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arXiv 0710.4841cond-mat.mtrl-sci
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Ge(001)表面c(4 × 2)重构的电子结构

Electronic structure of the c(4 x 2) reconstructed Ge(001) surface

Udo Schwingenschloegl, Cosima Schuster

摘要:

我们采用基于密度泛函理论和广义梯度近似的能带结构计算方法研究了c(4 x 2)重构Ge(001)表面的电子结构.特别是,我们考虑到表面重建的细节,以及放松的晶体结构。的表面电子状态的识别和本地的状态密度进行比较,最近的数据从扫描隧道光谱。我们获得了几乎完美的协议之间的理论和实验的占领和未占领的状态,这使我们能够澄清的实验数据的解释。

英文摘要:

We investigate the electronic structure of the c(4 x 2) reconstructed Ge(001) surface using band structure calculations based on density functional theory and the generalized gradient approximation. In particular, we take into account the details of surface reconstruction by means of well relaxed crystal structures. The surface electronic states are identified and the local density of states is compared to recent data from scanning tunneling spectroscopy. We obtain almost perfect agreement between theory and experiment for both the occupied and unoccupied states, which allows us to clarify the interpretation of the experimental data.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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