给定纳米管网络中载流子分布和由此产生的电流路径方面的独特见解将被介绍。最后，建议进一步优化纳米管网络设备和剩余的挑战列表。
英文摘要：
Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances in selective growth, purification, and sorting of semiconducting and even monochiral carbon nanotubes have enabled field-effect transistors with high carrier mobilities and on/off current ratios that were impossible a few years ago. They have also allowed researchers to examine the microscopic interplay of parameters such as nanotube length, density, diameter distribution, carrier density, intentional and unintentional defects, dielectric environment, etc., and their impact on the macroscopic charge transport properties in a rational and reproducible manner. This review discusses various models that are considered for charge transport in nanotube networks and the experimental methods to characterize and investigate transport beyond simple conductivity or transistor measurements. Static and dynamic absorption, photoluminescence and electroluminescence spectroscopy, as well as scanning probe techniques (e.g., conductive atomic force microscopy, Kelvin probe force microscopy), and their unique insights in the distribution of charge carriers in a given nanotube network and the resulting current pathways will be introduced. Finally, recommendations for further optimization of nanotube network devices and a list of remaining challenges are provided.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
