缺镁对HPCVD生长的MgB2薄膜超导电性的影响
Influence of Mg Deficiency on the Superconductivity in MgB2 Thin Films Grown by using HPCVD
摘要：
采用混合物理化学气相沉积法制备了MgB2薄膜，研究了Mg元素的缺乏对薄膜真空退火的影响。在本研究中使用的高品质的MgB2薄膜生长在c切Al2O3衬底上具有不同的超导转变温度（Tc）为40.2和41 K。当退火温度从200 ℃升高到800 ℃时，MgB_2薄膜中Mg的含量系统地降低，但Tc在0.12K内没有变化，直到退火温度达到700 ℃。而在800 ℃退火30 min的MgB2薄膜，没有观察到超导性，电阻率随温度的变化表现为半导性。我们还发现，随着退火温度的升高，剩余电阻率比下降。
英文摘要：
The effects of Mg deficiency in MgB2 films grown by using hybrid physical-chemical vapor deposition were investigated after vacuum annealing at various temperatures. High-quality MgB2 films grown on c-cut Al2O3 substrates with different superconducting transition temperatures (Tc) of 40.2 and 41 K were used in this study. As the annealing temperature was increased from 200 to 800 C, the Mg contents in the MgB2 films systemically decreased, but the Tc's did not change, within 0.12 K, until the annealing temperature reached 700 C. For MgB2 films annealed at 800 C for 30 min, however, no superconductivity was observed, and the temperature dependence of the resistivity showed a semiconducting behavior. We also found that the residual resistivity ratio decreased with increasing annealing temperature.
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