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arXiv 0801.0880cond-mat.mes-hallcond-mat.mtrl-sci
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一种有效的纳米结构全能带结构量子输运计算方法

An Efficient Method for Quantum Transport Calculations in Nanostructures using Full Band Structure

D. Basu, M. J. Gilbert, L. F. Register, S. K. Banerjee

摘要:

半导体器件的缩放已经达到了一个阶段,在这个阶段,考虑这些超小型器件中传输的量子力学方面已经变得绝对必要。在这些模拟中,经常排除严格的能带结构处理,因为它构成了巨大的计算挑战。本文提出了一种有效的计算全能带结构纳米线晶体管中全三维耦合量子输运的方法。我们已经通过模拟p型Ge纳米线晶体管中的空穴传输显示了该方法的功率。空穴能带结构从我们最近的邻居sp 3s * 紧束缚哈密顿量同意以及定性与更复杂和更精确的计算,考虑第三最近的邻居。计算的I-V结果表明,如何移动的能带,由于限制可以准确地捕捉到只有在一个完整的带全量子模拟。

英文摘要:

Scaling of semiconductor devices has reached a stage where it has become absolutely imperative to consider the quantum mechanical aspects of transport in these ultra small devices. In these simulations, often one excludes a rigorous band structure treatment, since it poses a huge computational challenge. We have proposed here an efficient method for calculating full three-dimensionally coupled quantum transport in nanowire transistors including full band structure. We have shown the power of the method by simulating hole transport in p-type Ge nanowire transistors. The hole band structure obtained from our nearest neighbor sp3s* tight binding Hamiltonian agrees well qualitatively with more complex and accurate calculations that take third nearest neighbors into account. The calculated I-V results show how shifting of the energy bands due to confinement can be accurately captured only in a full band full quantum simulation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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