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arXiv 0801.3152cond-mat.mtrl-sci
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GdN的电子结构和精确交换的影响

Electronic structure of GdN, and the influence of exact exchange

K. Doll

摘要:

在局域密度近似下,在Hartree-Fock水平和杂化泛函B3 LYP水平上对GdN体相进行了研究.使用本地基集形式主义,如在本CRYSTAL 06版本中实现的。它表明,该代码是技术上能够处理这个系统的4f电子明确,即核心。局域密度近似下的能带结构与早期的计算结果吻合得很好,并且被认为是半金属的。Hartree-Fock能带结构是绝缘的,具有大的带隙。有趣的是,在B3 LYP水平上发现了三个解。其中最低层对于多数自旋来说是绝缘的,而少数自旋的费米表面仅由点组成,导致费米能级周围的态密度非常低。

英文摘要:

GdN bulk is studied with the local density approximation, on the Hartree-Fock level, and on the level of the hybrid functional B3LYP. A local basis set formalism is used, as implemented in the present CRYSTAL06 release. It is demonstrated that the code is technically capable of treating this system with its 4f electrons explicitly, i.e. out of the core. The band structure at the level of the local density approximation is in good agreement with earlier calculations and is found to be half-metallic. The Hartree-Fock band structure is insulating with a large gap. Interestingly, three solutions were found at the B3LYP level. The lowest of them is insulating for majority spin, and the Fermi surface for minority spin consists only of points, resulting in a very low density of states around the Fermi level.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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