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arXiv 0709.3718cond-mat.mes-hallcond-mat.str-el
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一维纳米粒子阵列输运中的电子关联和无序

Electronic correlations and disorder in transport through one-dimensional nanoparticle arrays

E. Bascones, V. Estevez, J. A. Trinidad, A. H. MacDonald

摘要:

我们分析和澄清的一维金属纳米粒子阵列的输运性质的电荷之间的相互作用限制在同一导体中放置的电荷。我们研究了阈值电压、I-V曲线和通过阵列的电势降以及它们与阵列参数的关系,包括电荷和电阻无序的影响。我们发现,非常接近阈值的电流线性依赖于电压的斜率独立于阵列的大小。在中间偏置电压下,观察到库仑阶梯,我们发现通过阵列的平均电位降随位置振荡。在较高电压下,I-V曲线是线性的,但具有有限的偏移电压。我们表明,斜率是由串联电阻的倒数给出的,并估计达到这种线性状态的电压。我们还计算了失调电压,并将其与通过阵列的电位降相关联。

英文摘要:

We analyze and clarify the transport properties of a one-dimensional metallic nanoparticle array with interaction between charges restricted to charges placed in the same conductor. We study the threshold voltage, the I-V curves and the potential drop through the array and their dependence on the array parameters including the effect of charge and resistance disorder. We show that very close to threshold the current depends linearly on voltage with a slope independent on the array size. At intermediate bias voltages, for which a Coulomb staircase is observed we find that the average potential drop through the array oscillates with position. At higher voltages I-V curves are linear but have a finite offset voltage. We show that the slope is given by the inverse of the resistances added in series and estimate the voltage at which this linear regime is reached. We also calculate the offset voltage and relate it to the potential drop through the array.

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