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arXiv 1012.3887cond-mat.mes-hall
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纳米颗粒阵列磁电阻效应的鲁棒性

Robustness of the magnetoresistance of nanoparticle arrays

V. Estevez, E. Bascones

摘要:

最近的研究发现,纳米颗粒阵列中的自旋积累和库仑阻塞之间的相互作用导致峰值I-V和隧穿磁电阻(TMR)曲线以及巨大的TMR值。我们分析了这些效应是如何受到电极的极化不对称性,阵列的维数,温度,电阻或电荷无序和长程相互作用的影响。我们发现,TMR的幅度和电压依赖性不改变与阵列的维数或结电阻无序的存在。电极中的不同极化修改I-V和TMR曲线中的峰形,但不修改它们的数量级。增加相互作用的温度或长度在一定程度上减小了峰的大小,这是由于长程相互作用在较长阵列中较小而导致的减小。应避免电荷无序以观察大的TMR值。

英文摘要:

Recent work has found that the interplay between spin accumulation and Coulomb blockade in nanoparticle arrays results in peaky I-V and tunneling magnetoresistance (TMR) curves and in huge values of the TMR. We analyze how these effects are influenced by a polarization asymmetry of the electrodes, the dimensionality of the array, the temperature, resistance or charge disorder and long-range interactions. We show that the magnitude and voltage dependence of the TMR does not change with the dimensionality of the array or the presence of junction resistance disorder. A different polarization in the electrodes modifies the peak shape in the I-V and TMR curves but not their order of magnitude. Increasing the temperature or length of the interaction reduces to some extent the size of the peaks, being the reduction due to long-range interactions smaller in longer arrays. Charge disorder should be avoided to observe large TMR values.

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